TRANSISTOR NEC D 880 Search Results

microwave oscillator

Abstract: transistor code 458 055 2SC2339 1357 transistor NEC 2SC2342 transistor code 2sc2342 bd 743 transistor NEC 1357 NE568 NE56854
Contextual Info: NEC/ BD CALIFOR NIA OODOlET 3 | 6427414 N E C/ CALIFORNIA ' 30C 00129 D 7 C 3 / — 23 MICROWAVE TRANSISTOR SERIES NE568 PRELIMINARY DATA SHEET FEATURES DESCRIPTIONAND APPLICATIONS • T h e N E568 S e r i e s o f NPN silic o n medium pow e r t r a n ­ HIGH fS

transistor NEC D 822 P

Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

transistor NEC D 822 P

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

PA1726

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1726 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1726 is N-Channel MOS Field Effect 8 Transistor designed for power management 5 applications of notebook computers and so on.

D1425

Abstract: 2SK3367 2SK3367-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3367 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES ORDERING INFORMATION • Low on-resistance

2SK3367

Abstract: 2SK3367-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3367 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. ★ ORDERING INFORMATION FEATURES • Low on-resistance

2SK3367

Abstract: 2SK3367-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3367 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. ORDERING INFORMATION FEATURES • Low on-resistance

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1704 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING Unit : mm This µPA1704 is N-Channel MOS Field Effect Transistor 8 designed for power management applications and Li-ion 5 1,2,3 ; Source

D1425

Abstract: 2SK3367 2SK3367-Z transistor A144
Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK3367 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. ORDERING INFORMATION FEATURES

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1704 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING Unit : mm This µPA1704 is N-Channel MOS Field Effect Transistor 8 designed for power management applications and Li-ion 5 1,2,3 ; Source

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1704 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING Unit : mm This product is N-Channel MOS Field Effect Transistor 8 5 designed for power management applications and Li-ion 1,2,3 ; Source

2SK3367

Abstract: 2SK3367-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3367 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. ORDERING INFORMATION FEATURES • Low on-resistance

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1704 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING Unit : mm This µPA1704 is N-Channel MOS Field Effect Transistor 8 designed for power management applications and Li-ion 5 1,2,3 ; Source

PA1726

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1726 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1726 is N-Channel MOS Field Effect 8 Transistor designed for power management ★ 5 applications of notebook computers and so on.

smd code marking NEC

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
Contextual Info: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part

2SK3367

Abstract: 2SK3367-Z
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

transistor 2sc 1586

Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

AM/SSC 9500 ic data

Contextual Info: PRELIMINARY DATA SHEET IV IF f " / h ETERO JUNCTION FIELD EFFECT TRANSISTOR / NE428M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE428M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

very simple walkie talkie circuit diagram

Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
Contextual Info: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.

double TRANSISTOR SMD MARKING CODE mc

Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
Contextual Info: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.

NEM090853P-28

Abstract: T-97M
Contextual Info: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM090853P-28 N-CHANNEL SILICON POWER LDMOS FET FOR UHF-BAND POWER AMPLIFIER DESCRIPTION The NEM090853P-28 is an N-channel enhancement-mode lateral MOS FET designed for 0.8 to 1.0 GHz, 90 W single-end power amplifier applications, such as, GSM/EDGE/N-CDMA cellular base station. Dies are manufactured

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.