TRANSISTOR SST 250 Search Results

Contextual Info: Die no. D-25 NPN Darlington transistor These are epitaxial planar NPN silicon Darlington transistors. SST3 Features • • Dimensions Units : mm ° ;95~ o:t available in a SST3 (SST, SOT-23) package, see page 300 a 0 . 4 5 ± 0 .1 collector-to-emitter breakdown

Contextual Info: Die no. A-32 PNP small signal transistor Features Dimensions Units : mm available in an SST3 (SST, SOT-23) package, see page 300 SST3 collector-to-emitter breakdown voltage, BVCEO = 40 V (min) at lc = 1.0 mA 0 .4 5 ± 0 .1 excellent gain linearity from 100 (iA to

2N5326

Abstract: OTC2220 OTC2420 SVT60-5 SVT80-5
Contextual Info: OPTEK TE CH N O L O G Y INC 4flE D • bV T& Sa D □□G13ût. SST ■ OTK Product Bulletin OTC2420 August 1990 High Speed NPN Switching Transistor Die Type OTC242Q 80V, 5A Applications • Low Voltage Inverters • Pulse Amplifiers • Base Drive Circuits

0x8102

Abstract: 2N3904 2N3906 PNP switching transistor 2N3906
Contextual Info: aSC7521A LOW-VOLTAGE 1-WIRE DIGITAL TEMPERATURE SENSOR PRODUCT SPECIFICATION Pin Configuration Product Description The aSC7521A is a high-precision CMOS temperature sensor and voltage monitor with Simple Serial Transport SST compatible serial digital interface, intended for use in PC

ADT7484A

Abstract: ADT7486A T7484A ADT7486AARMZ-RL footprint wide SOIC8 SST
Contextual Info: ADT7484A/ADT7486A Digital Temperature Sensor with SST Interface The ADT7484A/ADT7486A are simple digital temperature sensors for use in PC applications with a Simple Serial Transport SST interface. These devices can monitor their own temperature as well as

physical packages of a 2N3904 transistor

Abstract: 0x8102 0x8103 0X48 2N3904 MSOP-10 cmd 1008 2S 2N3904 GetVolt12V marking ayWW SOT23
Contextual Info: aSC7531A / aSC7531B LOW-VOLTAGE 1-WIRE DIGITAL TEMPERATURE SENSOR AND VOLTAGE MONITOR PRODUCT SPECIFICATION Pin Configuration Product Description The aSC7531 is a high-precision CMOS temperature sensor and voltage monitor with Simple Serial Transport SST

Contextual Info: W83772G Winbond H/W Monitoring IC Date: 04/27/2006 Revision: 1.0 W83772G W83772G Data Sheet Revision History PAGES DATES VERSION VERSION ON WEB n.a. 07/26/05 0.1 NA 2 08/10/05 0.2 For Winbond internal use only 3 08/25/05 0.31 For Winbond internal use only

TDA16850

Abstract: tda 1170 ic OPTO tl 431 A928 TDA 1030 pin diagram of ic 2732
Contextual Info: TDA 16850 Preliminary Data SMPS Controller for CRT Monitors 1 Overview 1.1 Features – Controller for Flyback Topology – Current mode PWM with shunt resistor and spike blanking – Leading edge triggered pulse width modulation – Fast, soft switching totem pole gate drive 1 A

MT591

Contextual Info: F=l SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR I ISSUE 3- OCTOBER 1995 FEATURES * Low equivalent on-resistance; RcEl~al 210mQ at 1A E c COMPLEMENTARY B FM MT591 TYPE - PARTMARKING 491 DETAIL F ABSOLUTE MAXIMUM SOT23 RATINGS. k Collector-Base —. Voltage

TDA16850-2

Abstract: 2731 OPTO
Contextual Info: Datasheet, V2.0, 1 April 2001 PWM-FF IC TDA16850-2 Free running and synchronized Controller with integrated 650V Power Management & Supply N e v e r s t o p t h i n k i n g . TDA16850-2 Revision History: 2001-04-01 Datasheet Previous Version: Page Subjects major changes since last revision

