TRANSISTOR PARAMETERS Search Results
TRANSISTOR PARAMETERS Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 |
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BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| 93L422ADM/B |
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93L422A - 256 x 4 TTL SRAM |
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| 93425ADM/B |
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93425 - 1K X 1 TTL SRAM |
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TRANSISTOR PARAMETERS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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DUAL TRANSISTORContextual Info: UNISONIC TECHNOLOGIES CO., LTD UMZ1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR DESCRIPTION The UTC UMZ1N is a dual transistor, including an NPN transistor and a PNP transistor. It uses UTC’s advanced technology to provide customers with high DC current gain, etc. |
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OT-363 QW-R218-024 DUAL TRANSISTOR | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD2H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS DESCRIPTION The UTC UD2H are Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate interference. |
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OT-26 QW-R218-018 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD3H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS DESCRIPTION 6 The UTC UD3H is Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate, interference. |
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OT-26 QW-R218-020 | |
free IC npn transistorContextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are |
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MMDT8050S MMDT8050S MMDT8050SL-AL6-R MMDT8050SG-AL6-R OT-363 2012ues QW-R218-012 free IC npn transistor | |
n24 transistorContextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are |
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MMDT8050S MMDT8050S MMDT8050SL-AL6-R MMDT8050SG-AL6-R OT-363 MMDT8050SL-AL6-R QW-R218-012 n24 transistor | |
transistor sc 308
Abstract: DTA143EE SMD310
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DTA143EE DTA143EE 416/SC r14525 DTA143EE/D transistor sc 308 SMD310 | |
DTC114TE
Abstract: SMD310 motorola DTC114TE
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DTC114TE/D DTC114TE 416/SC DTC114TE/D* DTC114TE SMD310 motorola DTC114TE | |
transistor sc 308
Abstract: DTC114TE SMD310
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DTC114TE DTC114TE 416/SC r14525 DTC114TE/D transistor sc 308 SMD310 | |
DTC114YE
Abstract: SMD310 motorola DTC114YE
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DTC114YE/D DTC114YE 416/SC DTC114YE/D* DTC114YE SMD310 motorola DTC114YE | |
DTA143EE
Abstract: SMD310 43 DTA143EE
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DTA143EE/D DTA143EE 416/SC DTA143EE/D* DTA143EE SMD310 43 DTA143EE | |
PA1476
Abstract: transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134
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PA1476 PA1476 PA1476H transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134 | |
DTA114YE
Abstract: SMD310
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DTA114YE/D DTA114YE 416/SC DTA114YE/D* DTA114YE SMD310 | |
FC155Contextual Info: Ordering number:EN5063 FC155 PNP Epitaxial Planar Silicon Transistor With bias resistances PNP Epitaxail Planar Silicon Transistor Constant-Current Circuit Applications Features Package Dimensions • Complex type of 2 devices (transistor with resistances and low saturation transistor) contained in one |
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EN5063 FC155 FC155] FC155 | |
DSA00897Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are |
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MMDT8150 MMDT8150 MMDT8150L-AL6-R MMDT8150G-AL6-R OT-363 QW-R218-017 DSA00897 | |
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IC-6634
Abstract: PA1478 MEI-1202 MF-1134 IEI-1213 2di50 DARLINGTON TRANSISTOR ARRAY
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PA1478 PA1478 PA1478H IC-6634 MEI-1202 MF-1134 IEI-1213 2di50 DARLINGTON TRANSISTOR ARRAY | |
transistor sc 308
Abstract: DTA114YE SMD310
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DTA114YE DTA114YE 416/SC r14525 DTA114YE/D transistor sc 308 SMD310 | |
pin configuration transistor 2n4403
Abstract: 2N4403 NATIONAL SEMICONDUCTOR 2N4401 NATIONAL SEMICONDUCTOR 2N4403 2N4403-BULK 2N4403-TAP MMBT4403 2N4401 SOT-23 2N4403
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2N4403 2N4401 OT-23 MMBT4403. 2N4403-BUs D-74025 01-Sep-04 pin configuration transistor 2n4403 2N4403 NATIONAL SEMICONDUCTOR 2N4401 NATIONAL SEMICONDUCTOR 2N4403 2N4403-BULK 2N4403-TAP MMBT4403 SOT-23 2N4403 | |
2N4401 NATIONAL SEMICONDUCTOR
Abstract: pin configuration transistor 2n4401 2N4401 2N4401 transistor 2N4401-BULK 2N4401-TAP 2N4403 MMBT4401 2N4401 NPN Switching Transistor 2n4401 configuration
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2N4401 2N4403 OT-23 MMBT4401, 2N4401-BULK D-74025 01-Sep-04 2N4401 NATIONAL SEMICONDUCTOR pin configuration transistor 2n4401 2N4401 2N4401 transistor 2N4401-TAP MMBT4401 2N4401 NPN Switching Transistor 2n4401 configuration | |
pin configuration NPN transistor 2n3906
Abstract: 2N3906 transistor 2N3906 2N3906-BULK 2N3906BU 2N3906 APPLICATION 2n3906 hie 2N3904 2N3906-TAP MMBT3906
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2N3906 2N3904 OT-23 MMBT3906. 2N3906-BULK D-74025 01-Sep-04 pin configuration NPN transistor 2n3906 2N3906 transistor 2N3906 2N3906BU 2N3906 APPLICATION 2n3906 hie 2N3906-TAP MMBT3906 | |
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Contextual Info: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BULD128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . ORDER CODES : BULD128DA-1 AND BULD128DB-1 . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS |
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BULD128D-1 BULD128DA-1 BULD128DB-1 | |
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Contextual Info: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to |
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NSM11156DW6T1G NSM11156DW6T1G SC-88/SOT-363 NSM11156DW6/D | |
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Contextual Info: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to |
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NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D | |
N5 npn transistor
Abstract: N5 transistor SC-88 419B-02 NSM46211DW6T1G NSM46211DW6
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NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D N5 npn transistor N5 transistor SC-88 419B-02 NSM46211DW6 | |
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Contextual Info: ST13007 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . . . . IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS |
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ST13007 | |