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    TRANSISTOR SMD T4 Search Results

    TRANSISTOR SMD T4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SMD T4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PBSS4350D

    Abstract: PBSS5350D
    Text: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 5 — 23 March 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5350D OT457 SC-74) PBSS4350D AEC-Q101 PBSS4350D PBSS5350D

    Untitled

    Abstract: No abstract text available
    Text: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 6 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5350D OT457 SC-74) PBSS4350D AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: SO T4 57 PBSS5350D 50 V, 3 A PNP low VCEsat BISS transistor Rev. 6 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS5350D OT457 SC-74) PBSS4350D AEC-Q101

    PMN42XPEA

    Abstract: No abstract text available
    Text: SO T4 57 PMN42XPEA 20 V, P-channel Trench MOSFET 21 March 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMN42XPEA OT457 SC-74) AEC-Q101 PMN42XPEA

    Untitled

    Abstract: No abstract text available
    Text: SO T4 16 NX3020NAKT 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF NX3020NAKT OT416 SC-75)

    Untitled

    Abstract: No abstract text available
    Text: SO T4 57 PMN27XPEA 20 V, single P-channel Trench MOSFET 19 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMN27XPEA OT457 SC-74) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: SO T4 57 PMN40UPEA 20 V, single P-channel Trench MOSFET 19 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMN40UPEA OT457 SC-74) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: SO T4 57 PMN70XPEA 20 V, single P-channel Trench MOSFET 19 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMN70XPEA OT457 SC-74) AEC-Q101

    BCX18R

    Abstract: transistor SMD t4 SMD TRANSISTOR MARKING 28 TRANSISTOR T4 BCX17R
    Text: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR BCX17R BCX18R SOT-23 Formed SMD Package MARKING BCX17R = T4 BCX18R = T5 ABSOLUTE MAXIMUM RATINGS Ta = 25ºC unless specified otherwise


    Original     		PDF BCX17R BCX18R OT-23 C-120 BCX17R Rev160103E BCX18R transistor SMD t4 SMD TRANSISTOR MARKING 28 TRANSISTOR T4

    nxp 544

    Abstract: FET marking codes
    Text: SO T4 16 PMR280UN N-channel TrenchMOS ultra low level FET Rev. 2 — 3 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.


    Original     		PDF PMR280UN nxp 544 FET marking codes

    FET marking codes

    Abstract: No abstract text available
    Text: SO T4 16 PMR400UN N-channel TrenchMOS ultra low level FET Rev. 2 — 2 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.


    Original     		PDF PMR400UN FET marking codes

    transistor smd code marking nc

    Abstract: No abstract text available
    Text: SO T4 57 PMN27UP 20 V, 5.7 A P-channel Trench MOSFET Rev. 1 — 13 July 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMN27UP OT457 SC-74) transistor smd code marking nc

    Untitled

    Abstract: No abstract text available
    Text: SO T4 57 PMN35EN 30 V, 5.1 A N-channel Trench MOSFET Rev. 1 — 20 July 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMN35EN OT457 SC-74)

    Untitled

    Abstract: No abstract text available
    Text: SO T4 16 BSS84AKT 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF BSS84AKT OT416 SC-75) AEC-Q101 771-BSS84AKT115 BSS84AKT

    Untitled

    Abstract: No abstract text available
    Text: SO T4 16 NX3008NBKT 30 V, 350 mA N-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF NX3008NBKT OT416 SC-75) AEC-Q101

    5s103

    Abstract: No abstract text available
    Text: SO T4 57 PMN80XP 20 V, single P-channel Trench MOSFET Rev. 1 — 8 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMN80XP OT457 SC-74) 5s103

    SC-75

    Abstract: No abstract text available
    Text: SO T4 16 BSS84AKT 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF BSS84AKT OT416 SC-75) AEC-Q101 SC-75

    smd code marking ID

    Abstract: NXP SMD DIODE MARKING CODE T4 NX3008PBKT
    Text: SO T4 16 NX3008PBKT 30 V, 200 mA P-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF NX3008PBKT OT416 SC-75) AEC-Q101 smd code marking ID NXP SMD DIODE MARKING CODE T4 NX3008PBKT

    Untitled

    Abstract: No abstract text available
    Text: SO T4 16 PMR670UPE 20 V, 480 mA P-channel Trench MOSFET Rev. 1 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMR670UPE OT416 SC-75) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: SO T4 16 BSS84AKT 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF BSS84AKT OT416 SC-75) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: SO T4 57 PMN22XN 30 V, single N-channel Trench MOSFET Rev. 1 — 19 January 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMN22XN OT457 SC-74)

    zy smd transistor

    Abstract: transistor smd zy transistor SMD marking ZY NXP SMD mosfet MARKING CODE pmn34up TRANSISTOR SMD MARKING CODE zy SMD mosfet MARKING code T
    Text: SO T4 57 PMN34UP 20 V, 5 A P-channel Trench MOSFET Rev. 1 — 9 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMN34UP OT457 SC-74) zy smd transistor transistor smd zy transistor SMD marking ZY NXP SMD mosfet MARKING CODE pmn34up TRANSISTOR SMD MARKING CODE zy SMD mosfet MARKING code T

    Untitled

    Abstract: No abstract text available
    Text: • bbSBIBl 002b0D3 07M H A P X N AMER PHI LIPS/DISCRETE PZT3904 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD envelope SOT-223 . Designed primarily for high-speed, saturated switching applications in industrial service.


    OCR Scan     		PDF 002b0D3 PZT3904 OT-223)

    1N916

    Abstract: PZT3904 smd transistor 3t
    Text: • bbSBTBl 00Sb003 D7M H A P X N AMER PHILIPS/DISCRETE P ZT 3904 b?E T> SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a microminiature SMD envelope SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service.


    OCR Scan     		PDF 002b003 PZT3904 OT-223) 1N916^ 1N916( 7Z74968 1N916 PZT3904 smd transistor 3t