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    PMR280UN Search Results

    PMR280UN Datasheets (5)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PMR280UN
    NXP Semiconductors PMR280UN - N-channel uTrenchmos ultra low level FET - Configuration: Single N-channel ; ID DC: 0.98 A; Qgd (typ): 0.18 nC; RDS(on): 340@4.5V430@2.5V660@1.8V mOhm; VDSmax: 20 V Original PDF 219.65KB 13
    PMR280UN
    Philips Semiconductors N-channel mTrenchMOS ultra low level FET Original PDF 81.39KB 12
    PMR280UN,115
    NXP Semiconductors N-channel uTrenchmos ultra low level FET - Configuration: Single N-channel ; ID DC: 0.98 A; Qgd (typ): 0.18 nC; RDS(on): 340@4.5V430@2.5V660@1.8V mOhm; VDSmax: 20 V; Package: SOT416 (SC-75); Container: Tape reel smd Original PDF 81.36KB 12
    PMR280UN,115
    NXP Semiconductors PMR280 - TRANSISTOR 980 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-75, 3 PIN, FET General Purpose Small Signal Original PDF 219.64KB 13
    PMR280UNT/R
    NXP Semiconductors N-channel uTrenchmos ultra low level FET - Configuration: Single N-channel ; ID DC: 0.98 A; Qgd (typ): 0.18 nC; RDS(on): 340@4.5V430@2.5V660@1.8V mOhm; VDSmax: 20 V Original PDF 81.36KB 12
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    PMR280UN Price and Stock

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    Nexperia PMR280UN

    Small Signal Field-Effect Transistor, 0.98A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian PMR280UN 7,885
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    NXP Semiconductors PMR280UN,115

    Small Signal Field-Effect Transistor, 0.98A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian PMR280UN,115 6,805
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    PMR280UN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PMR280UN

    Abstract: SC-75
    Contextual Info: PMR280UN N-channel µTrenchMOS ultra low level FET Rev. 01 — 5 March 2004 M3D173 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounted package


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    pmr280unm3d173ot416sc-75 PDF

    nxp 544

    Abstract: FET marking codes
    Contextual Info: SO T4 16 PMR280UN N-channel TrenchMOS ultra low level FET Rev. 2 — 3 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.


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    pmr280unnxp 544fet marking codes PDF

    NX3008NBKMB

    Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS
    Contextual Info: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


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    ot223dfn1006b-3aec-q101q3/2012+10nx3008nbkmbbss138bkbss84akspmv48xpbsh2012n7002pwnx2301pmpb27xppmf170xp2n7002ps PDF

    tea1719

    Abstract: PH1930 nds 3 video guard smart card OPTOCOUPLER SMPS for HDD ph1930al PH2530AL ip4223 SMD 8A TRANSISTOR 702 transistor smd code PH6030AL
    Contextual Info: Application Guide Notebook Computing Introduction Your partner for notebook computing Designing notebooks isn’t getting any easier. The footprint continues to shrink, and consumers continue to demand more features, faster speeds, on our decades-long leadership in high-performance mixed-signal solutions,


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    tea1719ph1930nds 3 video guard smart cardoptocoupler smps for hdd+6ph1930alph2530alip4223smd 8a transistor702 transistor smd codeph6030al PDF

    prtr5v0u6s

    Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
    Contextual Info: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years


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    2002/95/ecpmbta42pmeg3005elpmeg6010ep+16pmr780snptvs12vs1urpzu13ypmbta42dspmeg3005etpmeg6010erprtr5v0u6scsp1040tssop20 footprintip4065cx11smd transistor gy sot89ip4065cx11/lfbv 9y transistor smdip4058cx8/lfip4280cz10smd transistor gy PDF

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


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    dfn1006d-2od882ddfn1010d-3ot1215+16dfn2020md-6ot1220dfn1608d-2od1608dsn0603od962circuit diagram wireless spy camerapdtb123yip4303cx4dual cc baw623267 tsop6pcmf2dfn1bst60pumd4pdtb123epdta143 PDF

    PHD78NQ

    Abstract: BUK9507-30B BUK7608-40B PHB27NQ10T PHP18NQ10T ph43 PHD66NQ03LT BUK9575-100A PHP45NQ10TA si2302ds
    Contextual Info: Power MOSFET Selection Guide 2009 Smaller, faster, cooler Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4


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    PMR280UN

    Abstract: PMR370XN PMR290XN PMR400UN PMR780SN SC75 SC-75 SC89
    Contextual Info: 20 V, 30 V and 60 V N-channel MOSFETs in SOT416 SC-75 A new dimension in power Leading the way in miniaturization and Trench technology, NXP’s innovative TrenchMOS portfolio delivers excellent performance from the smallest devices. As consumers demand smaller, efficient


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    ot416sc-75pmr280unpmr370xn+5pmr290xnpmr400unpmr780snsc75sc89 PDF

    PSMN015-60PS

    Abstract: BUK9507-30B Power MOSFET Selection Guide BSS123 NXP BSH103 BSS84 / BSH201 2N7002CK BSH108 BUK7535-55A PMN38EN
    Contextual Info: Power MOSFET Selection Guide 2010 Smaller, faster, cooler 2 Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4


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    TEA1620

    Abstract: BUK2114 IRF540 n-channel MOSFET BATTERY CHARGER buk2914-50syts TEA1507 BUK2114-50SYTS TEA1552 PHD78NQ bu4508dx BU2527
    Contextual Info: Semiconductors Power Management Selection Guide 2005 page 1 Semiconductors Welcome to Philips’ Power Management selection guide 2005. Inside you will discover just how easily you can tap into the design freedom offered by our Power Management portfolio. Our advanced power technologies and products cover virtually all aspects of


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    tea1620buk2114irf540 n-channel mosfet battery chargerbuk2914-50syts+6tea1507buk2114-50sytstea1552phd78nqbu4508dxbu2527 PDF

    BUK2114

    Abstract: BUK2114-50SYTS saa7117 SAA7136E MPSA92 168 saa7136 buk2914-50syts TDA8920BTH bu4508dx KMZ52
    Contextual Info: Index Type number Page number 1N4148 34 1N4531 34 1N47xxA series 44 1PS10SB62 32 1PS10SB63 32 1PS10SB82 32 1PS181 36 1PS184 36 1PS193 34 1PS226 36 1PS59SB10 28 1PS59SB14 28 1PS59SB15 28 1PS59SB16 28 1PS59SB20 30 1PS59SB21 28 1PS66SB17 32 1PS66SB62 32 1PS66SB63


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    BUT11ApX equivalent

    Abstract: PH4030AL philips uhp lamp driver power supply circuit diagram using ic tea1530 BT136 testing power management selection guide BU4508DX equivalent 2n7002 12w nxp BSN304 equivalent bu2508af equivalent
    Contextual Info: Power Management selection guide 2008 Leading the power efficient connected world Table of contents Power MOSFETs 4 Automotive MOSFETs 16 Power Bipolar Transistors 20 Complex Discretes 22 Small-signal bipolar transistors 28 SCR's Triacs and Trigger Devices


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    but11apx equivalentph4030alphilips uhp lamp driverpower supply circuit diagram using ic tea1530+6bt136 testingpower management selection guidebu4508dx equivalent2n7002 12w nxpbsn304 equivalentbu2508af equivalent PDF

    clk sot363

    Abstract: Philips 370 PMR280UN PMR370XN PMR290XN PMR400UN PMR780SN SC75 SC-75 SC89
    Contextual Info: µTrenchMOS 20 V, 30 V and 60 V N-channel A new dimension in power MOSFETs in SOT416 SC-75 Leading the way in miniaturization and Trench technology, Philips innovative µTrenchMOS portfolio delivers excellent performance from the smallest devices. As consumers


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    ot416sc-75clk sot363philips 370+7pmr280unpmr370xnpmr290xnpmr400unpmr780snsc75sc89 PDF

    BUK2114

    Abstract: IRF540 n-channel MOSFET BATTERY CHARGER SMPS CIRCUIT DIAGRAM tea1506p tea1507 TEA1620 BUK2914-50SYTS BUK2114-50SYTS BU4508DX equivalent BU4522AX BUK2914
    Contextual Info: Power Management Power Management 189 Automotive MOSFETs General Purpose Automotive GPA TrenchMOS types in bold red represent new products 190 VDS RDS(ON) @VGS ID (max) SC73 (SOT223) (V) (mΩ) (V) 30 30 5 5 10 5 @ 25°C (A) 75 75 30 13 10 55 BUK6213-30A


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    biss 0001

    Abstract: PBLS1504V PEMD4 PEMD15 PEMH15 PEMH24 PBLS1503V PEMD6 PEMB10 PMZ250UN marking
    Contextual Info: NXP ultra-small diodes and transistors for portable applications Downsize the footprint, boost the performance At NXP, our comprehensive portfolio of ultra-small diodes and transistors enables high performance in increasingly small portable electronics. We safeguard sensitive ICs with advanced


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    packag35ot984hxs0n12ot985+11hxs0n16biss 0001pbls1504vpemd4pemd15pemh15pemh24pbls1503vpemd6pemb10pmz250un marking PDF

    BSS138 NXP

    Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
    Contextual Info: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


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    2N7002 NXP MARKING

    Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
    Contextual Info: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and


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    od323sc-76od882dod882+11od123f2n7002 nxp markingtl431 transistor 139 etcd player amplifier double ic 4440bcm 4709sot1194ssop14 land patternip4065cx11pmv27uptransistor smd code package sot89 gyip4058cx8/lf PDF

    PHP45NQ10TA

    Abstract: Ph9030l PMV213SN PHD66NQ03LT BUK9507-30B PHD78NQ BSH103 BUK95180-100A PSMN2R8-40PS BSH114
    Contextual Info: Power MOSFET Selection Guide 2009 Smaller, faster, cooler Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4


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    BSS84AKS

    Abstract: PHB27NQ10T BUK9575-100A BSS138p infineon PSMN1R5-40 LFPAK footprint Renesas PSMN013-100ES SOT323 MOSFET PH BUK95180-100A NX3008
    Contextual Info: Power MOSFET Selection Guide 2012 Smaller, faster, cooler 2 Table of contents 20 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 9


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    SC-75

    Abstract: PMR280UN SC75 PMR290XN PMR370XN PMR400UN PMR780SN
    Contextual Info: UTrenchMOS S fflS O T4 16 SC -7 5 ii^ K )20 V ,30 V iD60V(raN-$lilMC>SFETs mm m im m m >r a t t # T re n ch « ° Sem iconductors B S ililk f m M ’ x m 'J '' SO T323(SC -70-J^ )fnSO T363(SC -88-)K )ii^ ^ ^ IB M sK)KIB H20V,30Vfl]60V ^ TrenchM O S^ # ’


    OCR Scan
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