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    TRANSISTOR SG 14 Search Results

    TRANSISTOR SG 14 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-2
    Rochester Electronics LLC Avionics LDMOS transistor PDF Buy
    RX1214B300YI
    Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor PDF Buy
    CA3127MZ
    Rochester Electronics LLC CA3127 - Transistor Array PDF Buy
    RX1214B130YI
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    MX0912B251Y
    Rochester Electronics LLC NPN microwave power transistor PDF Buy

    TRANSISTOR SG 14 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor SG 14

    Abstract: pHEMT transistor tgf2021 TGF2021-04 TGF2021-04-SG 4GHZ TRANSISTOR
    Contextual Info: TrìQuint SEMICONDUCTOR TGF2021-04-SG 4 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The TriQuint TGF2021-04-SG is a 4 Watt P1dB discrete 4mm pHEMT RF Transistor operating at 12 volts. Both de­ fense and commercial markets can take advantage of the


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    TGF2021-04-SG 20MHz TGF2021-04-SG TGF2021-04-SG. transistor SG 14 pHEMT transistor tgf2021 TGF2021-04 4GHZ TRANSISTOR PDF

    sg transistor

    Abstract: TGF2021-08-SG rf transistor 320C TGF2021 4ghz transistor n "rf transistor"
    Contextual Info: TrìQuint SEMICONDUCTOR TGF2021-08-SG 7 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The T riQ uint TG F2021-08-SG is a discrete 7 W a tt P1dB Transistor operating at 12 volts. The device produces 7W P1dB RF output power at 4GHz. Both defense and com m ercial m arkets can take advantage


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    TGF2021-08-SG 20MHz TGF2021-08-SG TGF2021-08-SG. sg transistor rf transistor 320C TGF2021 4ghz transistor n "rf transistor" PDF

    Contextual Info: SGS-THOMSON iMm@ignnCTisì«ii Sgì BUL39D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION . VERY HIGH SWITCHING SPEED . HIGH RUGGEDNESS APPLICATIONS


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    BUL39D BUL39D PDF

    Contextual Info: SG S-TH O M SO N BUV298V [MOiglM&lieratMD NPN TRANSISTOR POWER MODULE . . . . . . . NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


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    BUV298V PDF

    BUK455-500B

    Abstract: T0220AB
    Contextual Info: PHILIPS INTERNATIONAL bSE D B 711Gâ2ti GObMGTb SGÔ M P H I N Philips Semiconductors Product Spécification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    BUK455-500B T0220AB 711DflEb BUK455-500B PDF

    Contextual Info: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


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    T2G6001528-SG T2G6001528-SG TQGaN25 PDF

    Contextual Info: T2G6001528-SG 15W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


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    T2G6001528-SG T2G6001528-SG TQGaN25 PDF

    Contextual Info: S G S - T H O M S O N iMm@ignnCTisì«ii Sgì BU407 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATIONS . HORIZONTAL DEFLECTION FOR MONOCHROME TVs DESCRIPTION The BU407 is a silicon epitaxial planar NPN transistors in Jedec T0-220 plastic package.


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    BU407 BU407 T0-220 PDF

    Contextual Info: Product Description SGA-2186 Stanford M icrodevices’ SG A-2186 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 2.2V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    SGA-2186 50-ohm DC-5000 PDF

    Contextual Info: Product Description SGA-3486 Stanford M icrodevices’ SG A-3486 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    SGA-3486 50-ohm DC-2000 PDF

    Contextual Info: Product Description SGA-3286 Stanford M icrodevices’ SG A-3286 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    SGA-3286 50-ohm DC-3600 PDF

    Contextual Info: Product Description SGA-3386 Stanford M icrodevices’ SG A-3386 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    SGA-3386 50-ohm DC-3600 PDF

    Contextual Info: r r 7 SGS-THOMSON Ä 7 # iMm@ignnCTisi«ii Sg¡ BU406D BU407D SILICON NPN SWITCHING TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . NPN TRANSISTOR . VERY HIGH SWITCHING SPEED APPLICATIONS: . HORIZONTAL DEFLECTION FOR MONOCHROME TV DESCRIPTION The BU406D and BU407D are silicon planar


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    BU406D BU407D BU406D BU407D T0-220 33DATA PDF

    BU810

    Contextual Info: S G S -T H O M S O N iM m @ ignnCTisì«ii Sgì BU 810 MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON . LOW BASE-DRIVE REQUIREMENTS . FAST SWITCHING SPEED . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE


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    BU810 T0-220 PDF

    Contextual Info: SG S-TH O M SO N RfflD0lsi i[Liera®[i!lDS$ BUF460AV NPN TRANSISTOR POWER MODULE . . . . . . . EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT


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    BUF460AV SC04840 F460AV PDF

