TRANSISTOR PC 135 Search Results

NC2D-P-AC12V

Abstract: NC4D-P-AC100V NC2EBD-DC24V NC2D-P-AC NC2D-AC100V NC4D-JP-AC100V nc2d-p-ac24v NC2D-JP-AC100V NC2D-JP-DC24V 680mh
Contextual Info: NC Transistor drive 2c/4c 5A slim power relays NC4 Flat type PC board type NC2 Flat type (PC board type) NC4 Slim type (Plug-in type) NC2 Slim type (PC board type) NC RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact, slim design Use of high-performance flat

Contextual Info: MMBT5401LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Package:SOT-23 * Collector Dissipation: Pc=225mW * Collector-Emitter Voltage :Vceo= -150V ABSOLUTE MAXIMUM RATINGS at Ta=25℃

transistor 25

Abstract: transistor mmbt5551lt1
Contextual Info: MMBT5551LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector Dissipation: Pc=225mW Ta=25℃ * Collector-Emitter Voltage :Vceo=160V ABSOLUTE MAXIMUM RATINGS at Ta=25℃

SILICON PNP POWER TRANSISTOR

Abstract: y135
Contextual Info: KSB798 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-89 • Collector Current: IC = -1A • Collector Dissipation: PC = 2W ABSOLUTE MAXIMUM RATING TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC (DC) IC (Pulse) PC TJ T STG Collector-Base Voltage

KST1623L7

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 50 40 5.0 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage

KST812M6 transistor

Abstract: KST812M6
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit -50 -40 -5 -100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: KSB798 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-89 • Collector Current lc=-1A • Collector Dissipation Pc=2W ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

NTE14

Abstract: "PNP Transistor" TRANSISTOR pc 135
Contextual Info: NTE14 Silicon PNP Transistor High Power, Low Frequency Driver Features: D High Power Compact FTR Package: PC = 750mW D High Breakdown Voltage: VCEO = 80V Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V

STO-23

Abstract: KSA812 KSC1623
Contextual Info: KSC1623 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY OSC STO-23 • Complement to KSA812 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

TPCA8018-H

Abstract: 8018-H
Contextual Info: TPCA8018-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8018-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications High-speed switching • Small gate charge: QSW = 9.3 nC (typ.)

FPN630

Abstract: FPN630A PN2222N CBVK741B019 F63TNR TO-226-AE D26Z weig S0480 226AE
Contextual Info: FPN630 / FPN630A FPN630 FPN630A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PC. Absolute Maximum Ratings* Symbol

Contextual Info: KSB798 KSB798 Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol

BYD 24

Contextual Info: TOSHIBA TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 INDUSTRIAL APPLICATIONS LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : Rd S (ON) - lOOmO (Typ.)

KSB798

Contextual Info: KSB798 KSB798 Audio Frequency Power Amplifier • Collector Current : IC = -1A • Collector Power Dissipation : PC = 2W SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol

TPCA8042

Contextual Info: TPCA8042 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅣ TPCA8042 Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm 1.27 0.4 ± 0.1 Low drain-source ON-resistance: RDS (ON) = 2.6 mΩ (typ.)

TPCA 8019

Abstract: TPCA8019-H tpca8019 TPCA*8019 8019H tpca8019h 8019 H TRANSISTOR 8019
Contextual Info: TPCA8019-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8019-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 • High-speed switching •

Contextual Info: TOSHIBA TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : Rd S (ON) - lOOmO (Typ.)

TPCA 8019

Abstract: TPCA8019-H TPCA*8019 8019H TPCA*8019 h 8019 H
Contextual Info: TPCA8019-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8019-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications High-speed switching • Small gate charge: QSW = 15.5 nC (typ.)

KSA812

Contextual Info: KSA812 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER SOT-23 • Complement to KSC1623 • Collector-Base Voltage: VCBO= -60V ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ T STG Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: TPCM8002-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCM8002-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package • High-speed switching

transistor TO-92 SS8050

Contextual Info: SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. TO-92 • Complimentary to SS8550 • Collector Current: IC=1.5A • Collector Dissipation: PC=2W TC=25°C ABSOLUTE MAXIMUM RATINGS (TA=25°°C)

V30010

Abstract: 20W power transistor
Contextual Info: TOSHIBA 2SD1221 ^Transistor Silicon NPN Triple Diffused Type PCT Process Audio Frequency Power Amplifier Applications F e a tu re s • Low Collector Saturation Voltage - ^CE (Satj = 0.4V (Typ.) (Iq = 3A, lB = 0.3A) • High Power Dissipation - Pc = 20W (Tc = 25~C )

Contextual Info: TO SHIBA TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL M05 TYPE L2- tt-MOSVI TPf«ift7 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : R d S (ON)= lOOmO (Typ.)

TPC8032

Abstract: TPC8032-H
Contextual Info: TPC8032-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPC8032-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High-speed switching