TRANSISTOR S1D Search Results

TRANSISTOR S1d

Abstract: AX 1101
Contextual Info: SIEMENS SMBTA 42M NPN Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 92M PNP m h Q62702-A1243 CO II s1D o SMBTA 42M Pin Configuration PO II Marking Ordering Code CD Type

TRANSISTOR S1d

Abstract: BCW66 SMBTA92
Contextual Info: SMBTA42/MMBTA42 NPN Silicon Transistor for High Voltages 3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42/MMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings

BSD215

Abstract: bsd214 BSD212 BSD213 transistor BD 341
Contextual Info: 711QöSb S1D IPHIN BSD212 to BSD215 MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. These transistors are hermetically sealed in a TO-72 envelope and feature a low ON-resistance, high

IS21E

Abstract: Transistor S1D
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE S1D43 tentative OVHF UHF BAND LOW NOISE AM P L I F IE R APLICATIONS Iß I ooWöI Low Noise : Figure : NF=1.5dB(at f=2GHz) High Gain : IS21e 12=16dB(at f=2GHz) MAXIMUM RATINGS SYMBOL RATING UNIT

1000w inverter PURE SINE WAVE schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
Contextual Info: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design

power transistor 1802

Abstract: transistor 010C ARF1510
Contextual Info: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

power transistor 1802

Abstract: ARF1511 750w planar transistor C 4927 rf power generator ARF 250v 1500w
Contextual Info: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

Contextual Info: PACKAGE H V V0405-175 H igh Voltage, H igh Ruggedness U H F Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle ! For U H F band, Weather and Long Range Radar Applications ! The innovative Semiconductor Company! ! ! ! ! ! ! ABSOLUTE MAXIMUM RATING IEC 134

flyback uc3842 sync

Abstract: what are function of horizontal section of tv S1D2511B01 S1D2511B01-A0B0 uc3842 ic pin definition c0820pf transistor horizontal section tv UC3842 flyback
Contextual Info: DEFLECTION PROCESSOR FOR MULTISYNC MONITORS S1D2511B01 DEFLECTION PROCESSOR 32-SDIP-400 The S1D2511B01 is a monolithc integrated circuit assembled in 32 pins shrunk dual in line plastic package. This IC controls all the functions related to the horizontal and vertical deflection in multimodes or multifrequency computer display monitors.

UC3842 smps design

Abstract: what are function of vertical section of tv rs-flip-flop block diagram h.out transistor flyback uc3842 sync phillips crt TV vertical section what are function of horizontal section of tv KB2512 S1D2512X01
Contextual Info: JUL. 2000 Ver 0.3 DATA SHEET S1D2512X01 Preliminary S1D2512X01 DEFLECTION PROCESSOR FOR MULTISYNC MONITORS DEFLECTION PROCESSOR 32-SDIP-400 The S1D2512X01 is a monolithic integrated circuit assembled in 32 pins shrunk dual in line plastic package. This IC controls all the functions

vertical section

Abstract: transistor 6w capacitor 100uF/16V ic 1N4148 pin configuration 1N4148 S1D2147A01 S1D2147A01-A0B0 S1D2147
Contextual Info: DEFLECTION PROCESSOR FOR MULTISYNC MONITORS S1D2147A01 DEFLECTION PROCESSOR 42-SDIP-600 The S1D2147A01is a monolithic integrated circuit assembled in a 42 pins shrunk dual in line plastic package. The goal of this IC is to control all the functions related to the

Contextual Info: QJD1210007 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP)

Contextual Info: QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP)

c 103 mosfet

Abstract: silicon carbide 1200-VOLT QJD1210006
Contextual Info: QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP)

