FT1551
Abstract: FT2551 fujitsu ring emitter
Contextual Info: FUJITSU MICROELECTRONICS 374=171=2 ODlbblD S S F I 1 I 31E D T - 33 January 1990 Edition 1.1 PRODUCT PROFILB= _ Fujrrsu FT1551 Silicon High Speed Power Transistor DESCRIPTION The FT1E51 Is a silicon NPN general purpose, medium power transistor fabricated w ith Fujitsu's unique Ring Em itter Transistor R ET technology. RE T devices ara
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37417fe2-r-33ft1551ft1e51+4ft255185mhzt-33-09fujitsu ring emitter
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70V AC to 48v dc 40 amp converter circuit diagram
Contextual Info: LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller FEATURES DESCRIPTIO U The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode
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lt3781350khz300khzlt3710+4ltc3728550khz3781f70v ac to 48v dc 40 amp converter circuit diagram
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GHM3045
Abstract: FZT690 ltc 3781 SI4450 optocoupler Iso1 BAS21 BAT54 LT3781 MMBD914LT1 MURS120T3
Contextual Info: LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller U FEATURES DESCRIPTIO The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode
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lt3781350khzltc1929300khz+13lt3710ltc3728550khz3781fghm3045fzt690ltc 3781si4450optocoupler iso1bas21bat54mmbd914lt1murs120t3
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ltc 3781
Abstract: 2kw mosfet half bridge converter 2kw planar transformer theory planar transformer theory P1976 LT 450 mbr 2kw power supply C3781 WE MIDCOM 0.25w resistor 1/4
Contextual Info: Final Electrical Specifications LT3781 “Bootstrap” Start Dual Transistor Synchronous Forward Controller DESCRIPTIO The LT 3781 controller simplifies the design of high power synchronous dual transistor forward DC/DC converters. The part employs fixed frequency current mode
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lt3781350khzltc1922-1ltc1929+14300khzltc3728550khz3781iltc 37812kw mosfethalf bridge converter 2kwplanar transformer theoryplanar transformer theory p1976lt 450 mbr2kw power supplyc3781we midcom0.25w resistor 1/4
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Mitsubishi transistor
Abstract: transistor 1015 K 192 A transistor diode 210q k 1 transistor mitsubishi power Modules
Contextual Info: MITSUBISHI TRANSISTOR MODULES ! QM1000HA-24B j HIGH POWER SWITCHING USE j INSULATED TYPE { APPLICATION AC m otor controllers, UPS, CVCF, DC m otor controllers, NC equipm ent, W elders 2 - 1 90 MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES QM1000HA-24B
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qm1000ha-24b1000hmitsubishi transistortransistor 1015+4k 192 a transistordiode 210qk 1 transistormitsubishi power modules
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4 npn transistor ic 14pin
Abstract: C10535E PA103 lowest noise audio NPN transistor
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS:
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pa103pa103bpa103g14-pin+34 npn transistor ic 14pinc10535elowest noise audio npn transistor
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J493
Abstract: BLX13 philips 3h1 ic hf 3487 4312 020 36620 VHF IF 70MHz
Contextual Info: N AMER PHILIPS/DISCRETE 860 01684 DbE D • ^53=131 D O ^ S E D T ~ 3 3 ' Ì 1 . BLX13 Jl H.F./V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and A B and in f.m. transmitting appli cations in class-C with a supply voltage up to 28 V, The transistor is resistance stabilized and tested
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bs3t31blx1370mhzj493+4philips 3h1ic hf 34874312 020 36620vhf if 70mhz
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Diode marking CODE 5M
Abstract: transistor collector diode protection RADIO FREQUENCY transistor marking CODE LDTDG12GPWT1G LDTDG12GPWT3G diode 50M marking code
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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ldtdg12gpwt1g500madiode marking code 5mtransistor collector diode protection+3radio frequency transistor marking codeldtdg12gpwt3gdiode 50m marking code
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SC-75
Abstract: KN4L3M
Contextual Info: DATA SHEET SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package • Resistors built-in type 0.3 +0.1 –0 0.15 +0.1 –0.05 • Complementary to KA4xxx PACKAGE KN4xxx SC-75 (USM) 1.6 ± 0.1
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20M diode zener
Abstract: 102k1k LDTDG12GPT1G SC-89 transistor collector diode protection
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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ldtdg12gpt1g500masc-89463c-01+4463c-0220m diode zener102k1ktransistor collector diode protection
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KN4L3M
Contextual Info: DATA SHEET SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR PACKAGE DRAWING Unit: mm FEATURES 0.3 ± 0.05 • Compact package 0.1 +0.1 –0.05 • Resistors built-in type ORDERING INFORMATION 0.8 ± 0.1 1.6 ± 0.1 • Complementary to KN4xxx
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102k1k
Abstract: 20M diode zener LDTDG12GPLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)
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ldtdg12gplt1g500maot-23102k1k+120m diode zener
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SC-75
Abstract: kn4a4m KN4L3M
Contextual Info: DATA SHEET SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR ★ PACKAGE DRAWING Unit: mm FEATURES • Compact package 0.3 ± 0.05 • Resistors built-in type 0.1 +0.1 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE 3 0.8 ± 0.1 1.6 ± 0.1
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KN4A4L
Abstract: SC-75 KN4L3M
Contextual Info: DATA SHEET SILICON TRANSISTOR KN4xxx RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Compact package 0.3 +0.1 –0 • Resistors built-in type 0.15 +0.1 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE KN4xxx 3 0.8 ± 0.1 1.6 ± 0.1
