TRANSISTOR RF 1049 Search Results

GMA marking

Contextual Info: SIEMENS BFG 135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 G H z at collector currents from 70mA to 130mA • Power amplifiers for D ECT and PCN systems • Integrated emitter ballast resistor

Marking ANs

Abstract: Transistor C 5198 b 514 transistor BFP450
Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability

a06 transistor

Abstract: CHIP T503 S BFP450 siemens BFP450
Contextual Info: S IE M E N S SIEGET 25 BFP450 NPN Silicon RF Transistor • • • • • For Medium Power Amplifiers Compression Point P.1dB = +19 dBm at 1.8 GHz Maximum Available Gain G ma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency f j = 24 GHz

transistor s parameters noise

Abstract: BF 145 transistor
Contextual Info: SIEGET
25 BFP 450 NPN Silicon RF Transistor 3
For medium power amplifiers 4
Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2
Transition frequency f T = 24 GHz
Gold metallization for high reliability

Q62702-F1590

Abstract: 5198 transistor equivalent Transistor C 5198 VPS05605 transistor BI 342 746
Contextual Info: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3 • For medium power amplifiers 4 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain G ma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metalization for high reliability

thermal simulation of IC package

Abstract: VPS05605 24165V
Contextual Info: SIEGET
25 BFP 450 NPN Silicon RF Transistor 3
For medium power amplifiers 4
Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz 2
Transition frequency f T = 24 GHz
Gold metallization for high reliability

c 1027 transistor

Abstract: TRANSISTOR RF 1049 Power-Amplifier R1075
Contextual Info: _ W ire le s s /R F P ro d u c ts Wireless/RF Products. Product T a b le . 10-2 MAX2102 Direct-Conversion Tuner IC for Digital DBS

PCF7931AS

Abstract: PCF7935AS PCF79730S-3851 PCF7931 PCF7935 PCF7931XP/C PCF79730S pcf79735S PHILIPS PCF7935AS TDA4859ps
Contextual Info: Philips Semiconductors Product Discontinuations Notice DN44 December 31, 2000 SEE DN44 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

philips ON5134 transistor

Abstract: on5134 triacs bt 804 600v BT 804 triac tda3612 Triac bt 808 SMD Transistor W02 TRIAC BT 812 OM8838ps D203B
Contextual Info: Philips Semiconductors, Inc. Product Discontinuation Notice DN48A Exhibit A January 21, 2003 SEE DN48A NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.

Contextual Info: RF2903 M I C R O -DEVICES INTEGRATED SPREAD SPECTRUM RECEIVER Typical Applications • Spread Spectrum Systems • Dual Mode Digital/Analog Receivers • Dual-IF Strip for PCS and 2.4 GHz ISM • POS Terminals Band Receivers • Commercial Handheld Systems

PANDUIT connector 100F

Abstract: IC 40007 RF2903 PCC470C 2 GHz BJT high frequency high power transistor 300mhz bjt n
Contextual Info: RF RF2903 MICRO-DEVICES INTEGRATED SPREAD SPECTRUM RECEIVER Typical Applications • Spread Spectrum Systems • Dual Mode Digital/Analog Receivers • Dual-IF Strip for PCS and 2.4 GHz ISM • POS Terminals Band Receivers • Commercial Handheld Systems Product Description

SAV-581

Abstract: sot-343 "3570 1210" ATF-58143 MMM1362 N8975A
Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +30 dBm • Output Power at 1dB comp., +20 dBm • Medium Current, 30mA • Wide bandwidth • External biasing and matching required

"3570 1210"

Abstract: FG873 N4000A N8975A TAV-581 CC45T47K240G5
Contextual Info: Ultra Low Noise, Medium Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +31 dBm • Output Power at 1dB comp., +19 dBm • Low Current, 30mA • Wide bandwidth • External biasing and matching required

lm7805cv

Abstract: METAL DETECTOR PROGRAM PIC16F84 planar spiral coil Ferrite core 13.56 MHz RFID tag inductor antennas 5043cx100r0j PSK reader RFID FSK RFID reader SOURCE CODE ,microchip PG103001 DS00680C 4-henry choke
Contextual Info: microID 125 kHz RFID System Design Guide  2004 Microchip Technology Inc. DS51115F DATA SHEET MARKINGS Microchip uses various data sheet markings to designate each document phase as it relates to the product development stage. The markings appear at the bottom of the data sheet, between the copyright and document and page