MOSFET 1000 VOLTS

Abstract: QJD1210006 MOSFET 20V 100A schottky diode 100A silicon carbide mosfet transistor 800 volts.300 amperes
Contextual Info: QJD1210006 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Silicon Carbide MOSFET Module 100 Amperes/1200 Volts A Y D K K K Y F S2 G2 U S2 D1 Z AB H M AA Q EB UU J G1 S1 S1D2 H AC Q P U AD G N S - NUTS (3 TYP) T - (4 TYP)

scientific imaging technologies

Abstract: scientific imaging technologies inc TRANSISTOR S1d TRANSISTOR S1A 64 SI-424A SI-424 mpp schematic TRANSISTOR S1A 41
Contextual Info: SCIENTIFIC IMAGING TECHNOLOGIES, INC. 2048 x 2048 pixel format 24µm square • Front-illuminated or thinned, back-illuminated versions ■ Unique thinning and Quantum Efficiency enhancement processes ■ Excellent QE from IR to UV ■ Anti-reflection coating

transistor SMD 12W MOSFET

Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
Contextual Info: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

Matsua PM48

Abstract: Matsua PM48A pm48a LT48W Matsushita lt48 timer PM48M Matsushita PM48 lt48 matsushita PM48W pdx matsushita
Contextual Info: ’06–’07 Timers/Time Switches/Counters/Hour Meters Timers/Time Switches/Counters/Hour Meters ’06–’07 Please contact . Matsushita Electric Works, Ltd. Automation Controls Business Unit Head Office: 1048, Kadoma, Kadoma-shi, Osaka 571-8686, Japan

panasonic inverter manual vf 200

Abstract: panasonic inverter manual vf 100 MBDHT2510 MANUAL npn transistor w26 CY-122A-P-Z
Contextual Info: 02/04/2013 Overview Panasonic automation products Panasonic offers a broad spectrum of products for all automation tasks, sensors, PLCs, HMIs, Servo Drives and FA Components. Along with our service philosophy to advise and take care of our customers, products

AN8610

Abstract: UF 407 Diode HIP2060AS1 HIP2060 HIP2060AS2 HIP2060AS3 MO-169 12v class d amplifier 70W
Contextual Info: HIP2060 60V, 10A Half Bridge Power MOSFET Array April 1998 Features Description • Two 10A Power MOS N-Channel Transistors The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS transistors. The advanced Intersil PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness.

AN8610

Abstract: 12v class d amplifier 70W lambda IC 101 Switching Power supply with HIP4080A HIP2060 HIP2060AS1 HIP2060AS2 HIP2060AS3 MO-169 ic 067b
Contextual Info: HIP2060 TM 60V, 10A Half Bridge Power MOSFET Array April 1998 Features Description • Two 10A Power MOS N-Channel Transistors The HIP2060 is a power half-bridge MOSFET array that consists of two matched N-Channel enhancement-mode MOS transistors. The advanced Intersil PASIC2 process technology used in this product utilizes efficient geometries that provides outstanding device performance and ruggedness.

104 capacitor

Abstract: diode 1,5k crt rgb moniter I22H S3 P20 S1D2518X01 V22H samsung crt monitor osd
Contextual Info: DECEMBER. 2001 Ver 2.1 DATA SHEET S1D2518X01 Preliminary Preliminary I2C BUS CONTROLLED R/G/B VIDEO AMPLIFIER FOR MONITORS S1D2518X01 I2C BUS CONTROLLED R/G/B VIDEO AMPLIFIER 30-SDIP-400 2 The S1D2518X01 is a high frequency video amplifier system with I C

matsua lt48 digital quartz timer

Abstract: Matsushita lt48 timer Matsua lt48 timer matsushita lt48 digital quartz timer Matsua timer PM48 Matsushita timer PM48 LT48 digital quartz timer AT8-DF8K Matsushita lt48w twin timer lc48
Contextual Info: ’06–’07 Timers/Time Switches/Counters/Hour Meters Timers/Time Switches/Counters/Hour Meters ’06–’07 Please contact . Matsushita Electric Works, Ltd. Automation Controls Business Unit Head Office: 1048, Kadoma, Kadoma-shi, Osaka 571-8686, Japan