Mitsubishi M54564
Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
Contextual Info: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide
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a/20v16p2z16pin225mil+1505min20pin300mil20p2n20p2emitsubishi m54564m54534m54571pm54667pm54585fpm54571m54566fp16p2nm54522p equivalentm54532p
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P14N60E/D
Contextual Info: MOTOROLA O rder this docum ent by M G P14N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGP14N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high
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p14n60e/dmgp14n60e |
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2SC5606
Abstract: transistor 3504 nec 2SC5606-T1 NEC JAPAN 3504
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold
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2sc56062sc5606-t1transistor 3504 necnec japan 3504 |
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2SC5606
Abstract: 2SC5606-T1 ic ta 7698
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold
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2sc56062sc5606-t1ic ta 7698 |
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XC6SLX16-CSG324
Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
Contextual Info: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller
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ds695ch-7301xc6slx16-csg324ch7301 dvi vhdl+7dvi vhdlxilinx ch7301chrontel 7301 xilinxxps thin film transistor(tft) controllertft controllerxc4vlx25-ff668-10a/ch7301 dvi vhdl
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2SC5600
Abstract: transistor 2SC5600 P14999EJ1V0DS00
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5600 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold t = 0.59 mm
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2sc56002sc5600-t1transistor 2sc5600p14999ej1v0ds00 |
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186jlg color tv circuit diagram schematicsfree transistor equivalent book 2scnpn transistors list according to current, voltag+7rca sk cross-referencekia 4318transistor cs 9012til 322asx3704diode d.a.t.a. book1n1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1n6227silecgg 841n623+62g300chn 543ic hxj 20381n52398in52401n48 zener diode
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2SC5006
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA821TC NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to
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pa821tc2sc5006is21el2pa821tc-t1 |
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P14548EJ1V0DS00
Abstract: 2SC5006 3570 1231 NEC k 787
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA801TC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band
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pa801tc2sc5006pa801tc-t1p14548ej1v0ds00+23570 1231nec k 787
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2SC5600
Abstract: Transistor NEC K 3654 2SC5603 NPN C 9013 marking 2c
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA843TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5603, 2SC5600)
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pa843tc2sc56032sc5600s21e2+3transistor nec k 3654npn c 9013marking 2c
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marking 89
Abstract: 2SC5007 2SC5010 3771 nec
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA840TC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA840TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to
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pa840tc2sc50102sc5007s21e2+2marking 893771 nec
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NE66219
Abstract: NEC66219 2SC5606
Contextual Info: NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package
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ne662192sc5606nec66219ne66219-t1+52sc5606-t1ne66219-a2sc5606-ane66219-t1-a2sc5606-t1-a
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2SC5010
Abstract: 2SC5006 7805 nec NEC JAPAN 7805
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA835TC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to
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pa835tc2sc50102sc5006s21e2+27805 necnec japan 7805
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OF IC 7909
Abstract: P14553EJ1V0DS00 2SC5010 MARKING 702 6pin ic
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA826TC NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD FEATURES • Low noise and high gain • Operable at low voltage • Small feedback capacitance: Cre = 0.4 pF TYP.
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pa826tc2sc5010pa826tc-t1of ic 7909+2p14553ej1v0ds00marking 702 6pin ic
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2SC5006
Abstract: 2SC5010 IC 7805 14 pin
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA835TC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE DESCRIPTION The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to
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pa835tc2sc50102sc5006ic 7805 14 pin |
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IC A 4661 0634
Abstract: IC A 3101 0632 8 pin 2SC5006 2SC5007
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA831TC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE DESCRIPTION The µPA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to
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pa831tc2sc50062sc5007ic a 4661 0634+1ic a 3101 0632 8 pin
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2SC5435
Abstract: marking 83
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA826TC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA826TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to
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pa826tcs21e22sc5435marking 83 |
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2SC5007
Abstract: 2SC5010 nec 5201 3771 nec
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA840TC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE DESCRIPTION The µPA840TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to
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2SC5435
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA826TC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA826TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to
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pa826tcs21e22sc5435 |
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2SC5606
Abstract: 2SC5606-T1 ultra low noise NPN transistor nec microwave
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package
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2sc56062sc5606-a2sc5606-t12sc5606-t1-a+3m8e0904eultra low noise npn transistornec microwave
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2SC5006
Abstract: A 2630 0717
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA810TC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band
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pa810tc2sc5006pa810tc-t1a 2630 0717 |
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2SC5195
Abstract: k 1507
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA814TC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz
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