TRANSISTOR P1D Search Results

SGA9289Z

Contextual Info: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This

Contextual Info: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF

SGA9289Z

Abstract: MARKING P2Z SGA-9289z SGA9289ZSR rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9
Contextual Info: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This

sga9189z

Abstract: marking p1z SGA-9189Z marking p1z transistor
Contextual Info: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF

Contextual Info: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor Medium Power Discrete SiGe Transistor Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 = 39dBm, and P1dB = 25.5dBm. This

Contextual Info: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The

SGA8543Z-EVB2

Abstract: marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P
Contextual Info: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The

Contextual Info: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from

Transistor TL 31 AC

Abstract: j142
Contextual Info: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from

SiGe POWER TRANSISTOR

Abstract: Gan hemt transistor RFMD InP HBT transistor low noise
Contextual Info: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from

SGA-9089Z

Abstract: InP HBT transistor low noise
Contextual Info: SGA-9089Z SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from

SGA9189

Abstract: marking p1z 130C SGA-9189 SGA9189Z trace code marking RFMD SGA-9189Z marking p1z transistor
Contextual Info: SGA-9189 Z SGA-9189(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9189 is a high performance transistor designed for operation to

MARKING P2Z

Abstract: SGA9289 SGA-9289 130C J231 transistor j392 sot89
Contextual Info: SGA-9289 Z SGA-9289(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9289 is a high performance transistor designed for operation to

b 595 transistor

Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
Contextual Info: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor

J231 transistor

Abstract: j392 diode germanium tu 38 f SGA-9289 130C SiGe POWER TRANSISTOR transistor RF S-parameters transistor J9 SGA9289Z
Contextual Info: Preliminary SGA-9289 SGA-9289Z Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor SiGe

AN1541

Abstract: transistor 22p 30mils L239N START499 transistor k 316
Contextual Info: AN1541 APPLICATION NOTE A MEDIUM POWER AMPLIFIER AT 1.8 GHz USING THE NPN Si START499 TRANSISTOR Data at 1.8 GHz 3V, 200mA Gain = 15dB, P1dBout = 23dBm, NF = 3.3dB, RLin > 12dB, RLout > 7.7dB START499 is a product of the START Family (ST Advanced Radio frequency Transistor). Housed in the

BPT23E01

Abstract: BPT30E01 BPT30E02 BPT30E04 bipolarics
Contextual Info: BIPOLARICS, INC. Part Number BPT23E01 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • High Output Power 30.0 dBm, P1dB @ 3.0 GHz • High Gain Bandwidth Product ft = 6.0 GHz @ IC = 200 mA • High Gain Bipolarics' BPT30E01 is a high performance silicon bipolar transistor

BPT23E01

Abstract: BPT23E02 BPT23E04 POWER TRANSISTOR 1 WATT 2.4 GHZ
Contextual Info: BIPOLARICS, INC. Part Number BPT23E01 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • High Output Power 30.0 dBm, P1dB @ 2.3 GHz • High Gain Bandwidth Product ft = 6.0 GHz @ IC = 200 mA • High Gain Bipolarics' BPT23E01 is a high performance silicon bipolar transistor

transistor SG 14

Abstract: pHEMT transistor tgf2021 TGF2021-04 TGF2021-04-SG 4GHZ TRANSISTOR
Contextual Info: TrìQuint SEMICONDUCTOR TGF2021-04-SG 4 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The TriQuint TGF2021-04-SG is a 4 Watt P1dB discrete 4mm pHEMT RF Transistor operating at 12 volts. Both de­ fense and commercial markets can take advantage of the

BPT18E01

Abstract: BPT18E02 BPT18E05
Contextual Info: BIPOLARICS, INC. Part Number BPT18E01 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • DESCRIPTION AND APPLICATIONS: High Output Power 30.0 dBm, P1dB @ 1.8 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 200 mA t • High Gain Bipolarics' BPT18E01 is a high performance silicon bipolar transistor

DRF1601

Abstract: smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER
Contextual Info: UHF POWER TRANSISTOR DRF1601 NPN SiGe RF TRANSISTOR The DRF1601 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1601 can be used as a driver device or an output device, depending on the specific application.

AN1541

Abstract: START499
Contextual Info: AN1541 APPLICATION NOTE A MEDIUM POWER AMPLIFIER AT 1.8 GHz USING THE NPN Si START499 TRANSISTOR Data at 1.8 GHz 3V, 200mA Gain = 15dB, P1dBout = 23dBm, NF = 3.3dB, RLin > 12dB, RLout > 7.7dB START499 is a product of the START Family (ST Advanced Radio frequency Transistor). Housed in the

AN1541

Abstract: START499 L239 3C910 nh060
Contextual Info: AN1541 APPLICATION NOTE A MEDIUM POWER AMPLIFIER AT 1.8 GHz USING THE NPN Si START499 TRANSISTOR Data at 1.8 GHz 3V, 200mA Gain = 15dB, P1dBout = 23dBm, NF = 3.3dB, RLin > 12dB, RLout > 7.7dB START499 is a product of the START Family (ST Advanced Radio frequency Transistor). Housed in the

smd transistor k 1540

Abstract: 703 TRANSISTOR smd transistor 835 transister transister smd DRF1401 NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js
Contextual Info: UHF POWER TRANSISTOR DRF1401 NPN SiGe RF TRANSISTOR The DRF1401 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1401 can be used as a driver device or an output device, depending on the specific application.