TRANSISTOR SG 14 Search Results
TRANSISTOR SG 14 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BLA1011-2 |
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Avionics LDMOS transistor |
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RX1214B300YI |
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RX1214B300Y - Microwave Power Transistor |
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CA3127MZ |
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CA3127 - Transistor Array |
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RX1214B130YI |
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NPN microwave power transistor |
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MX0912B251Y |
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NPN microwave power transistor |
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TRANSISTOR SG 14 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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transistor SG 14
Abstract: pHEMT transistor tgf2021 TGF2021-04 TGF2021-04-SG 4GHZ TRANSISTOR
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TGF2021-04-SG 20MHz TGF2021-04-SG TGF2021-04-SG. transistor SG 14 pHEMT transistor tgf2021 TGF2021-04 4GHZ TRANSISTOR | |
sg transistor
Abstract: TGF2021-08-SG rf transistor 320C TGF2021 4ghz transistor n "rf transistor"
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TGF2021-08-SG 20MHz TGF2021-08-SG TGF2021-08-SG. sg transistor rf transistor 320C TGF2021 4ghz transistor n "rf transistor" | |
Contextual Info: SGS-THOMSON iMm@ignnCTisì«ii Sgì BUL39D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED . HIGH RUGGEDNESS APPLICATIONS |
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BUL39D BUL39D | |
Contextual Info: SG S-TH O M SO N BUV298V [MOiglM&lieratMD NPN TRANSISTOR POWER MODULE . . . . . . . NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE |
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BUV298V | |
BUK455-500B
Abstract: T0220AB
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BUK455-500B T0220AB 711DflEb BUK455-500B | |
Contextual Info: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features |
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T2G6001528-SG T2G6001528-SG TQGaN25 | |
Contextual Info: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features |
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T2G6001528-SG T2G6001528-SG TQGaN25 | |
Contextual Info: S G S - T H O M S O N iMm@ignnCTisì«ii Sgì BU407 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATIONS . HORIZONTAL DEFLECTION FOR MONOCHROME TVs DESCRIPTION The BU407 is a silicon epitaxial planar NPN transistors in Jedec T0-220 plastic package. |
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BU407 BU407 T0-220 | |
Contextual Info: Product Description SGA-2186 Stanford M icrodevices’ SG A-2186 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 2.2V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT |
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SGA-2186 50-ohm DC-5000 | |
Contextual Info: Product Description SGA-3486 Stanford M icrodevices’ SG A-3486 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT |
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SGA-3486 50-ohm DC-2000 | |
Contextual Info: Product Description SGA-3286 Stanford M icrodevices’ SG A-3286 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT |
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SGA-3286 50-ohm DC-3600 | |
Contextual Info: Product Description SGA-3386 Stanford M icrodevices’ SG A-3386 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT |
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SGA-3386 50-ohm DC-3600 | |
Contextual Info: r r 7 SGS-THOMSON Ä 7 # iMm@ignnCTisi«ii Sg¡ BU406D BU407D SILICON NPN SWITCHING TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . NPN TRANSISTOR . VERY HIGH SWITCHING SPEED APPLICATIONS: . HORIZONTAL DEFLECTION FOR MONOCHROME TV DESCRIPTION The BU406D and BU407D are silicon planar |
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BU406D BU407D BU406D BU407D T0-220 33DATA | |
BU810Contextual Info: S G S -T H O M S O N iM m @ ignnCTisì«ii Sgì BU 810 MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON . LOW BASE-DRIVE REQUIREMENTS . FAST SWITCHING SPEED . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE |
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BU810 T0-220 | |
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Contextual Info: SG S-TH O M SO N RfflD0lsi i[Liera®[i!lDS$ BUF460AV NPN TRANSISTOR POWER MODULE . . . . . . . EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT |
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BUF460AV SC04840 F460AV | |
Contextual Info: 30E J> • 7*15^237 003DQbS S C S -T H O M S O N . s 1 ■ ' " P 'S t t - l ' * » « s - thohson ïlL U ra M O Ê S _ SG SP577 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP577 Voss 200 V R D S o n 0.17 n ' d 20 A • HIGH SPEED SWITCHING APPLICATIONS |
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003DQbS SP577 SGSP577 SC-0008/1 | |
2SB810
Abstract: JIS211 transistor C982 C382 n1j 048 ic 6116 IC 7824 ST
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2SB810 O2SD1020ta d11736jj4v0ds00 JIS211 2SB810 JIS211 transistor C982 C382 n1j 048 ic 6116 IC 7824 ST | |
diode a4W
Abstract: 74ACT04 BAS28 BAT74 FTF6146 FTF6146C ccd application vns transistor a4y
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FTF6146C 6096H diode a4W 74ACT04 BAS28 BAT74 FTF6146 FTF6146C ccd application vns transistor a4y | |
S1533Contextual Info: IMAGE SENSOR CCD area image sensor S7199-01 Front-illuminated FFT-CCDs for X-ray imaging S7199-01 is a family of FFT-CCD image sensors specifically designed for X-ray imaging. FOS Fiber Optic plate with Scintillator that converts X-ray into visible-light is mounted on a CCD chip, which enables S7199-01 to acquire the X-ray imaging. Two CCD |
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S7199-01 S7199-01 SE-171 KMPD1077E06 S1533 | |
sensor x-ray
Abstract: mosfet ssd
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S7199-01 S7199-01 SE-171 KMPD1077E08 sensor x-ray mosfet ssd | |
S1531
Abstract: 3CCD
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S8658-01 S8658-01 SE-171 KMPD1078E04 S1531 3CCD | |
sensor x-rayContextual Info: IMAGE SENSOR CCD area image sensor S8658-01 Front-illuminated FFT-CCD for X-ray imaging S8658-01 is a FFT-CCD area image sensor specifically developed for X-ray imaging. Since a FOS Fiber Optic plate with Scintillator to convert Xrays into visible light is mounted on the CCD chip, X-ray images can be captured in fine detail. Three CCD chips are linearly arranged in close |
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S8658-01 S8658-01 SE-171 KMPD1078E05 sensor x-ray | |
Contextual Info: IMAGE SENSOR CCD area image sensor S7199-01 Front-illuminated FFT-CCDs for X-ray imaging S7199-01 is a family of FFT-CCD image sensors specifically designed for X-ray imaging. FOS Fiber Optic plate with Scintillator that converts X-ray into visible-light is mounted on a CCD chip, which enables S7199-01 to acquire the X-ray imaging. Two CCD |
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S7199-01 S7199-01 SE-171 KMPD1077E07 | |
mpp a2
Abstract: s1533
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S7199 S7199 SE-171 KMPD1047E06 mpp a2 s1533 |