TRANSISTOR PC 135 Search Results

NC4D-JP-DC12V

Abstract: NC2D-JP-DC48V
Contextual Info: NC Transistor drive 2c/4c 5A slim power relays NC4 Flat type PC board type NC2 Flat type (PC board type) NC4 Slim type (Plug-in type) NC2 Slim type (PC board type) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat

E43028

Abstract: NC2EBD-DC12V NC2D-JP-DC48V NC2-PS DC 3V relay 0.5A 220v ac DC 5V to DC 100V CIRCUIT DIAGRAM NC4D-JP-DC12V NC2EBD-DC24V NC2D-JP-DC12V NC2D-JP-DC24V
Contextual Info: NC Transistor drive 2c/4c 5A slim power relays NC4 Flat type PC board type NC2 Flat type (PC board type) NC4 Slim type (Plug-in type) NC2 Slim type (PC board type) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat

NC2D-P-AC12V

Abstract: NC4D-P-AC100V NC2EBD-DC24V NC2D-P-AC NC2D-AC100V NC4D-JP-AC100V nc2d-p-ac24v NC2D-JP-AC100V NC2D-JP-DC24V 680mh
Contextual Info: NC Transistor drive 2c/4c 5A slim power relays NC4 Flat type PC board type NC2 Flat type (PC board type) NC4 Slim type (Plug-in type) NC2 Slim type (PC board type) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat

Contextual Info: Automation Controls Catalog Transistor drive 2c/4c 5A slim power relays NC4 Flat type PC board type NC2 Flat type (PC board type) NC4 Slim type (Plug-in type) NC2 Slim type (PC board type) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat

Contextual Info: Automation Controls Catalog Transistor drive 2c/4c 5A slim power relays NC4 Flat type PC board type NC2 Flat type (PC board type) NC4 Slim type (Plug-in type) NC2 Slim type (PC board type) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat

Contextual Info: MMBT5401LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Package:SOT-23 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= -150V ABSOLUTE MAXIMUM RATINGS at Ta=25℃

transistor 25

Abstract: transistor mmbt5551lt1
Contextual Info: MMBT5551LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector Dissipation: Pc=225mW Ta=25℃ * Collector-Emitter Voltage :Vceo=160V ABSOLUTE MAXIMUM RATINGS at Ta=25℃

SILICON PNP POWER TRANSISTOR

Abstract: y135
Contextual Info: KSB798 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-89 • Collector Current: IC = -1A • Collector Dissipation: PC = 2W ABSOLUTE MAXIMUM RATING TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC (DC) IC (Pulse) PC TJ T STG Collector-Base Voltage

KSP24

Contextual Info: KSP24 KSP24 VHF Transistor TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO IEBO IC PC Parameter Value 40 Units V Collector-Emitter Voltage

KSP24

Contextual Info: KSP24 KSP24 VHF Transistor TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO IEBO IC PC Parameter Value 40 Units V Collector-Emitter Voltage

Contextual Info: KSP24 KSP24 VHF Transistor TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage VCEO IEBO IC PC Parameter Value 40 Units V Collector-Emitter Voltage

KST1623L7

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 40 5.0 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage

KST812M6 transistor

Abstract: KST812M6
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit -50 -40 -5 -100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1009F1/F2/F3/F4/F5 AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 25 5 50 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage

NPN Silicon Epitaxial Planar Transistor

Abstract: transistor marking PB 2SC4215W SOT323 Marking bl Audio Frequency General Purpose Amplifier sot323 transistor marking Marking qy marking BR SOT sot323 marking K MARKING K SOT323
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z 2SC4215W Pb Lead-free Power dissipation. PC=100mW APPLICATIONS z Audio frequency general purpose amplifier. SOT-323 ORDERING INFORMATION Type No. Marking Package Code

Contextual Info: KSB798 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-89 • Collector Current lc=-1A • Collector Dissipation Pc=2W ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

NTE14

Abstract: "PNP Transistor" TRANSISTOR pc 135
Contextual Info: NTE14 Silicon PNP Transistor High Power, Low Frequency Driver Features: D High Power Compact FTR Package: PC = 750mW D High Breakdown Voltage: VCEO = 80V Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V

SOT-323 marking L6

Abstract: l4 transistor SOT-323 marking .L6 2SC1623W transistor marking L6 L6 TRANSISTOR NPN Silicon Epitaxial Planar Transistor marking L6 npn
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High DC current gain: hFE=200TYP. z High voltage: VCEO=50V. z Power dissipation. PC=200mW 2SC1623W Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier.

STO-23

Abstract: KSA812 KSC1623
Contextual Info: KSC1623 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY OSC STO-23 • Complement to KSA812 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

KSB798

Contextual Info: KSB798 KSB798 Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Dissipation : PC = 2W SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO

TPCA8018-H

Abstract: 8018-H
Contextual Info: TPCA8018-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8018-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications High-speed switching • Small gate charge: QSW = 9.3 nC (typ.)

FPN630

Abstract: FPN630A PN2222N CBVK741B019 F63TNR TO-226-AE D26Z weig S0480 226AE
Contextual Info: FPN630 / FPN630A FPN630 FPN630A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PC. Absolute Maximum Ratings* Symbol

Contextual Info: KSB798 KSB798 Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol

BYD 24

Contextual Info: TOSHIBA TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 INDUSTRIAL APPLICATIONS LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : Rd S (ON) - lOOmO (Typ.)