TRANSISTOR P 10 Search Results

mcl610

Abstract: MCA81 MCL611 Transistor Data chart mcl600 mcs6200 transistor 6 B transistor c 2500 MCT4R MCL601
Contextual Info: 112 O p to iso Wlato rs A* * A, ~ PACKAGE PRODUCT KEY OUTPUT FORMAT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR

Micropower Amplifiers

Abstract: n-channel mos or gate CA3600 TRANSISTOR N2 TRANSISTOR N3 differential pair transistor mos transistor P3N-3
Contextual Info: Arrays Transistor-continued COS/MOS Transistor Array - For Linear Circuit Applications c a 36 oo Applications and Features Terminal 1. Channel High input resistance: 100GS2 typ . Lo w gate-terminal curren t: 10 pA (typ .) Matched p-channel p air: Gate-voltage

2N6897

Contextual Info: 2N6897 -12A, -100V, P-Channel Enhancement Mode Power MOS Field Effect Transistor January 1997 Features Description • -12A, -100V The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters,

BP317

Abstract: MS-012AA PHP1035
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHP1035 P-channel enhancement mode MOS transistor Preliminary specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Preliminary specification P-channel enhancement mode MOS transistor

BP317

Abstract: MS-012AA PHP212L
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHP212L Dual P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Objective specification Dual P-channel enhancement mode MOS transistor

TEA-1035

Abstract: NEC 2SJ330 2SJ330 MEI-1202 TC-2465 tc2465
Contextual Info: DATA SHEET NEC P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR Ü— r 2SJ330 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ330 is P-channel M O S Field Effect Transistor designed PACKAGE DIMENSIONS in millimeters fo r solenoid, m otor and lam p driver.

CA3273

Abstract: SOLENOID 24V DRIVER CIRCUIT 2N5320
Contextual Info: CA3273 High-Side Driver April 1994 Features Description • Equivalent High Pass P-N-P Transistor The CA3273 is a power IC equivalent of a P-N-P pass transistor operated as a high-side-driver current switch in either the saturated ON or cutoff (OFF) modes. The CA3273

lm 9805

Abstract: smd transistor marking B3 smd transistor marking DK diode SOT89 smd marking B mumbai SMD Transistor 6f BP317 BST120 transistor smd marking dk Transistor lm 358
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BST120 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor

MS-012AA

Abstract: PHP206
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 PHP206 Dual P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 05 Philips Semiconductors Objective specification Dual P-channel enhancement mode MOS transistor

BFQ42

Abstract: w7 transistor transistor w7 IRF 502 TRANSISTOR BLW29 transistor j18 Si NPN c25a f0pf philips bfq42
Contextual Info: P H IL IP S El b5E D INTERNATIONAL 711002b G0b2bD2 3 b l • P H I N BFQ42 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in cl ass-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V . The transistor is resistance stabilized and is

BF926

Abstract: BF926 philips
Contextual Info: BF926_ — = _ PHILIPS INTERNATIONAL SbE D • T-3M 7 IL- SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a TO-92 envelope intended for use as preamplifier, mixer and oscillator in v.h.f. and

BF926

Abstract: BF926 philips PNP UHF transistor transistor BF926
Contextual Info: BF926_ — = T - 3 H 7 ._ -._ _ L L - PHILIPS INTERNATIONAL SbE D m D0421flb Tb^ « P H I N SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a TO-92 envelope intended for use as preamplifier, mixer and oscillator in v.h.f. and

differential pair cascode

Abstract: piezoelectric transducer amplifier CA3095 cascode transistor array Super matched pair super beta transistor Transistor Array differential amplifier transistor Common Base amplifier common collector npn array npn 8 transistor array
Contextual Info: D Arrays Transistor-continued Super-Beta Transistor Array Incorporates a Super-Beta Differential Cascode Amplifier Plus 3 Independent n-p-n Transistors CA3095 Applications and Features D ifferen tial Cascode A m p lifie r: T w o super-beta n-p-n transistors —

NP100P06PDG

Abstract: NP100P06PDG-E1-AY MP-25ZP NP100P06PDG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P06PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP100P06PDG-E1-AY

TF230

Abstract: NP50P04KDG NP50P04KDG-E1-AY NP50P04KDG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP50P04KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP50P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP50P04KDG-E1-AY Note

m249

Abstract: NP83P06PDG NP83P06PDG-E1-AY MIS1 MP-25ZP NP83P06PDG-E2-AY M83A
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP83P06PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP83P06PDG-E1-AY Note

2SJ605

Abstract: 2SJ605-S 2SJ605-Z 2SJ605-ZJ MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ605 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SJ605

NP50P06KDG

Abstract: NP50P06KDG-E1-AY NP50P06KDG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP50P06KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP50P06KDG-E1-AY Note

NP36P06KDG

Abstract: NP36P06KDG-E1-AY NP36P06KDG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP36P06KDG-E1-AY Note

NP36P04KDG

Abstract: NP36P04KDG-E1-AY NP36P04KDG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P04KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP36P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP36P04KDG-E1-AY Note

m249

Abstract: NP83P04PDG MP-25ZP NP83P04PDG-E1-AY NP83P04PDG-E2-AY CTF100
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP83P04PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP83P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP83P04PDG-E1-AY Note

2SJ329

Abstract: MEI-1202 TEA-1035
Contextual Info: DATA SHEET N E C kf * A P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SJ329 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ329 is P-channel MOS Field Effect Transistor designed PACKAGE DIMENSIONS in millimeters fo r solenoid, m otor and lamp driver.

Contextual Info: Data Sheet µPA2812T1L P-channel MOS FIELD EFFECT TRANSISTOR R07DS0762EJ0100 Rev.1.00 May 31, 2012 Description The µPA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features

PXT2222

Abstract: PXT2222A
Contextual Info: 7110fl2b 0 0 ^ 3 3 O n H P H IN P X T2222/A 7 V SILICON PLANAR EPITAXIAL TRANSISTOR NPN silicon planar e p ita xia l transistor, housed in a SO T89 envelope. It is intended fo r sw itching and linear applications. The co m p le m e n tary ty p e is P X T 2 9 0 7 /A .