TRANSISTOR SG 14 Search Results

transistor SG 14

Abstract: pHEMT transistor tgf2021 TGF2021-04 TGF2021-04-SG 4GHZ TRANSISTOR
Contextual Info: TrìQuint SEMICONDUCTOR TGF2021-04-SG 4 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The TriQuint TGF2021-04-SG is a 4 Watt P1dB discrete 4mm pHEMT RF Transistor operating at 12 volts. Both de­ fense and commercial markets can take advantage of the

sg transistor

Abstract: TGF2021-08-SG rf transistor 320C TGF2021 4ghz transistor n "rf transistor"
Contextual Info: TrìQuint SEMICONDUCTOR TGF2021-08-SG 7 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The T riQ uint TG F2021-08-SG is a discrete 7 W a tt P1dB Transistor operating at 12 volts. The device produces 7W P1dB RF output power at 4GHz. Both defense and com m ercial m arkets can take advantage

Contextual Info: SGS-THOMSON iMm@ignnCTisì«ii Sgì BUL39D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED . HIGH RUGGEDNESS APPLICATIONS

Contextual Info: SG S-TH O M SO N BUV298V [MOiglM&lieratMD NPN TRANSISTOR POWER MODULE . . . . . . . NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

BUK455-500B

Abstract: T0220AB
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711Gâ2ti GObMGTb SGÔ M P H I N Philips Semiconductors Product Spécification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features

Contextual Info: S G S - T H O M S O N iMm@ignnCTisì«ii Sgì BU407 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATIONS . HORIZONTAL DEFLECTION FOR MONOCHROME TVs DESCRIPTION The BU407 is a silicon epitaxial planar NPN transistors in Jedec T0-220 plastic package.

Contextual Info: Product Description SGA-2186 Stanford M icrodevices’ SG A-2186 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 2.2V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Product Description SGA-3486 Stanford M icrodevices’ SG A-3486 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Product Description SGA-3286 Stanford M icrodevices’ SG A-3286 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: Product Description SGA-3386 Stanford M icrodevices’ SG A-3386 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT

Contextual Info: r r 7 SGS-THOMSON Ä 7 # iMm@ignnCTisi«ii Sg¡ BU406D BU407D SILICON NPN SWITCHING TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . NPN TRANSISTOR . VERY HIGH SWITCHING SPEED APPLICATIONS: . HORIZONTAL DEFLECTION FOR MONOCHROME TV DESCRIPTION The BU406D and BU407D are silicon planar

BU810

Contextual Info: S G S -T H O M S O N iM m @ ignnCTisì«ii Sgì BU 810 MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON . LOW BASE-DRIVE REQUIREMENTS . FAST SWITCHING SPEED . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

Contextual Info: SG S-TH O M SO N RfflD0lsi i[Liera®[i!lDS$ BUF460AV NPN TRANSISTOR POWER MODULE . . . . . . . EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT

Contextual Info: 30E J> • 7*15^237 003DQbS S C S -T H O M S O N . s 1 ■ ' " P 'S t t - l ' * » « s - thohson ïlL U ra M O Ê S _ SG SP577 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP577 Voss 200 V R D S o n 0.17 n ' d 20 A • HIGH SPEED SWITCHING APPLICATIONS

2SB810

Abstract: JIS211 transistor C982 C382 n1j 048 ic 6116 IC 7824 ST
Contextual Info: V y □ > h 7 > y X ^ Silicon Transistor 2SB810 P N P x \£ 2 * 4$ V y ' j a > h 7 > v X 5 f *M $ B I « # t : mm * - b v h x H ï îfiO i£ J B  lÜ * f fl,  * Œ * * 3 t Sg » 0> * - * K 7 -T 7 , * <& {*#» K 5 < O ig h F E T 4 .0 ± 0 .2 U T ftiS T T o

diode a4W

Abstract: 74ACT04 BAS28 BAT74 FTF6146 FTF6146C ccd application vns transistor a4y
Contextual Info: IMAGE SENSORS DATA SHEET FTF6146C 28M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2008, January 14 DALSA Professional Imaging Product Specification 28M Full-Frame CCD Image Sensor • Image format 44 x 33 mm • 28M active pixels (6096H x 4560V)

S1533

Contextual Info: IMAGE SENSOR CCD area image sensor S7199-01 Front-illuminated FFT-CCDs for X-ray imaging S7199-01 is a family of FFT-CCD image sensors specifically designed for X-ray imaging. FOS Fiber Optic plate with Scintillator that converts X-ray into visible-light is mounted on a CCD chip, which enables S7199-01 to acquire the X-ray imaging. Two CCD

sensor x-ray

Abstract: mosfet ssd
Contextual Info: IMAGE SENSOR CCD area image sensor S7199-01 Front-illuminated FFT-CCDs for X-ray imaging S7199-01 is a family of FFT-CCD image sensors specifically designed for X-ray imaging. FOS Fiber Optic plate with Scintillator that converts X-ray into visible-light is mounted on a CCD chip, which enables S7199-01 to acquire the X-ray imaging. Two CCD

S1531

Abstract: 3CCD
Contextual Info: IMAGE SENSOR CCD area image sensor S8658-01 Front-illuminated FFT-CCD for X-ray imaging S8658-01 is a FFT-CCD area image sensor specifically developed for X-ray imaging. Since a FOS Fiber Optic plate with Scintillator to convert Xrays into visible light is mounted on the CCD chip, X-ray images can be captured in fine detail. Three CCD chips are linearly arranged in close

sensor x-ray

Contextual Info: IMAGE SENSOR CCD area image sensor S8658-01 Front-illuminated FFT-CCD for X-ray imaging S8658-01 is a FFT-CCD area image sensor specifically developed for X-ray imaging. Since a FOS Fiber Optic plate with Scintillator to convert Xrays into visible light is mounted on the CCD chip, X-ray images can be captured in fine detail. Three CCD chips are linearly arranged in close

Contextual Info: IMAGE SENSOR CCD area image sensor S7199-01 Front-illuminated FFT-CCDs for X-ray imaging S7199-01 is a family of FFT-CCD image sensors specifically designed for X-ray imaging. FOS Fiber Optic plate with Scintillator that converts X-ray into visible-light is mounted on a CCD chip, which enables S7199-01 to acquire the X-ray imaging. Two CCD

mpp a2

Abstract: s1533
Contextual Info: IMAGE SENSOR CCD area image sensor S7199 Front-illuminated FFT-CCDs for X-ray imaging S7199 is a family of FFT-CCD image sensors specifically designed for X-ray imaging. FOS Fiber Optic plate with Scintillator that converts X-ray into visible-light is mounted on a CCD chip, which enables S7199 to do the X-ray imaging. Two CCD chips of