TRANSISTOR NPN 30 WATT Search Results

Motorola transistors MRF455

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. • 60 W, 30 MHz RF POWER TRANSISTOR NPN SILICON Specified 12.5 Volt, 30 MHz Characteristics —

BUV23

Abstract: motorola transistor 0063
Contextual Info: MOTOROLA Order this document by BUV23/D SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications.

Contextual Info: ON Semiconductort MJ802 High−Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. • High DC Current Gain —

TRANSISTOR 1300

Abstract: J1 TRANSISTOR Radar PH1113-100 100 amp power transistor
Contextual Info: Radar Pulsed Power Transistor 100 Watts, 1.1-1.3 GHz, 3µs Pulse, 30% Duty PH1113-100 PH1113-100 Radar Pulsed Power Transistor - 100 Watts, 1.1-1.3 GHz, 3µs Pulse, 30% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor

J802

Abstract: MJ802 EQUIVALENT MJ4502 EQUIVALENT MJ4502 MJ802 transistor mj4502
Contextual Info: ON Semiconductort MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — •

Contextual Info: ON Semiconductort High−Power NPN Silicon Transistor 2N5302 . . . for use in power amplifier and switching circuits applications. • Low Collector−Emitter Saturation Voltage − 30 AMPERE POWER TRANSISTOR NPN SILICON 60 VOLTS 200 WATTS VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc

2N4922

Abstract: BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A

MJ802

Abstract: MJ802 MOTOROLA MJ802/D MJ802-D MOTOROLA TRANSISTOR MJ4502 transistor MJ802
Contextual Info: MOTOROLA Order this document by MJ802/D SEMICONDUCTOR TECHNICAL DATA MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel.

c 3421 transistor

Abstract: d 3421 transistor J802
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J802 High-Pow er NPN Silicon Transistor . . . lor use as an output device in complementary audio amplifiers to 100-Watts music power per channel. • • • 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

TRANSISTOR 2n5302

Abstract: 2N5302
Contextual Info: ON Semiconductort High-Power NPN Silicon Transistor 2N5302 . . . for use in power amplifier and switching circuits applications. • Low Collector–Emitter Saturation Voltage – 30 AMPERE POWER TRANSISTOR NPN SILICON 60 VOLTS 200 WATTS VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc

MRF454 motorola

Abstract: ferroxcube 56-590-65 56590653B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF454 NPN Silicon RF Power TVansistor . . . designed for power am plifier applications in industrial, commercial and am ateur radio equipment to 30 MHz. • 80 W, 30 MHz RF POWER TRANSISTOR NPN SILICON Specified 12.5 Volt, 30 MHz Characteristics —

D 400 F 6 F BIPOLAR TRANSISTOR

Abstract: buv23 transistor 325
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High D C current gain: H FE min. - 15 at I q - 8 A

BU108

Abstract: BDW94 DTS801 MJE2482 2SC1419 BU326 BU100 2N3055/MJ802
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25–100 @ IC = 7.5 A

Contextual Info: ERICSSON ^ PTB 20170 30 Watts, 1.80 - 2.00 GHz Cellular Radio RF Power Transistor Preliminary Key Features Description The 20170 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 1.8-2.00 GHz frequency band. It is rated at 30 Watts minimum output

inductor vk200

Abstract: VK200 INDUCTOR MRF238 VK200-4B VK200 4B inductor vk200 rf choke rasistor marine radio 02CM arco trimmer
Contextual Info: i MRF238 MOTOROLA Advance Information 30 W — 160 MHz The RF Line RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed for 13.6 Volt VHF large»signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.

MJE2360T

Abstract: MOTOROLA TRANSISTOR MJE2361T
Contextual Info: MOTOROLA Order this document by MJE2360T/D SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT.

BU108

Abstract: TIP105 Darlington transistor BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage —

Contextual Info: ERICSSON ^ PTB 20200 30 Watts, 450 - 490 MHz Cellular Radio RF Power Transistor Preliminary Description Key Features The 20200 is a class AB, NPN, common emitter RF Power Transistor intended for 24 V D C operation across the 450-490 MHz frequency band. It is rated at 30 Watts minimum output

PTB 20200

Contextual Info: ERICSSON ^ PTB 20200 30 Watts, 380-500 MHz Cellular Radio RF Power Transistor Description The 20200 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380-500 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP

470-860 mhz Power 5 w

Contextual Info: ERICSSON ^ PTB 20091 30 Watts, 470-860 MHz UHF TV Linear Power Transistor Description The 20091 is an NPN, common emitter RF power transistor intended for 25 Vdc class A operation from 470 to 860 MHz. It is rated at 30 watts P-sync output power. Ion implantation, nitride surface passivation

transistor A 935

Contextual Info: e PTB 20007 30 Watts, 935–960 MHz Cellular Radio RF Power Transistor Description The 20007 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 30 watts minimum output power, it may be used for

transistor BD 522

Abstract: BDS08 transistor 3203 Transistor 3202 1 A 60 221A-06 10 watt power transistor bd BD801 BD802 BD808 BD810
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD801 P lastic High Power Silicon NPN Transistor ‘Motorola Preferred Device 8 AMPERE POWER TRANSISTORS NPN SILICON 100 VOLTS 65 WATTS . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi

transistor A 935

Abstract: t 935 NE50
Contextual Info: ERICSSON ^ PTB 20007 30 Watts, 935-960 MHz Cellular Radio RF Power Transistor Description The 20007 is a class AB, NPN, common emitter RF power transistor intended for 24 Vdc operation across the 935 to 960 MHz frequency band. Rated at 30 watts minimum output power, it may be used for

4700 IC

Abstract: ic 4700 20091
Contextual Info: e PTB 20091 30 Watts, 470–860 MHz UHF TV Linear Power Transistor Description The 20091 is an NPN, common emitter RF power transistor intended for 25 Vdc class A operation from 470 to 860 MHz. It is rated at 30 watts P-sync output power. Ion implantation, nitride surface passivation