TRANSISTOR S1D Search Results

TRANSISTOR S1d

Abstract: Q62702-A1243 SCT-595
Contextual Info: SMBTA 42M NPN Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 92M PNP 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 42M s1D Q62702-A1243 Package

TRANSISTOR S1d

Abstract: AX 1101
Contextual Info: SIEMENS SMBTA 42M NPN Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 92M PNP m h Q62702-A1243 CO II s1D o SMBTA 42M Pin Configuration PO II Marking Ordering Code CD Type

TRANSISTOR S1d

Abstract: SMBTA42 SMBTA92
Contextual Info: SMBTA42 NPN Silicon Transistor for High Voltages 3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter

TRANSISTOR S1d

Abstract: smbta42
Contextual Info: SMBTA42 NPN Silicon Transistor for High Voltages 3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter

TRANSISTOR S1d

Contextual Info: SMBTA42 NPN Silicon Transistor for High Voltages 3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings Parameter

TRANSISTOR S1d

Abstract: BCW66 SMBTA92
Contextual Info: SMBTA42/MMBTA42 NPN Silicon Transistor for High Voltages 3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42/MMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings

TRANSISTOR S1d

Abstract: SMBTA92
Contextual Info: SMBTA42/MMBTA42 NPN Silicon Transistor for High Voltages 3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42/MMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings

Contextual Info: SMBTA42/MMBTA42 NPN Silicon Transistor for High Voltages 3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: SMBTA92 PNP 2 1 Type Marking SMBTA42/MMBTA42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings

BSD215

Abstract: bsd214 BSD212 BSD213 transistor BD 341
Contextual Info: 711QöSb S1D IPHIN BSD212 to BSD215 MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. These transistors are hermetically sealed in a TO-72 envelope and feature a low ON-resistance, high

TRANSISTOR S1d

Abstract: s1D marking, datasheet sot-23
Contextual Info: SMBTA 42 NPN Silicon Transistor for High Voltages 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 92 PNP 2 1 Type Marking SMBTA 42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings

TRANSISTOR S1d

Contextual Info: SMBTA42M NPN Silicon High-Voltage Transistor 4
High breakdown voltage
Low collector-emitter saturation voltage 5
Complementary type: SMBTA92M PNP 3 2 1 VPW05980 Type Marking SMBTA42M s1D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings

TRANSISTOR S1d

Abstract: SCT595 SMBTA42M SMBTA92M
Contextual Info: SMBTA42M NPN Silicon High-Voltage Transistor 4
High breakdown voltage
Low collector-emitter saturation voltage 5
Complementary type: SMBTA92M PNP 3 2 1 VPW05980 Type Marking SMBTA42M s1D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT595 Maximum Ratings

Contextual Info: SIEMENS SMBTA 42 NPN Silicon Transistor for High Voltages • High breakdown voltage • Low collector-em itter saturation voltage • C om plem entary types: SM BTA 92 PNP Type Marking Ordering Code Pin Configuration SM BTA 42 s1D Q 68000-A6482 1 =B 2=E

TRANSISTOR S1d

Abstract: SCT-595
Contextual Info: SMBTA 42M NPN Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 92M PNP 3 2 1 VPW05980 Type Marking SMBTA 42M s1D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595

1000w inverter PURE SINE WAVE schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
Contextual Info: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design

power transistor 1802

Abstract: transistor 010C ARF1510
Contextual Info: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

ARF1511

Abstract: 225MH
Contextual Info: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

power transistor 1802

Abstract: ARF1511 750w planar transistor C 4927 rf power generator ARF 250v 1500w
Contextual Info: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

Contextual Info: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

Contextual Info: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 G3 G1 S3D4 ARF1511 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 380V G2 G4 S2 S4 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

Contextual Info: D1 ARF1510 D3 G1 D3 D1 G3 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 S3D4 G4 RF POWER MOSFET S2 FULL-BRIDGE S4 400V G2 G4 S2 S4 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40

AMPLIFIER 1500w

Abstract: Simple test MOSFET Procedures Transistor S1D ARF1510 750w planar transistor AN 1510
Contextual Info: D1 ARF1510 D3 G1 S1D2 G3 G1 S3D4 ARF1510 S1D2 G2 RF POWER MOSFET D3 D1 G3 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 400V 750W 40MHz The ARF1510 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.

rf power generator

Abstract: ARF1511 750w planar transistor ARF 250v 1500w
Contextual Info: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 ARF1511 S1D2 G2 RF POWER MOSFET G3 G1 S3D4 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 380V 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.

C 4927

Abstract: AMPLIFIER 1500w Simple test MOSFET Procedures ARF1511
Contextual Info: D1 ARF1511 D3 D3 D1 G1 G3 S1D2 ARF1511 S1D2 G2 RF POWER MOSFET G3 G1 S3D4 S3D4 G4 S2 G2 G4 S2 S4 S4 FULL-BRIDGE 380V 750W 40MHz The ARF1511 is four RF power transistor arranged in an H-Bridge configuration. It is intended for off-line 300V operation in high power scientific, medical and, industrial RF power generator and amplifier applications up to 40 MHz.