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7-segment display driver
Abstract: NTE2023 700 v power transistor NTE202
Contextual Info: NTE2023 Integrated Circuit General Purpose, High Current 7–Segment Display Driver Description: The NTE2023 is a general purpose high current transistor array in a 16–Lead DIP type package comprised of seven high current silicon NPN transistor on a common monolithic substrate. It is connected
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nte2023500mw7-segment display driver700 v power transistor+1nte202
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transistor Common collector configuration
Abstract: "7 Segment Display" NTE2023 transistor Common Base connection 700 v power transistor
Contextual Info: NTE2023 Integrated Circuit General Purpose, High Current 7−Segment Display Driver Description: The NTE2023 is a general purpose high current transistor array in a 16−Lead DIP type package comprised of seven high current silicon NPN transistor on a common monolithic substrate. It is connected
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nte202316-lead500mwtransistor common collector configuration+37 segment displaytransistor common base connection700 v power transistor
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74als power consumption
Abstract: 74AS Characteristics Introduction about 74ls 74AS ALS TTL family characteristics 74LS ALS74 AN-476 C1995 DM54
Contextual Info: INTRODUCTION Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM54 74) system designers have wanted more speed less power consumption or a combination of the two attributes These requirements have spawned other logic families such as the DM54 74L (low
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74als power consumption74as characteristicsintroduction about 74ls74as+6als ttl family characteristics74lsals74an-476c1995dm54
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ALS74
Abstract: AN-476 DM74 AN476 pnp transistor 1000v SCHOTTKY DIODES CROSS REFERENCE
Contextual Info: Fairchild Semiconductor Application Note October 1986 Revised March 2003 Guide to ALS and AS Introduction Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM74), system designers have wanted more speed, less power consumption, or a combination of the two attributes. These requirements have
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dm74ldm74lsdm74san-476+5als74dm74an476pnp transistor 1000vschottky diodes cross reference
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BA6251
Abstract: BA6250 BA6250F BA6251F DIP162
Contextual Info: Standard ICs 7-channel Darlington transistor array BA6250 / BA6250F / BA6251 / BA6251F The BA6250, BA6250F, BA6251, and BA6251F are 7-channel transistor arrays particularly suitable for interfaces between a microcomputer in a VCR and the various ICs, or between one IC and another, and for low current drives
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74als power consumption
Abstract: 74AS TTL SERIES 74AS 74AS Characteristics AN-476 Complete for 74LS family 74AS SERIES pnp transistor 1000v 74AS fan-out 74ls series logic family
Contextual Info: Fairchild Semiconductor Application Note 476 March 1995 INTRODUCTION Since the introduction of the first bipolar Transistor-Transistor Logic TTL family (DM54/74), system designers have wanted more speed, less power consumption, or a combination of the two attributes. These requirements have spawned other logic families such as the DM54/
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dm54/74dm54/dm54/74ls74als power consumption+974asttl series 74as74as characteristicsan-476complete for 74ls family74as seriespnp transistor 1000v74as fan-out74ls series logic family
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NTE74LS244
Abstract: NTE74HCT244 NTE74HC259
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74199 24-Lead DIP, See Diag. 252 8-B it Bidirectional Universal Shift Register Serial Input K m ^ Serial Input J £ 2 ^ v cc Shift/Load 3 Input H Input A E QA | H QH Input B [ ^ OB | NTE74221, 16-Lead DI P, See Diag. 249
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nte7419924-leadnte7422116-lead+8nte74c221nte74ls221nte74c24020-leadnte74hc240nte74ls244nte74hct244nte74hc259
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transistor d 1556
Abstract: d 1556 transistor transistor af 126 AF279S transistor 1555 UHF pnp transistor AF279 PNP UHF transistor flE35b05 AF 279
Contextual Info: ESC D • flE35bG5 OODMO?^ 7 m S I Z G ' PNP Germanium UHF Transistor A F 279 S SIEMENS A K T I E N G E S E L L S C H A F 25C 04079 D - — fo r in p u t stages up to 9 0 0 M H z fly ' A n ' AF 279 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor is particularly
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fle35b05t0119q62701-f87y12bl+9transistor d 1556d 1556 transistortransistor af 126af279stransistor 1555uhf pnp transistoraf279pnp uhf transistoraf 279
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EC900
Abstract: BLW99 2 TMT 15-4
Contextual Info: PHILIPS IN TE RNATIONAL bSE T> 711002b m D0b3441 J 137 PHIN BLW99 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB and B operated high-power mobile transmitting equipment in the h.f. band. The transistors are resistance-stabilized and are guaranteed to withstand severe load mismatch conditions.
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ot-121blw99711gflsbec900+12 tmt 15-4
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transistor BC 247
Abstract: BC 247 b transistor
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74426 14-Lead DIP, See Diag. 247 Quad Gate w/3-State Outputs & Active High Enabling 1C r i ^ s y Q Vcc SA QB ’ Bc BD n 6Q 0 8 Q Vcc 1A Q B 4C 1Y Q B 4A 2C Q Q 4Y 2a S Q 3C 2Y Q j GND Q NTE74LS445
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nte7442614-leadnte74ls44516-lead+8nte74s47424-leadnte74s4754096-bitnte74hc57420-leadtransistor bc 247bc 247 b transistor
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