Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR PARAMETERS Search Results

    TRANSISTOR PARAMETERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy

    TRANSISTOR PARAMETERS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DUAL TRANSISTOR

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UMZ1N Preliminary DUAL TRANSISTOR GENERAL PURPOSE TRANSISTOR  DESCRIPTION The UTC UMZ1N is a dual transistor, including an NPN transistor and a PNP transistor. It uses UTC’s advanced technology to provide customers with high DC current gain, etc.


    Original
    OT-363 QW-R218-024 DUAL TRANSISTOR PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD2H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS „ DESCRIPTION The UTC UD2H are Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate interference.


    Original
    OT-26 QW-R218-018 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD3H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS „ DESCRIPTION 6 The UTC UD3H is Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate, interference.


    Original
    OT-26 QW-R218-020 PDF

    free IC npn transistor

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are


    Original
    MMDT8050S MMDT8050S MMDT8050SL-AL6-R MMDT8050SG-AL6-R OT-363 2012ues QW-R218-012 free IC npn transistor PDF

    n24 transistor

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION „ The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE sat performance, and the transistor elements are


    Original
    MMDT8050S MMDT8050S MMDT8050SL-AL6-R MMDT8050SG-AL6-R OT-363 MMDT8050SL-AL6-R QW-R218-012 n24 transistor PDF

    transistor sc 308

    Abstract: DTA143EE SMD310
    Contextual Info: DTA143EE Product Preview Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original
    DTA143EE DTA143EE 416/SC r14525 DTA143EE/D transistor sc 308 SMD310 PDF

    DTC114TE

    Abstract: SMD310 motorola DTC114TE
    Contextual Info: MOTOROLA Order this document by DTC114TE/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a


    Original
    DTC114TE/D DTC114TE 416/SC DTC114TE/D* DTC114TE SMD310 motorola DTC114TE PDF

    transistor sc 308

    Abstract: DTC114TE SMD310
    Contextual Info: DTC114TE Product Preview Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original
    DTC114TE DTC114TE 416/SC r14525 DTC114TE/D transistor sc 308 SMD310 PDF

    DTC114YE

    Abstract: SMD310 motorola DTC114YE
    Contextual Info: MOTOROLA Order this document by DTC114YE/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114YE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a


    Original
    DTC114YE/D DTC114YE 416/SC DTC114YE/D* DTC114YE SMD310 motorola DTC114YE PDF

    DTA143EE

    Abstract: SMD310 43 DTA143EE
    Contextual Info: MOTOROLA Order this document by DTA143EE/D SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original
    DTA143EE/D DTA143EE 416/SC DTA143EE/D* DTA143EE SMD310 43 DTA143EE PDF

    PA1476

    Abstract: transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134
    Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1476 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1476 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed


    Original
    PA1476 PA1476 PA1476H transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134 PDF

    DTA114YE

    Abstract: SMD310
    Contextual Info: MOTOROLA Order this document by DTA114YE/D SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original
    DTA114YE/D DTA114YE 416/SC DTA114YE/D* DTA114YE SMD310 PDF

    FC155

    Contextual Info: Ordering number:EN5063 FC155 PNP Epitaxial Planar Silicon Transistor With bias resistances PNP Epitaxail Planar Silicon Transistor Constant-Current Circuit Applications Features Package Dimensions • Complex type of 2 devices (transistor with resistances and low saturation transistor) contained in one


    Original
    EN5063 FC155 FC155] FC155 PDF

    DSA00897

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMDT8150 Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION „ The UTC MMDT8150 is a Dual NPN epitaxial planar transistor. It has low VCE SAT performance and the transistor elements are


    Original
    MMDT8150 MMDT8150 MMDT8150L-AL6-R MMDT8150G-AL6-R OT-363 QW-R218-017 DSA00897 PDF

    IC-6634

    Abstract: PA1478 MEI-1202 MF-1134 IEI-1213 2di50 DARLINGTON TRANSISTOR ARRAY
    Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1478 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1478 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and


    Original
    PA1478 PA1478 PA1478H IC-6634 MEI-1202 MF-1134 IEI-1213 2di50 DARLINGTON TRANSISTOR ARRAY PDF

    transistor sc 308

    Abstract: DTA114YE SMD310
    Contextual Info: ON Semiconductort DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 1 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original
    DTA114YE DTA114YE 416/SC r14525 DTA114YE/D transistor sc 308 SMD310 PDF

    pin configuration transistor 2n4403

    Abstract: 2N4403 NATIONAL SEMICONDUCTOR 2N4401 NATIONAL SEMICONDUCTOR 2N4403 2N4403-BULK 2N4403-TAP MMBT4403 2N4401 SOT-23 2N4403
    Contextual Info: 2N4403 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor 2N4401 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


    Original
    2N4403 2N4401 OT-23 MMBT4403. 2N4403-BUs D-74025 01-Sep-04 pin configuration transistor 2n4403 2N4403 NATIONAL SEMICONDUCTOR 2N4401 NATIONAL SEMICONDUCTOR 2N4403 2N4403-BULK 2N4403-TAP MMBT4403 SOT-23 2N4403 PDF

    2N4401 NATIONAL SEMICONDUCTOR

    Abstract: pin configuration transistor 2n4401 2N4401 2N4401 transistor 2N4401-BULK 2N4401-TAP 2N4403 MMBT4401 2N4401 NPN Switching Transistor 2n4401 configuration
    Contextual Info: 2N4401 VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Transistor for switching and amplifier applications. • As complementary type, the PNP transistor 2N4403 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


    Original
    2N4401 2N4403 OT-23 MMBT4401, 2N4401-BULK D-74025 01-Sep-04 2N4401 NATIONAL SEMICONDUCTOR pin configuration transistor 2n4401 2N4401 2N4401 transistor 2N4401-TAP MMBT4401 2N4401 NPN Switching Transistor 2n4401 configuration PDF

    pin configuration NPN transistor 2n3906

    Abstract: 2N3906 transistor 2N3906 2N3906-BULK 2N3906BU 2N3906 APPLICATION 2n3906 hie 2N3904 2N3906-TAP MMBT3906
    Contextual Info: 2N3906 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor switching and amplifier applications. • As complementary type, the NPN transistor 2N3904 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18.


    Original
    2N3906 2N3904 OT-23 MMBT3906. 2N3906-BULK D-74025 01-Sep-04 pin configuration NPN transistor 2n3906 2N3906 transistor 2N3906 2N3906BU 2N3906 APPLICATION 2n3906 hie 2N3906-TAP MMBT3906 PDF

    Contextual Info: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BULD128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . ORDER CODES : BULD128DA-1 AND BULD128DB-1 . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS


    OCR Scan
    BULD128D-1 BULD128DA-1 BULD128DB-1 PDF

    Contextual Info: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to


    Original
    NSM11156DW6T1G NSM11156DW6T1G SC-88/SOT-363 NSM11156DW6/D PDF

    Contextual Info: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to


    Original
    NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D PDF

    N5 npn transistor

    Abstract: N5 transistor SC-88 419B-02 NSM46211DW6T1G NSM46211DW6
    Contextual Info: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to


    Original
    NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D N5 npn transistor N5 transistor SC-88 419B-02 NSM46211DW6 PDF

    Contextual Info: ST13007 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . . . . IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS


    OCR Scan
    ST13007 PDF