TRANSISTOR P3 Search Results

HAT1058C

Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,

transistor 45 f 122

Abstract: BFQ32C SOT173 GHz PNP transistor BFP96
Contextual Info: Product specification Philips Semiconductors 'P3/'23 PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D BFQ32C 7 1 1 0 0 2 b 0 0 4 5 4 2 4 03b • P H I N PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT 173X

eiaj SC70

Abstract: mo-203aa a 4x transistor
Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SC70-3 0.20 (0.008) M P3.049 VIEW C C 3 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE CL b INCHES SYMBOL 6 5 4 CL CL E1 E 1 2 3 e e1 D C CL A A2 SEATING PLANE A1 -C- PLATING

MO178AB

Abstract: a 4x transistor TIP 41 transistor MO178 L2 SC74
Contextual Info: Plastic Packages for Integrated Circuits Small Outline Transistor Plastic Packages SOT23-3 0.20 (0.008) M P3.064 VIEW C C 3 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE CL b INCHES SYMBOL 6 5 4 CL CL E1 E 1 2 3 e e1 D C CL A A2 A1 WITH b b1 MILLIMETERS

MC7812

Abstract: MJ11016 equivalent equivalent of BS170 MJ11016 MC7812 equivalent ferroxcube P3C8 MC1391P MC7812 MOTOROLA 2N5337 MJL16218
Contextual Info: MOTOROLA Order this document by MJL16218/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJL16218* NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors *Motorola Preferred Device POWER TRANSISTOR 15 AMPERES

160N04

Abstract: D1876 NEC160N04 TO263-7 NP160N04TDG-E1-AY NP160N04TDG-E2-AY NP160N04TDG To-263-7 MP-25ZT
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TDG-E1-AY Note

Contextual Info: AN_BLF578 BLF578 LDMOS Transistor Model Rev. 01 — 25-09-2008 Application note Document information Info Content Keywords BLF578, BLF578, LDMOS, model Abstract This document describes the BLF578 LDMOS transistor model including its installation, usage and verification.

Contextual Info: AN_BLF878 BLF878 LDMOS Transistor Model Rev. 01 — 28-07-2008 Application note Document information Info Content Keywords BLF878, BLF878, LDMOS, model Abstract This document describes the BLF878 LDMOS transistor model including its installation, usage and verification.

82N06

Abstract: transistor 8550 sd equivalent transistor 8550 D1877 NP82N06PLG NP82N06PLG-E1-AY MP-25ZP NP82N06PLG-E2-AY data transistor ss 8550 d 41A28
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N06PLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N06PLG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING NP82N06PLG-E1-AY

GaN ADS

Abstract: GaN amplifier 120W transistor hemt RF393x
Contextual Info: RFMD. High Power GaN Unmatched Power Transistors UPT Introducing the development of Our GaN unmatched power transistor (UPT) family comprised solely of gallium nitride (GaN) transistors. Using an advanced 0.5µm GaN high electron mobility transistor (HEMT) semiconductor process,

Transistor J550

Abstract: j584 transistor
Contextual Info: Document Number: AFT26H200W03S Rev. 0, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 45 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

TRANSISTOR J477

Abstract: TRANSISTOR J477 48 AFT18HW355S C5750Y5V1H226Z
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 1, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK3366 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3366 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. ORDERING INFORMATION FEATURES

NTE74LS194A

Abstract: NTE74181 NTE74LS181 NTE74LS193 NTE74193 32 bit carry select adder code NTE74S188 NTE74LS192 NTE74S181 NTE74S189
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74181, 24-Lead DIP, See Diag. 252 NTE74LS181, NTE74S181 Arithmetic Logic Unit/Function Generator Input 5 0 Jj vcc Input AO 2 16-Lead DIP, See Drag. 249 NTE74182, NTE74S182 Look-Ahead Carry Generator

C10535E

Abstract: C11531E fb1l3n
Contextual Info: DATA SHEET COMPOUND TRANSISTOR FB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive

Contextual Info: TOSHIBA HN3G01J TO SH IBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS AM HIGH FREQUENCY AM PLIFIER APPLICATIONS +0.2 0.1 1 .6 _ ] AUDIO FREQUENCY AM PLIFIER APPLICATIONS

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 2, 4/2010 RF Power Field Effect Transistor MRF6V10250HSR3 RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 0, 7/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

Contextual Info: Document Number: AFT26P100−4WS Rev. 1, 8/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

E67349

Abstract: TLP630
Contextual Info: TO SH IBA TLP630 TOSHIBA PHOTOCOUPLER PROGRAMMABLE CONTROLLERS GaAs IRED & PHOTO-TRANSISTOR TLP630 Unit in mm A C/D C-IN PU T MODULE TELECOMMUNICATION The TOSHIBA TLP630 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode

AGR19045XF

Contextual Info: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

Contextual Info: BLC8G27LS-160AV Power LDMOS transistor Rev. 2 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1.

J307 FET

Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
Contextual Info: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for