TRANSISTOR R2B Search Results

Helipot

Abstract: JAN2N5431 MIL-STD-750-Test capacitor ttc 342 J3 DIODE ST JANTX2N5431 20.000H unijunction application note
Contextual Info: MIL-S-19500/425 USAF 23 Sept 1969 V Mil S Sii CONDUCTOR DEVICE- TRANSISTOR. PN. SILICON. UNIJUNCTION JAN2N5431, and JANTX2N5431 1. SCOPE Scope. - This speciflcation covers the detail requirements for a PN, silicon, unijunction transistor. The prefis "TX” is used

RF NPN POWER TRANSISTOR 3 GHZ

Abstract: RF NPN POWER TRANSISTOR 3 GHZ 200 watts
Contextual Info: ERICSSON ^ PTE 20173* 60 Watts, 1.4-1.5 GHz RF Power Transistor Description The 20173 is a preliminary class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across 1.4 to 1.5 GHz frequency band. It is rated at 60 watts minimum output power and

Contextual Info: N AMER PHILIPS/DISCRETE 0inE D ^53*131 0D1S5A7 □ RZB12250Y r- %-*>'- s' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.

JX - 638

Contextual Info: ERICSSON ^ PTB 20190 175 Watts, 470-806 MHz Digital Television Power Transistor D escription The 20190 is a class AB, NPN, common emitter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Rated at 175 watts output power, it is specifically

c38 transistor

Abstract: 3 w RF POWER TRANSISTOR NPN 5.8 ghz
Contextual Info: ERICSSON ^ PTB 20125 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20125 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation across the 1.8 to 2.0 GHz band. Rated at 100 w atts PEP minim um output power, it is specifically intended for

Contextual Info: ERICSSON ^ PTB 20202 125 Watts, 1465-1513 MHz Cellular/DAB RF Power Transistor Description The 20202 is an NPN com m on em itter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 125 watts minim um output power, it is specifically intended for cellular

Ericsson RF POWER TRANSISTOR

Contextual Info: ERICSSON ^ PTB 20175 55 Watts, 1.9-2.00 GHz Cellular Radio RF Power Transistor Description The 20175 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across 1.9 to 2.0 GHz frequency band. It is rated at 55 watts minimum output power and may be used for

diode LT 1n4007

Abstract: transistor BC337 bc337 transistor Zener diode 9.1 22 pf trimmer 100A1R3BP50 22 pf trimmer capacitor 100A101JP50 3 pin TRIMMER capacitor 1n4007 mttf
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA TP V 5055B The RF Line UHF Linear Power Transistor 50 W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR NPN SILICON . . . designed fo r o u tp u t stages in Band IV & V TV tra n s m itte r a m plifiers. Interna! m a tch ­

LM1946M

Abstract: 8707 diode LM1946N C1995 LM1946 ir 8707 RL2008-52 8707 ic
Contextual Info: LM1946 Over Under Current Limit Diagnostic Circuit General Description Features The LM1946 provides the industrial or automotive system designer with over or under current limit detection superior to that of ordinary transistor or comparator-based circuits

marking c14a

Abstract: RO3010 mrf372 marking L4A c7a series vishay capacitor NTHS-1206J14520R5 bc16a C15B transistor D 863 vishay 1001
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of

marking c14a

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF372 Rev. 9, 5/2006 RF Power Field-Effect Transistor MRF372R3 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of

RO3010

Abstract: marking c14a marking R5b device L1a marking L1A marking on device marking r4b diode C14A marking us capacitor pf l1 R4A print MRF372
Contextual Info: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372R3 MRF372R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

marking c14a

Abstract: ATC - Semiconductor Devices transistor j239 04 6274 045 000 800
Contextual Info: MRF374A Rev. 4, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

transmitter 446 mhz

Abstract: R5B transistor J960 470-860 mhz Power amplifier w
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device

MRF374A

Abstract: marking c14a l1a marking
Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

RO3010

Abstract: RF POWER VERTICAL MOSFET
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

RO30

Abstract: mrf374
Contextual Info: Freescale Semiconductor Technical Data MRF374A Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

transistor R1A 37

Abstract: 5233 mosfet J146 VJ1210y
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

transistor BD 135

Abstract: diode rN 4007 bc337 transistor linear amplifier 470-860 transistor BC337
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Linear Power Transistor . . . designed for output stages in Band IV & V TV transmitter amplifiers. Internal matching of both input and output along with use of a push-pull package configuration aids broadband amplifier designs.

RO3010

Abstract: j352 transistor j352 bc17a VJ2225Y
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

RO3010

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

R10B

Contextual Info: Freescale Semiconductor Technical Data MRF372 Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

R4A marking

Contextual Info: Freescale Semiconductor Technical Data MRF372 Rev. 8, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF372 MRF372R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this