Contextual Info: TRANSISTOR MODULE SQP400AA120 S Q D 4 0 0 A A 1 2 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for

step down transformer 240 v to 15 v datasheet

Abstract: triangle wave application note HA16116 HA16116FP chopper transformer HRP24 Q 371 Transistor HA16121FP HA17451AFP HA17451AP
Contextual Info: HA16116FP/HA16121FP Switching Regulator for Chopper Type DC/DC Converter Description HA16116FP and HA16121FP are dual-channel PWM switching regulator controller ICs for use in choppertype DC/DC converters. This IC series incorporates totem pole gate drive circuits to allow direct driving of a power MOS FET. The

Hitachi DSA00279

Contextual Info: HA16116FP/HA16121FP Switching Regulator for Chopper Type DC/DC Converter ADE-204-019 Z 1st. Edition March 1993 Description HA16116FP and HA16121FP are dual-channel PWM switching regulator controller ICs for use in chopper-type DC/DC converters. This IC series incorporates totem pole gate drive circuits to allow direct driving of a power MOS FET. The

D1477

Abstract: 2SJ184 2SK1398 transistor G25
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1398 N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING ★ ORDERING INFORMATION DESCRIPTION The 2SK1398 is N-channel MOS Field Effect Transistor designed for a high-speed switching device in digital circuits. The 2SK1398 is driven by a 2.5-V power source, it is

equivalent transistor TT 3034

Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718
Contextual Info: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages

cc1017

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50DY-24 MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-24 • lc Collector c u rre n t. 50A • V cex • Hfe Collector-em itter vo lta g e . 1200V DC current g a in . 75

BUV48T

Abstract: transistor WW 179 c10A TRANSISTOR transistor bf 179 TCA 321 12A3 D-07 T0126 SOT-23 marking p03 marking va transistors
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • fi'iSOO'îh QDD^SST BUV 48 T miiFMIMIM electronic Creative'ftchnotog*» Silicon NPN Power Transistors Tr *’ 3 3 " i 5 Applications: Switching mode power supply, inverters, motor control and relay driver Features: • In triple diffusion technique

FMMT593

Contextual Info: SOT23 PNP SILICON PLANAR FMMT593 HIGH VOLTAGE TRANSISTOR ISSUE 3- NOVEMBER 1995 I I I COMPLEMENTARY TYPE FM MT493 PARTMARKING DETAIL -593 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Emitter-Base ——— Peak Pulse ‘C Voltage –-— v EBO ‘5 ICM

transistor A4t 85

Abstract: 3b5 transistor transistor A4t 45 transistor A4t
Contextual Info: b5E D m VllDÔSb DQbSTBl 1T4 • PHIN PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile

2SK1398

Abstract: D1477 2SJ184
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: mn S IL IC O N P H O T O D A R L IN G T O N “ P IG T A IL ” 61010 TYPE G S 3030 OPTOELECTRO NIC PRODUCTS DIVISION G E N E R A L D E S C R IP T IO N MINIATURE PHOTODARLINGTON WITH NARROW ANGULAR RESPONSE GLASS/METAL WELDED HERMETIC PACKAGED Mii 61010 is an N-P-N Planar Silicon Photodarlington Transistor in a tensed coaxial package

ITS 31422

Abstract: 2044B 2SC4523
Contextual Info: Ordering num ber: EN 3142A N0.3142A 2SC4523 NPN Epitaxial Planar Silicon Transistor i High-Speed Switching Applications Features . Adoption ofFBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching speed

potentiometer 1k ohm

Abstract: 7J23 ansi y32 TRANSISTOR n 522
Contextual Info: Preliminary Product Description SP-2055 Stanford Microdevices offers a high-performance LDMOS transistor designed for base station applications in the 1800 MHz to 2200 MHz frequency range. This novel Peak LDMOS has been optimized for high peak to average power in a low cost, power flanged package. Ideal for

potentiometer 1k ohm

Abstract: potentiometer 1k ansi y32.2 ansi y32 TORX1 TRANSISTOR n 522 200 ohm resistor
Contextual Info: Preliminary Product Description SP-2055P Stanford Microdevices offers a high-performance LDMOS transistor designed for base station applications in the 1800 MHz to 2200 MHz frequency range. This novel Peak LDMOS has been optimized for high peak to average