TRANSISTOR PNP 1A Search Results

Contextual Info: UTC TIP32C PNP EXPITAXIAL PLANAR TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP32C is a PNP expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 FEATURE *Complement to tip31C TO-220

TIP32C

Contextual Info: UTC TIP32C PNP EXPITAXIAL PLANAR TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP32C is a PNP expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 FEATURE *Complement to tip31C TO-220

Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD TIP32C PNP SILICON TRANSISTOR PNP EXPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC TIP32C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. „ FEATURES * Complement to TIP31C

Contextual Info: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V, Ic = -1A *Good hFE linearity.

transistor 1012 TO252

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. „ FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.

Contextual Info: UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 FEATURES *High breakdown voltage : BVCEO= -80V *Low VCE sat : VCE(sat)= -0.2V (Typ) (Ic/IB = -0.5A/-50mA)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.

Contextual Info: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MP2510 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP TRANSISTOR  DESCRIPTION The UTC MP2510 is a PNP transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc.

Contextual Info: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BD238 PNP EPITAXIAL SILICON TRANSISTOR -80V, PNP TRANSISTOR  DESCRIPTION The UTC BD238 is a PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc.

akr sot-23

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR „ 3 DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 SOT-23 „ FEATURES * High breakdown voltage : BVCEO= -80V * Low VCE sat : VCE(sat)= -0.2V (Typ)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)

2sa1020

Abstract: 2SA1020L 2SA1020L UTC 2sc2655 sot-23 2sc2655 SOT89 transistor 2SA1020 2SA1020G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. „ FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)

TS16949

Abstract: ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA 2V150
Contextual Info: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2855 Preliminary PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR „ DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it

MMBT589

Contextual Info: MMBT589 -1A , -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High current surface mount PNP silicon switching transistor for Load management in portable applications

2N2955

Abstract: 2N295 "PNP Transistor" 2n2955 2n2955 Power Transistor PNP
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N2955 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS „ DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.

4420 Transistor

Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

2SA1020

Abstract: 2SC2655 2sc2655 SOT
Contextual Info: UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and 1 power switching applications. FEATURES *Low collector saturation voltage: VCE sat =-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.)

ZXTP19060CG

Abstract: TS16949 ZXTN19060CG ZXTP19060CGTA
Contextual Info: ZXTP19060CG 60V PNP medium transistor in SOT223 Summary BVCEO > -60V BVECO > -7V IC cont = 5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 3.0W Complementary part number ZXTN19060CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor

PNP TRANSISTOR "SOT89"

Abstract: SOT-89 TRANSISTOR PNP PNP TRANSISTOR SOT89 transistor PNP 5 w
Contextual Info: PNP ᒦ৖ൈहࡍྯ૵਌ PNP Medium Power Transistor PNP Medium Power Transistor FHFCX593 PNP ᒦ৖ൈहࡍྯ૵਌ DESCRIPTION & FEATURES 概述及特點 Medium Power Amplifier 中等功率放大 Complement to FHFCX493 SOT-89 PIN ASSIGNMENT 引腳說明

ZXTN19020DZ

Abstract: ZXTP19020DZ ZXTP19020DZTA TS16949
Contextual Info: ZXTP19020DZ 20V PNP high gain transistor in SOT89 Summary BVCEO > -20V BVECO > -4V IC cont = 6A VCE(sat) < -47mV @ -1A RCE(sat) = 28m⍀ PD = 2.4W Complementary part number ZXTN19020DZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor

ZXTP19100CG

Abstract: ZXTP19100C TS16949 ZXTN19100CG ZXTP19100CGTA 30W dc motor current driver
Contextual Info: ZXTP19100CG 100V PNP medium transistor in SOT223 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 3.0W Complementary part number ZXTN19100CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor