transistor
Abstract: POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list
Contextual Info: Transistor Bipolar Transistor Transistor with Internal Resistor Quick Reference by Package Product List Quick Reference by Function/Application Small Signal Transistor Transistor for Array Power Transistor Bipolar Transistor MOS,FET Field Effect Transistor
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x13769xj2v0cd00o-126mp-25o-220+15mp-40mp-45mp-45fmp-80mp-10transistorpower mos fet 2sj 2sktransistor 2sk2sk typen channel fet arraylow frequency power transistortransistor mp40transistor p 3high hfe transistorlist
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marking P33 transistor
Abstract: marking P32 transistor transistor P32 25 marking P34 DTA12 DTA124E LDTA124EET1 SC-89 100 p34 transistor
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network
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ldta124eet1sc-89463c-01463c-02+7marking p33 transistormarking p32 transistortransistor p32 25marking p34dta12dta124e100 p34 transistor
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Mitsubishi M54564
Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
Contextual Info: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide
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a/20v16p2z16pin225mil+1505min20pin300mil20p2n20p2emitsubishi m54564m54534m54571pm54667pm54585fpm54571m54566fp16p2nm54522p equivalentm54532p
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MJE2955
Abstract: 2N3645 bc557 BC307 BC212
Contextual Info: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu The facturer
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o-92spo-237o-220o-928+6io051mje29552n3645bc557bc307bc212
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tyco igbt
Abstract: tyco igbt 1200V D81359
Contextual Info: V23990-P366-F flow PACK 0, 1200V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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v23990-p366-ftj150d81359tyco igbt+1tyco igbt 1200v
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tyco igbt
Abstract: P361 ntc thermistor 500 ohm SPWM Inverter circuit
Contextual Info: V23990-P361-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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v23990-p361-fd81359tyco igbtp361+2ntc thermistor 500 ohmspwm inverter circuit
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P364
Abstract: tyco igbt V23990-P364-F
Contextual Info: V23990-P364-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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v23990-p364-ftj150d81359p364+1tyco igbt
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tyco igbt
Abstract: SPWM 555 spwm igbt tyco igbt 1200V HP-1001 SPWM Inverter
Contextual Info: V23990-P360-F flow PACK 0, 1200V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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v23990-p360-ftj150d81359tyco igbt+5spwm 555spwm igbttyco igbt 1200vhp-1001spwm inverter
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sc 6038
Abstract: tyco igbt p363
Contextual Info: V23990-P363-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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v23990-p363-fd81359sc 6038tyco igbt+1p363
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tyco igbt
Abstract: V23990-P365-F 600v 30 kHz IGBT
Contextual Info: V23990-P365-F flow PACK 0, 600V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Datasheet values Unit max. Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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v23990-p365-fd81359tyco igbt600v 30 khz igbt |
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p367
Abstract: tyco igbt 1200V p367 diode tyco igbt R120 HP1001
Contextual Info: V23990-P367-F flow PACK 0, 1200V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Condition 1200 V IC 17
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v23990-p367-ftj150d81359p367+5tyco igbt 1200vp367 diodetyco igbtr120hp1001
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PRDP0016AA-A
Contextual Info: Magazine code Magazine material P300PC PVC Polyvinyl chloride Package name Renesas code Previous code DIP-16 PRDP0016AA-A 16P4 Maximum storage No. Maximum storage No. Maximum storage No. Packing form Transistor/Magazine Magazine/Inner box Transistor/Inner box
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tyco igbt
Abstract: P363 V23990-P363-F-PM diode rg 28
Contextual Info: Targetdatasheet flow PACK 0, 600V, 15A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P363-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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v23990-p363-f-pm-100a/msd81359tyco igbt+2p363diode rg 28
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MC 340 transistor
Abstract: P367 tyco igbt 1200V V23990-P367-F-PM
Contextual Info: Target datasheet flow PACK 0, 1200V, 15A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P367-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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v23990-p367-f-pm-100a/msd81359mc 340 transistor+2p367tyco igbt 1200v
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p364
Abstract: tyco igbt V23990-P364-F-PM V23990-P364 ntcthermistor nf012 ntc-thermistor Diode DR 25
Contextual Info: Target datasheet flow PACK 0, 600V, 20A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P364-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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v23990-p364-f-pmd81359p364tyco igbt+5v23990-p364ntcthermistornf012ntc-thermistordiode dr 25
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SO692
Abstract: so692 equivalent SO642 transistor P39
Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR • ■ ■ ■ Type Marking SO 692 P39 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER NPN COMPLEMENT IS SO642 2
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so692so642ot-23so692 equivalent+1transistor p39
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transistor P39
Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS SO642
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transistor P39
Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS SO642 s
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V23990-P365-F-PM
Contextual Info: Target datasheet flow PACK 0, 600V, 25A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P365-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
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Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE PLASTIC SOT-23 PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS
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transistor P39
Abstract: small signal pnp SO642 SO692 4032C OC310
Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS
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so692ot-23so642transistor p39+3small signal pnp4032coc310
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transistor P39
Abstract: SO642 SO692 4032C
Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS
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so692ot-23so642-300icroelectronics+2transistor p394032c
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transistor P39
Contextual Info: SO692 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ Type Marking SO692 P39 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS THE PNP COMPLEMENTARY TYPE IS SO642 APPLICATIONS VIDEO AMPLIFIER CIRCUITS RGB
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so692so642ot-23transistor p39 |
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RT1P441
Abstract: RT3P33M
Contextual Info: PRELIMINARY RT3P33M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3P33M is compound transistor built with two RT1P441 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
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