TRANSISTOR P1 P 12 Search Results

2sj460

Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

2SJ460

Abstract: MEI-1202 X10679E
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98 .2 DATA SHEET D EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION

2SJ460

Abstract: MEI-1202
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ460 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

K1132

Abstract: 2SJ166 2SJ186 2SK1132 T100
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 m - MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SJ166 P-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

fet e300

Abstract: lEI-616 n fet e300 2SJ185 2SK1399 T100 T200 diode mark T7
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ185 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING OUTLINE DIMENSIONS Unit

MEI-1202

Abstract: T100 IC-3333
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 COMPOUND FIELD EFFECT POWER TRANSISTOR PA1527 P-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE DESCRIPTION

75178

Abstract: 2SJ165 2SK1132
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98 .2 MOS FIELD EFFECT TRANSISTOR 2SJ165 P-CHANIMEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm

2SJ21

Abstract: 2SJ210 T200 T400
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ210 P-CHANNEL MOS FET FOR SWITCHING The 2SJ210, P-channel vertical type MOS FET, is a switching device

TRANSISTOR F10 10N

Abstract: SS-220 10v 2SJ198 2SK1484
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ198 P-CHANNEL MOS FET FOR SWITCHING The 2SJ198 is a p-channel vertical type MOS FET switching

DIODE marking CJSS

Abstract: marking j5a 2SJ204 2SK1582 T200 T400
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ204 P-CHANNEL MOS FET FOR SWITCHING The 2SJ204, P-channel vertical type MOS FET, is a switching device

c 2328a

Abstract: 2SJ206 T500
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ206 P-CHANNEL MOS FET FOR SWITCHING The 2SJ206, P-channel vertical type MOS FET, is a switching device

transistor 2sk

Abstract: S10ms 2SJ184 2SK1398 T100 T200
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SJ184 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ184, P-channel vertical type MOS FET, is a switching device

transistor 2sk

Abstract: 2SJ199 2SK1485 IEI-1209
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ199 P-CHANIMEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm

NEC Zener diode product List

Abstract: 2SJ178 2sj178 transistor
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD-EFFECT TRANSISTOR 2SJ178 P-CHANIMEL MOS FET FOR HIGH-SPEED SWITCHING The 2SJ178 is a p-channel vertical type MOS FET switching device

2SJ178

Abstract: 2sj178 transistor
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials. P1 98.2 FECT TRANSISTOR 2SJ178 P-CHANNEL M O S FET FOR HIG H-SPEED S W IT C H IN G The 2SJ178 is a p-channel vertical type MOS FET switching device

7741B

Abstract: 2SJ205
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MO S FIELD EFFECT TRANSISTOR 2 S J2 0 5 P-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS U nit: mm

2Sj197 data sheet

Abstract: 2SJ197 2SK1483
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET MOS FIELD EFFECT TRANSISTOR 2 S J197 P-CHANNEL MOS FET FOR SWITCHING PACKAG E D IM ENSIO NS U n it : mm

cmh2

Contextual Info: TLP114A GaAßAs IRED & PHOTO-IC T I P1 1 4 A DIGITAL LOGIC ISOLATION. U n it in mm LINE RECEIVER. P O W E R SU PPLY CONTROL FEED BAC K CONTROL. SW ITCHING P O W E R SUPPLY. TRANSISTOR INVERTOR. The T O S H IB A M IN I F L A T C O U P L E R T L P 1 1 4 A is a sm all outline

transistor BC 306A

Contextual Info: CMOS LSI No. 5485 LC665304A, 665306A, 665308A, 665312A, 665316A Four-Bit Single-Chip Microcontrollers with 4, 6, 8, 12, and 16 KB of On-Chip ROM Preliminary 3149-DIP48S 0.25 [LC665304A/665306A/665308A/665312A/665316A] 25 1 24 0.48 1.05 2.53 1.78 5.1max 3.8

Contextual Info: STTA5012TV1/2 TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 25A I f a v V 1200V rrm 60ns trr (typ) V f STTA5012TV1 STTA5012TV2 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN

transistor marking 2A H

Abstract: STTA212S
Contextual Info: STTA212S TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If av 2A V rrm 1200V (typ) 65ns (max) 1.5V trr Vf FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPEFIATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION AND RECTIFICATION

Contextual Info: STTA1512P/PI TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 15A V rrm 1200V trr (typ) 55ns Vf 1.9V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION

Contextual Info: STTA 1212D TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 12A V rrm 1200V trr (typ) 50 ns Vf 2.0 V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION

STTA212S

Abstract: 15A POWER TRANSISTOR FOR SMPS
Contextual Info: STTA212S TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 1200V trr (typ) 65ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGHETIZATION AND RECTIFICATION ULTRA-FAST AND SOFT RECOVERY