TRANSISTOR PNP ALG Search Results

TRANSISTOR PNP ALG Result Highlights (5)

Part	Manufacturer	Description	Download
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TTA004B	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N	Datasheet
2SA1943	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L)	Datasheet

TRANSISTOR PNP ALG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TPCP8F01 Contextual Info: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications ○ Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive	Original	tpcp8f01	PDF
2851 transistor npn Abstract: A1409-1 Transistor A14 2N2907 A-04 a1-4095 PNP 2N2907 Contextual Info: ALLE6R0 MICROSYSTEMS INC T3 D • D50433fl G003b47 7 ■ ALGR PROCESS BDA 9 / “0/ Process BDA PNP Small-Signal Transistor A general-purpose PNP transistor, Process BDA is used as a low-noise, high-gain amplifier and as a medium-power switcher at frequencies from dc to	OCR Scan	0s0433 ci003l -h053 2851 transistor npn +6a1409-1 transistor a14 2n2907 a-04 a1-4095 pnp 2n2907	PDF
Contextual Info: HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type PCT Process HN4B101J MOS Gate Drive Applications Switching Applications Unit: mm +0.2 2.8 -0.3 Low collector-emitter saturation: PNP VCE (sat) = −0.20 V (max) High-speed switching : PNP	Original	hn4b101j	PDF
marking 5K Abstract: HN4B101J Contextual Info: HN4B101J TOSHIBA Transistor Silicon PNP / NPN Epitaxial Type PCT Process HN4B101J MOS Gate Drive Applications Switching Applications Unit: mm +0.2 2.8 -0.3 Low collector-emitter saturation: PNP VCE (sat) = −0.20 V (max) High-speed switching : PNP	Original	hn4b101j marking 5k	PDF
Contextual Info: RN2107CT ~ RN2109CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107CT, RN2108CT, RN2109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications	Original	rn2107ct rn2109ct rn2108ct rn1107ct +1rn1109ct	PDF
Contextual Info: RN2101CT ~ RN2106CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101CT, RN2102CT, RN2103CT RN2104CT, RN2105CT, RN2106CT Switching Applications Inverter Circuit Applications Interface Circuit Applications	Original	rn2101ct rn2106ct rn2102ct rn2103ct +4rn2104ct rn2105ct rn1101ct rn1106ct	PDF
RN1110ACT Abstract: RN1111ACT RN2110ACT RN2111ACT Contextual Info: RN2110ACT,RN2111ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110ACT,RN2111ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm	Original	rn2110act rn2111act rn1110act rn1111act	PDF
Contextual Info: RN2110CT,RN2111CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110CT, RN2111CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02	Original	rn2110ct rn2111ct rn1110ct rn1111ct	PDF
Contextual Info: RN1110CT, RN1111CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110CT, RN1111CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02	Original	rn1110ct rn1111ct rn2110ct rn2111ct	PDF
RN2112ACT Abstract: RN2113ACT Contextual Info: RN2112ACT,RN2113ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112ACT,RN2113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm	Original	rn2112act rn2113act rn1112ct rn1113ct	PDF
RN1101ACT Abstract: RN1106ACT RN2101ACT RN2102ACT RN2103ACT RN2104ACT RN2105ACT RN2106ACT 1D43 Contextual Info: RN2101ACT ~ RN2106ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101ACT,RN2102ACT,RN2103ACT RN2104ACT,RN2105ACT,RN2106ACT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Original	rn2101act rn2106act rn2102act rn2103act +5rn2104act rn2105act rn1101act rn1106act 1d43	PDF
Contextual Info: RN2112ACT,RN2113ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112ACT, RN2113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm	Original	rn2112act rn2113act rn1112ct rn1113ct	PDF
Contextual Info: RN2110ACT,RN2111ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110ACT,RN2111ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm	Original	rn2110act rn2111act rn1110act rn1111act	PDF
Contextual Info: RN2101ACT ~ RN2106ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101ACT, RN2102ACT, RN2103ACT RN2104ACT, RN2105ACT, RN2106ACT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Original	rn2101act rn2106act rn2102act rn2103act +4rn2104act rn2105act rn1101act rn1106act	PDF

Contextual Info: RN2112ACT,RN2113ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112ACT,RN2113ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • •	Original	rn2112act rn2113act rn1112ct rn1113ct	PDF
Contextual Info: RN1110CT, RN1111CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110CT,RN1111CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02	Original	rn1110ct rn1111ct rn2110ct rn2111ct	PDF
Contextual Info: RN2110ACT,RN2111ACT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2110ACT, RN2111ACT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm	Original	rn2110act rn2111act rn1110act rn1111act	PDF
Contextual Info: RN2112CT,RN2113CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112CT, RN2113CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.65±0.02	Original	rn2112ct rn2113ct rn1112ct rn1113ct	PDF
RN1901AFS Abstract: RN2901AFS RN2902AFS RN2903AFS RN2904AFS RN2905AFS RN2906AFS Contextual Info: RN2901AFS~RN2906AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Transistor with Built-in Bias Resistor) RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN2906AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Original	rn2901afs rn2906afs rn2902afs rn2903afs +3rn2904afs rn2905afs rn1901afs	PDF
B 773 transistor Abstract: 2N4403 Contextual Info: ß. ' •- ALLE6R0 MICROSYSTEMS INC T3 D • QS0433ß QQQ3b71 4 ■ AL6R T -9 1-0 1 PROCESS ODA Process DDA PNP Small-Signal Transistor Process DDA is a double-diffused epitaxial planar silicon PNP transistor. It is designed for use as a lownoise, high-gain amplifier or as a medium-power	OCR Scan	50433a t-91-01 g50433 g003b72 +3-al77 b 773 transistor 2n4403	PDF
Contextual Info: RN2107CT ~ RN2109CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2107CT,RN2108CT,RN2109CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm	Original	rn2107ct rn2109ct rn2108ct rn1107ct +1rn1109ct	PDF
RN1901AFS Abstract: RN1906AFS RN2901AFS RN2902AFS RN2903AFS RN2904AFS RN2905AFS RN2906AFS marking D5 TOSHIBA Contextual Info: RN2901AFS~RN2906AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Transistor with Built-in Bias Resistor) RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN2906AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Original	rn2901afs rn2906afs rn2902afs rn2903afs +5rn2904afs rn2905afs rn1901afs rn1906afs marking d5 toshiba	PDF
Contextual Info: RN2901AFS~RN2906AFS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Transistor with Built-in Bias Resistor) RN2901AFS, RN2902AFS, RN2903AFS RN2904AFS, RN2905AFS, RN2906AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Original	rn2901afs rn2906afs rn2902afs rn2903afs +4rn2904afs rn2905afs rn1901afs rn1906afs	PDF
Contextual Info: RN1110CT, RN1111CT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110CT,RN1111CT Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications • Unit: mm	Original	rn1110ct rn1111ct rn2110ct rn2111ct	PDF

TRANSISTOR PNP ALG Search Results

TRANSISTOR PNP ALG Result Highlights (5)

TRANSISTOR PNP ALG Datasheets Context Search

TPCP8F01

2851 transistor npn

marking 5K

RN1110ACT

RN2112ACT

RN1101ACT

RN1901AFS

B 773 transistor

RN1901AFS