TRANSISTOR QY Search Results

transistor equivalent table 557

Abstract: 21045F
Contextual Info: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication

Contextual Info: FF 300 R 06 KF 2 Therm ische Eigenschaften Therm al properties 0,05 DC, pro Baustein / per module 0,10 DC, pro Zweig / per arm pro Baustein / per module 0,03 RthCK 0,06 pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften Electrical properties

J148G

Abstract: J148 MJD148 MJD148T4 MJD148T4G mjd1 NPN Silicon Power Transistor DPAK
Contextual Info: MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com POWER TRANSISTOR 4.0 AMPERES 45 VOLTS, 20 WATTS Features • High Gain − 50 Min @ IC = 2.0 A

J148G

Abstract: j148 NPN Silicon Power Transistor DPAK MJD148 MJD148T4 MJD148T4G MS10 marking code QV transistor
Contextual Info: MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com POWER TRANSISTOR 4.0 AMPERES 45 VOLTS, 20 WATTS Features • High Gain − 50 Min @ IC = 2.0 A

tea 1402

Abstract: TEA-1035 2SK1850 MEI-1202 2sk18 TEA-1034 TEA1035
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1850 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1850 is N-channel MOS Field Effect Transistor de­ PACKAGE DIMENSIONS in millim eters signed for solenoid, motor and lamp driver.

NTE74C923

Abstract: NTE74C922 NTE74C902 NTE74C903 NTE74C925 NTE74LS629 NTE74C901 NTE74HC4020 NTE74LS641 NTE74LS640
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74LS626 16-Lead DIP, See Diag. 249 Dual Voltage Controlled Oscillator GND Z 1 Y 1 EFJ 1 CX1 1 CX2 1 OSC v cc OSC GND g NTE74LS627 14-Lead DIP, See Dlag. 247 Dual Voltage Controlled Oscillator NTE74LS629

Contextual Info: FF 25 R 12 KF Therm ische Eigenschaften Therm al properties Rthjc DC, pro B austein/p e r module 0,25 0,5 DC, pro Zweig / per arm 0,06 RthCK pro Baustein /p e r module 0,12 Transistor Transistor Elektrische Eigenschaften Electrical properties H öchstzulässige W erte

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

motorola 304

Abstract: MRFG9801 MRFG9801R hp89 HP8970A dual-gate K31S HP11590B Eaton 2075
Contextual Info: Order this document by MRFG9801/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9801 MRFG9801R Advance Information The RF Line N-Channel Dual-Gate G a A s Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion mode dual-gate MES FET designed for high frequency amplifier

mrf226

Abstract: Allen-Bradley cb MRF-226 15MH K200 8-32NC-2 TRANSISTOR c 5568 TRANSISTOR motorola 838
Contextual Info: Order this document by MRF226/D MRF226 The RF Line 13 W — 225 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . designed fo r 12.5 V o lt large-signal power am plifier applications in com m unication equipm ent operating at 225 MHz. Ideally suited

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

b1009 transistor

Abstract: B1009 ba656 ba9700-series BA6566
Contextual Info: Regulator ICs Switching regulator for DC-DC converters BA9700A/BA9700AF/BA97OOAFV BA9700A, BA9700AF and BA9700AFV are switching regulators that use a pulse width modulation PWM system. They use a transistor switch to stabilize the output voltage. By the use of the transistor, power loss is decreased, fluctnation efficiency is improved, and the circuit is made more

1S1888X4

Contextual Info: TOSHIBA 2SD1092 TOSHIBA TRANSISTOR SILICON NPN DOUBLE DIFFUSED TYPE PCT PROCESS 2 S D 1 092 Unit in mm PO W ER REGULATOR FOR LINE OPERATED TV. 15.9 m AX. Excellent Wide Safe Operating Area. (80W*$ at Tc = 25°C) Included Avalanche Diode : V z = 5 5 ^ J qy

2SD1092

Contextual Info: TOSHIBA 2SD1092 TOSHIBA TRANSISTOR 2 S D 1 092 SILICON NPN DOUBLE DIFFUSED TYPE PCT PROCESS Unit in mm PO W ER REGULATOR FOR LINE OPERATED TV. , 2.0 Excellent Wide Safe Operating Area. (80W-S at Te = 25°C) Included Avalanche Diode : V z = 5 5 ^ | qy High DC Current Gain : hFE = 500 (Min.) (Tc = 25°C)

diode AY 101

Abstract: IPD50R520CP
Contextual Info: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V฀*EL;HI฀<?=JG;฀E<฀C;G?I฀0IH฀M฀/Y V฀3BIG7฀BEL฀=7I;฀9>7G=; V"1฀9N\_Si //* P R>M#a`$&_Si * /,*  +- `= QY&ejb V฀#MIG;C;฀:K :I฀G7I;: V฀&?=>฀F;7A฀9JGG;DI฀97F78?B?IN

diode EZD

Abstract: diode AY 101
Contextual Info: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V฀*EL;HI฀<?=JG;฀E<฀C;G?I฀0-,฀M฀/Y V฀3BIG7฀BEL฀=7I;฀9>7G=; V"1฀9N\_Si //* P R>M#a`$&_Si * -33  +1 `= QY&ejb V฀#MIG;C;฀:K :I฀G7I;: V฀&?=>฀F;7A฀9JGG;DI฀97F78?B?IN

design dielectric resonator oscillator

Abstract: wide band rf reference designs DIELECTRIC COAXIAL RESONATOR varactor diode q factor measurement J048A
Contextual Info: A COMPARISON OF MICROSTRIP & COAXIAL RESONATOR VOLTAGE CONTROLLED OSCILLATOR DESIGN APPROACHES APPLICATIONS single transistor driven into oscillation with positive feedback and frequency changed with a varactor tuned resonant circuit. The resonant element for the

MARKING W2 SOT23 TRANSISTOR

Abstract: sot23 Transistor marking p2 13000 transistor ta 8268 sot-23 transistor p2 marking 2sc2714qy 0441 3543 amplifier marking AM sot-23 MARKING W3 SOT23 TRANSISTOR
Contextual Info: 2SC2714 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER APPLICATIONS AM/FM ,RF,MIX,IF AMPLIFIER APPLICATIONS * High Current Gain Bandwidth Product fT=550MHz Package:SOT-23

1w5301

Abstract: 1n414b AN-944 1W530 high voltage gate drive transformer IC not gate data sheet DS0026 IRF130 AN944 transistor bipolar superficial
Contextual Info: Application Note AN-944 Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs Table of Contents Page 1. Input behavior of a MOS-gated transistor . 1 2. Test Circuit. 1

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC2714 Pb Small reverse transfer capacitance: Lead-free Cre=0.7pF Typ. z Low noise Figure:NF=2.5dB(Typ.) f=100MHz. APPLICATIONS z High frequency amplifier applications.

NPN Silicon Epitaxial Planar Transistor

Abstract: transistor marking PB 2SC4215W SOT323 Marking bl Audio Frequency General Purpose Amplifier sot323 transistor marking Marking qy marking BR SOT sot323 marking K MARKING K SOT323
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z 2SC4215W Pb Lead-free Power dissipation. PC=100mW APPLICATIONS z Audio frequency general purpose amplifier. SOT-323 ORDERING INFORMATION Type No. Marking Package Code

HP 2531

Abstract: HP 2531 optocoupler 2n3904 smd pin configuration HP RF TRANSISTOR GUIDE transistor rf type M 2530 gold detectors circuit HCPL-5501 TRANSISTOR SMD MARKING CODE pa optocoupler HP HCPL-653X
Contextual Info: Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-257K HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. Features • Dual Marked with Device