MRF262
Abstract: MRF264 MRF260 MRF261
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF261 The RF Line 10W 136 175 MHz NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR . . . designed for 12.5 Volt VHF large-signal power am plifier appli cations in commercial and industrial equipment. NPN SILICO N
|
OCR Scan
|
mrf261o-220abmrf260mrf262+1mrf264
|
PDF
|
2SC4093
Abstract: 2SC4093-T1 R26 transistor R27 transistor
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4093 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD DESCRIPTION The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
|
Original
|
2sc4093s21e22sc4093-t1r26 transistor+1r27 transistor
|
PDF
|
inductor vk200
Abstract: VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer
Contextual Info: i MRF238 MOTOROLA Advance Information 30 W — 160 MHz The RF Line RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed for 13.6 Volt VHF large»signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.
|
OCR Scan
|
mrf238inductor vk200vk200 inductorvk200-4b+6vk200 4b inductorvk200 rf chokerasistormarine radio02cmarco trimmer
|
PDF
|
56590653B
Abstract: BH Rf transistor
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed fo r 12.5 volt low band VHF large-signal power am plifier applications in commercial and industrial FM equipment. 70 W, 50 MHz RF POWER TRANSISTOR NPN SILICON
|
OCR Scan
|
56-590-65/3bmrf49256590653bbh rf transistor |
PDF
|
JLN 2003
Abstract: 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR
Contextual Info: PreliminaryData Sheet 2SC4226 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
|
Original
|
2sc4226r09ds0022ej0200s21e22sc4226-a+62sc4226-t1jln 20032sc4226 application notesnewmarket transistor2sc4226-t1-akorea electronics transistor
|
PDF
|
J476
Abstract: capacitor j476 NALCO
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF2628 The RF Line 15 W 136-220 M H i RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON Designed for 12.5 volt VHF large-signal power am plifiers in commercial and industrial FM equipment. • Compact .280 Stud Package
|
OCR Scan
|
mrf2628j476capacitor j476nalco |
PDF
|
transistor 2sc3355 and application
Abstract: transistor 2sc3355 and application NOTICE 2SC3355 2SC3355, npn 2SC3355-T PA33
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3355 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic.
|
Original
|
2sc33552sc3355-tpu10208ej01v0dstransistor 2sc3355 and application+3transistor 2sc3355 and application notice2sc3355, npnpa33
|
PDF
|
212J
Abstract: rd30hvf
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
|
Original
|
rd30hvf1175mhzrd30hvf1-101212j+1rd30hvf
|
PDF
|
2779, transistor
Abstract: 1348 transistor RD01MUS1 RD01MSU1 fet 547
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
|
Original
|
rd01mus1520mhz2779, transistor1348 transistor+2rd01msu1fet 547
|
PDF
|
transistor D 5024
Abstract: RD00HVS1 8582
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
|
Original
|
rd00hvs1175mhztransistor d 50248582 |
PDF
|
RD02MUS1
Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
|
Original
|
rd02mus1175mhz520mhzt112+4uhf transistor fetrd02mus1-1013m touch systemstransistor j17
|
PDF
|
RD30HVF1
Abstract: RD30HVF1-101 rf power transistor rd30hvf1 100OHM
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
|
Original
|
rd30hvf1175mhzrd30hvf1-101rf power transistor rd30hvf1+1100ohm
|
PDF
|
RD01MUS1-101
Abstract: RD01MUS1 c111m RD01MSU1 3M Touch Systems
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
|
Original
|
rd01mus1520mhzrd01mus1-101c111m+2rd01msu13m touch systems
|
PDF
|
RD07MUS2B
Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
|
Original
|
rd07mus2b175mhz527mhz870mhz+6transistor jc 817gp 520 diodegp 817rf power transistorf763transistor i 17-13 0773
|
PDF
|
|
|
3M Touch Systems
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
|
Original
|
rd02mus1175mhz520mhz3m touch systems |
PDF
|
RF Power transistor
Abstract: TV power transistor datasheet MSC638 BLV59 MBK442 MSC643 POWER transistor rf power transistors MDA505 TRANSISTOR 2132
Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 2 RF power transistors characteristics RF POWER TRANSISTOR CHARACTERISTICS 2.1 This section describes how to interpret and use the data published by Philips Semiconductors on its transmitting
|
Original
|
blv59rf power transistortv power transistor datasheetmsc638+6mbk442msc643power transistorrf power transistorsmda505transistor 2132
|
PDF
|
A 1469 mosfet
Abstract: Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM RD30HVF1 mosfet 800 v MITSUBISHI RF POWER MOS FET
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
|
Original
|
rd30hvf1175mhza 1469 mosfetpch mos fet+4s 170 mosfet transistor100ohmmosfet 800 vmitsubishi rf power mos fet
|
PDF
|
rd01mus1 applications
Abstract: RD01MUS1-101 3M Touch Systems
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
|
Original
|
rd01mus1520mhzrd01mus1-101rd01mus1 applications+13m touch systems
|
PDF
|
marking R33
Abstract: 2SC4227 2SC4227-T1
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4227 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
|
Original
|
2sc4227s21e22sc4227-t1marking r33 |
PDF
|
2SC4226
Abstract: 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
|
Original
|
2sc4226s21e22sc4226-t12sc4226 application notes+5pu10450ej01v0dsr25 marking2sc4226 datasheetmarking r25 npntransistor s2p
|
PDF
|
2SC4228
Abstract: 2SC4228-T1 TRANSISTOR R44
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
|
Original
|
2sc4228s21e22sc4228-t1transistor r44 |
PDF
|
RD30HVF1
Abstract: 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
|
Original
|
rd30hvf1175mhzrd30hvf1-101100ohm+2rd30hvfa 1469 mosfet
|
PDF
|
MITSUBISHI RF POWER MOS FET
Abstract: 071J
Contextual Info: < Silicon RF Power MOS FET Discrete > RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically DRAWING 22.0+/-0.3 designed for VHF RF power amplifiers applications. 18.0+/-0.3
|
Original
|
rd30hvf1175mhzrd30hvf1-101oct2011+2mitsubishi rf power mos fet071j
|
PDF
|
equivalent transistor c 243
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION 4.6MAX RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
|
Original
|
rd01mus1520mhz48max53max+1equivalent transistor c 243
|
PDF
|
