TRANSISTOR PACKAGE PIN DIAGRAM Search Results

4 npn transistor ic 14pin

Abstract: 8 npn transistor ic 14pin C10535E UPA102G
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package

4 npn transistor ic 14pin

Abstract: MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA101B: Superior thermal dissipation due to studded 14-pin ceramic package

UPA102G

Abstract: transistor PACKAGE PIN DIAGRAM
Contextual Info: UPA102B UPA102G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM • TW O BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hFE LINEARITY • TW O PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded 14-pin ceram ic package

SS TRANSISTOR

Contextual Info: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features 8-Pin SOP • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small

Contextual Info: RN1973 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1973 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (6-pin) package

Contextual Info: RN1973 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1973 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (6-pin) package

RN1973

Contextual Info: RN1973 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1973 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (6-pin) package

4 npn transistor ic 14pin

Abstract: C10535E PA103 lowest noise audio NPN transistor
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS:

Transistor Array differential amplifier

Abstract: transistor array high speed G141C UPA102G
Contextual Info: UPA102B UPA102G TRANSISTOR ARRAY FEATURES_ • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: 9 GHz Single Transistors • OUTSTANDING hre LINEARITY • TWO PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded 14-pin ceramic package

RN1673

Contextual Info: RN1673 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1673 Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm • Two devices are incorporated into a Super-Mini (6 pin) package

RN1972FS

Abstract: RN1973FS RN2972FS RN2973FS 1FS6
Contextual Info: RN1972FS,RN1973FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1972FS,RN1973FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into a fine pitch small mold (6-pin) package

STC403

Abstract: AUK Transistor transistor stc403
Contextual Info: STC403 NPN Silicon Transistor Features • Power Transistor General Purpose application • Low saturation voltage : VCE SAT =0.4V Typ. • High Voltage : VCEO=60V Min. PIN Connection 1 2 3 TO-220F-3L Ordering Information Type NO. Marking Package Code STC403

Contextual Info: RN1972FS,RN1973FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1972FS,RN1973FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Two devices are incorporated into a fine pitch small mold (6-pin) package

Contextual Info: STC403 NPN Silicon Transistor Features • Power Transistor General Purpose application • Low saturation voltage : VCE SAT =0.4V Typ. • High Voltage : VCEO=60V Min. PIN Connection 1 2 3 TO-220F-3L Ordering Information Type NO. Marking Package Code STC403

JANTXV4N24U

Abstract: JANTX4N22U JANTX4N24U 4N22U 4N23U 4N24U JAN4N22U JAN4N23U JAN4N24U
Contextual Info: 4N22U 4N23U 4N24U 6 PIN LCC OPTOCOUPLERS OPTOELECTRONIC PRODUCTS DIVISION 05/29/03 Features: • MIL-PRF-19500/486 Qualified • Base lead provided for conventional transistor biasing • High gain, high voltage transistor • Miniature package saves circuit board area

Contextual Info: RN1673 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1673 Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm • Two devices are incorporated into a Super-Mini (6 pin) package

Contextual Info: RN47A1 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A1 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package.

Contextual Info: 4N22U 4N23U 4N24U 6 PIN LCC OPTOCOUPLERS OPTOELECTRONIC PRODUCTS DIVISION 05/29/03 Features: • MIL-PRF-19500/486 Qualified • Base lead provided for conventional transistor biasing • High gain, high voltage transistor • Miniature package saves circuit board area

JANTX4N24U

Abstract: JANTXV4N24U 4N22U 4N23U 4N24U JAN4N22U JAN4N23U JAN4N24U JANTX4N22U
Contextual Info: 4N22U 4N23U 4N24U 6 PIN LCC OPTOCOUPLERS OPTOELECTRONIC PRODUCTS DIVISION 05/29/03 Features: • MIL-PRF-19500/486 Qualified • Base lead provided for conventional transistor biasing • High gain, high voltage transistor • Miniature package saves circuit board area

Contextual Info: RN1673 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1673 Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm • Two devices are incorporated into a Super-Mini (6 pin) package

RN1110F

Abstract: RN2110F RN47A1
Contextual Info: RN47A1 TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN47A1 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package.

4n49 OPTOCOUPLER

Abstract: TRANSISTOR REPLACEMENT GUIDE proton optocoupler 66168 66168-300 66168-105 4N49 4N49 JANTX
Contextual Info: 66168 Mii PROTON RADIATION TOLERANT OPTOCOUPLER Pin-for-Pin Replacement for 4N49 OPTOELECTRONIC PRODUCTS DIVISION Features: Applications: • • • • • • • • • • High Reliability Base lead provided for conventional transistor biasing Rugged package

Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> DESCRIPTION PIN CONFIGURATION FEATURES > APPLICATION Package type CIRCUIT DIAGRAM FUNCTION The seven circuits share the VCC and GND. Unit ABSOLUTE MAXIMUM RATINGS Unless otherwise noted, Ta = –20 ~ +75°C Symbol

optocoupler 66168

Abstract: 66168-105
Contextual Info: 66168 Features: Applications: • • • • • • • • • • mn - PROTON RADIATION TOLERANT OPTOCOUPLER Pin-for-Pin Replacement for 4N49 High Reliability Base lead provided for conventional transistor biasing Rugged package Stability over wide temperature