    Contextual Info: 30E J> • 7*15^237 003DQbS S C S -T H O M S O N . s 1 ■ ' " P 'S t t - l ' * » « s - thohson ïlL U ra M O Ê S _ SG SP577 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP577 Voss 200 V R D S o n 0.17 n ' d 20 A • HIGH SPEED SWITCHING APPLICATIONS


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    003DQbS SP577 SGSP577 SC-0008/1 PDF

    2SB810

    Abstract: JIS211 transistor C982 C382 n1j 048 ic 6116 IC 7824 ST
    Contextual Info: V y □ > h 7 > y X ^ Silicon Transistor 2SB810 P N P x \£ 2 * 4$ V y ' j a > h 7 > v X 5 f *M $ B I « # t : mm * - b v h x H ï îfiO i£ J B  lÜ * f fl,  * Œ * * 3 t Sg » 0> * - * K 7 -T 7 , * <& {*#» K 5 < O ig h F E T 4 .0 ± 0 .2 U T ftiS T T o


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    2SB810 O2SD1020ta d11736jj4v0ds00 JIS211 2SB810 JIS211 transistor C982 C382 n1j 048 ic 6116 IC 7824 ST PDF

    diode a4W

    Abstract: 74ACT04 BAS28 BAT74 FTF6146 FTF6146C ccd application vns transistor a4y
    Contextual Info: IMAGE SENSORS DATA SHEET FTF6146C 28M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2008, January 14 DALSA Professional Imaging Product Specification 28M Full-Frame CCD Image Sensor • Image format 44 x 33 mm • 28M active pixels (6096H x 4560V)


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    FTF6146C 6096H diode a4W 74ACT04 BAS28 BAT74 FTF6146 FTF6146C ccd application vns transistor a4y PDF

    S1533

    Contextual Info: IMAGE SENSOR CCD area image sensor S7199-01 Front-illuminated FFT-CCDs for X-ray imaging S7199-01 is a family of FFT-CCD image sensors specifically designed for X-ray imaging. FOS Fiber Optic plate with Scintillator that converts X-ray into visible-light is mounted on a CCD chip, which enables S7199-01 to acquire the X-ray imaging. Two CCD


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    S7199-01 S7199-01 SE-171 KMPD1077E06 S1533 PDF

    sensor x-ray

    Abstract: mosfet ssd
    Contextual Info: IMAGE SENSOR CCD area image sensor S7199-01 Front-illuminated FFT-CCDs for X-ray imaging S7199-01 is a family of FFT-CCD image sensors specifically designed for X-ray imaging. FOS Fiber Optic plate with Scintillator that converts X-ray into visible-light is mounted on a CCD chip, which enables S7199-01 to acquire the X-ray imaging. Two CCD


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    S7199-01 S7199-01 SE-171 KMPD1077E08 sensor x-ray mosfet ssd PDF

    S1531

    Abstract: 3CCD
    Contextual Info: IMAGE SENSOR CCD area image sensor S8658-01 Front-illuminated FFT-CCD for X-ray imaging S8658-01 is a FFT-CCD area image sensor specifically developed for X-ray imaging. Since a FOS Fiber Optic plate with Scintillator to convert Xrays into visible light is mounted on the CCD chip, X-ray images can be captured in fine detail. Three CCD chips are linearly arranged in close


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    S8658-01 S8658-01 SE-171 KMPD1078E04 S1531 3CCD PDF

    sensor x-ray

    Contextual Info: IMAGE SENSOR CCD area image sensor S8658-01 Front-illuminated FFT-CCD for X-ray imaging S8658-01 is a FFT-CCD area image sensor specifically developed for X-ray imaging. Since a FOS Fiber Optic plate with Scintillator to convert Xrays into visible light is mounted on the CCD chip, X-ray images can be captured in fine detail. Three CCD chips are linearly arranged in close


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    S8658-01 S8658-01 SE-171 KMPD1078E05 sensor x-ray PDF

    Contextual Info: IMAGE SENSOR CCD area image sensor S7199-01 Front-illuminated FFT-CCDs for X-ray imaging S7199-01 is a family of FFT-CCD image sensors specifically designed for X-ray imaging. FOS Fiber Optic plate with Scintillator that converts X-ray into visible-light is mounted on a CCD chip, which enables S7199-01 to acquire the X-ray imaging. Two CCD


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    S7199-01 S7199-01 SE-171 KMPD1077E07 PDF

    mpp a2

    Abstract: s1533
    Contextual Info: IMAGE SENSOR CCD area image sensor S7199 Front-illuminated FFT-CCDs for X-ray imaging S7199 is a family of FFT-CCD image sensors specifically designed for X-ray imaging. FOS Fiber Optic plate with Scintillator that converts X-ray into visible-light is mounted on a CCD chip, which enables S7199 to do the X-ray imaging. Two CCD chips of


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    S7199 S7199 SE-171 KMPD1047E06 mpp a2 s1533 PDF