PMA-5453

Abstract: MMIC 545 DQ849 N5242A ZX85-12G-S TB-501-3
Contextual Info: Ultra Low Noise MMIC Amplifier 50Ω PMA-5453+ 0.05 to 6 GHz The Big Deal • Ultra Low Noise Figure, 0.6 dB • High IP3/Low Current, 60mA • Wideband, up to 6 GHz 3mm x 3mm MCLP EIA: QFN Pkg Product Overview Mini-Circuits PMA-5453+ is a E-PHEMT based Ultra-Low Noise MMIC Amplifier operating from 50 MHz to 6

PMA-5454

Abstract: p.m.a ZX85-12G-S DQ849 N5242A DQ84
Contextual Info: Ultra Low Noise MMIC Amplifier 50Ω PMA-5454+ 0.05 to 6 GHz The Big Deal • Ultra Low Noise Figure, 0.8 dB • High IP3/Low Current, 20mA • Wideband, up to 6 GHz 3mm x 3mm MCLP EIA: QFN Pkg Product Overview Mini-Circuits PMA-5454+ is a E-PHEMT based Ultra-Low Noise MMIC Amplifier operating from 50 MHz to 6

PMA-5452

Abstract: Mini-Circuits PMA-5452 DQ849 N5242A ZX85-12G-S
Contextual Info: Ultra Low Noise MMIC Amplifier 50Ω PMA-5452+ 0.05 to 6 GHz The Big Deal • Ultra Low Noise Figure, 0.6 dB • High IP3/Low Current, 40mA • Wideband, up to 6 GHz 3mm x 3mm MCLP EIA: QFN Pkg Product Overview Mini-Circuits PMA-5452+ is a E-PHEMT based Ultra-Low Noise MMIC Amplifier operating from 50 MHz to 6

PL-299

Abstract: ZX85-12G-S PMA-5451 PMA5451 5451 DQ849 N5242A TRANSISTOR d 718 tb-501-1
Contextual Info: Ultra Low Noise MMIC Amplifier 50Ω PMA-5451+ 0.05 to 6 GHz The Big Deal • Ultra Low Noise Figure, 0.6 dB • High IP3/Low Current, 30mA • Wideband, up to 6 GHz 3mm x 3mm MCLP EIA: QFN Pkg Product Overview Mini-Circuits PMA-5451+ is a E-PHEMT based Ultra-Low Noise MMIC Amplifier operating from 50 MHz to

PMA-545

Abstract: pl-299 ZVA-24 PMA-545 S-Parameters BLK-18 DQ849 ZX85-12G-S microwave receiver LTE Receiver TRANSISTOR C 718
Contextual Info: Ultra Low Noise MMIC Amplifier 50Ω PMA-545+ 0.05 to 6 GHz The Big Deal • Ultra Low Noise Figure, 0.8 dB • Ultra High IP3 • Up to 6 GHz Product Overview 3mm x 3mm MCLP [ EIA: QFN Pkg Summary Performance at 1 GHz Mini-Circuits PMA-545+ is a E-PHEMT based Ultra-Low

CTC 1061

Abstract: transistor 2SB815 2SB815 2SB817 2SD1047 2SB832 2SB817 2SD1047
Contextual Info: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

PL301

Abstract: "3570 1210" FG873 N4000A N8975A
Contextual Info: Ultra Low Noise, Low Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 16 dB at 2 GHz • High Output IP3, +25 dBm • Low Current, 15mA • Wide bandwidth • External biasing and matching required TAV-551+ CASE STYLE: FG873

SAV-541

Abstract: SAV-541 S-PARAMETER MODEL ATF-54143 MMM1362 N8975A
Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +20 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

TAV-541

Abstract: FG873 N4000A N8975A tav 541
Contextual Info: Ultra Low Noise, High Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 17 dB at 2 GHz • High Output IP3, +33 dBm • Output Power at 1dB comp., +19 dBm • High Current, 60mA • Wide bandwidth • External biasing and matching required

"3570 1210"

Abstract: SAV-551 MMM1362 ATF-55143 N8975A avago marking style AVAGO 9933
Contextual Info: Ultra Low Noise, Low Current E-PHEMT 0.45-6GHz Product Features • Low Noise Figure, 0.5 dB • Gain, 16 dB at 2 GHz • High Output IP3, +25 dBm • Output Power at 1dB comp., +18 dBm • Low Current, 15mA • Wide bandwidth • External biasing and matching required