Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR NC Search Results

    TRANSISTOR NC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR NC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original
    mn1280kgt50n60kdabc547 smd transistorkia1117af+6transistor smd zgy6 smd transistormb4213y4 smd transistorsmd transistor zaakgt25n120nda PDF

    transistor

    Abstract: transistor ITT BC548 pnp transistor transistor pnp BC337 pnp transistor pnp bc547 transistor BC327 NPN transistor MPSA92 168 transistor 206 2n3904 TRANSISTOR PNP
    Contextual Info: Alphanumerical List of Types TVpe Page 2N3904 2N3906 2N4124 2N4126 2N7000 2N7002 Small-Signal Transistor NPN Small-Signal Transistor (PNP) Small-Signal Transistor (NPN) Small-Signal Transistor (PNP) DMOS Transistor (N-Channel) DMOS Transistor (N-Channel)


    OCR Scan
    2n39042n39062n41242n4126+162n70002n7002bc327bc328bc337bc338transistortransistor ittbc548 pnp transistortransistor pnpbc337 pnp transistorpnp bc547 transistorbc327 npn transistormpsa92 168transistor 2062n3904 transistor pnp PDF

    pnp DARLINGTON TRANSISTOR ARRAY

    Abstract: M54583FP nmos transistor symbol switching transistor M54585 DARLINGTON TRANSISTOR ARRAY
    Contextual Info: <TRANSISTOR ARRAY> M54583FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY SINK TYPE DESCRIPTION PIN CONFIGURATION M54583FP is eight-circuit collector-current sink type Darlington transistor arrays. The circuits are made of PNP and NPN NC transistors. Both the semiconductor integrated circuits perform


    Original
    m54583fp400mapnp darlington transistor arraynmos transistor symbol+3switching transistorm54585darlington transistor array PDF

    M54513FP

    Abstract: M5451
    Contextual Info: <TRANSISTOR ARRAY> M54513FP 8-UNIT 50mA TRANSISTOR ARRAY SINK TYPE DESCRIPTION PIN CONFIGURATION M54513FP are eight-circuit transistor arrays. The circuits are made of NPN transistors. Both the semicon- ductor integrated NC circuits perform high-current driving with extremely low input-


    Original
    m54513fpm5451 PDF

    2SA2160

    Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
    Contextual Info: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series


    Original
    o-220fm47p4869e2sa21602sa2149+82sc6005rqw200rdx100n45rqa200n03rqw200n03rla130n03rdx*100n452sc6027 PDF

    M54563FP

    Contextual Info: <TRANSISTOR ARRAY> M54563FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54563FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN NC transistors. This semiconductor integrated circuit performs high


    Original
    m54563fp500ma PDF

    Contextual Info: <TRANSISTOR ARRAY> M63840FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840FP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN NC transistors. Both the semiconductor integrated circuits perform


    Original
    m63840fp500ma PDF

    Contextual Info: <TRANSISTOR ARRAY> M63840KP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840KP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN NC transistors. Both the semiconductor integrated circuits perform


    Original
    m63840kp500ma PDF

    M54562FP

    Contextual Info: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN NC transistors. This semiconductor integrated circuit performs high


    Original
    m54562fp500ma PDF

    darlington Mitsubishi

    Abstract: 20P2N-A DARLINGTON ARRAYS
    Contextual Info: <TRANSISTOR ARRAY> M54522FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SINK TYPE DESCRIPTION PIN CONFIGURATION M54522FP is an eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. NC Both the semiconductor integrated circuits perform high-current


    Original
    m54522fp400madarlington mitsubishi20p2n-a+1darlington arrays PDF

    Contextual Info: TRANSISTOR/TO SOCKETS TO SERIES TO-3 Power Transistor Sockets SPECIFY TO-3 PART NUMBER FROM THE CHART BELOW Quality sockets simplify transistor mounting, uses chassis as a heat sink. Integral mounting saddle is tapped for 6-32 NC screws. Body will not crack/chip during handling


    OCR Scan
    o-340-to-340-go-34o0-tt0-360-t+1852-26904858-fax PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original
    dta143ee416/sc PDF

    6aa marking

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original
    dta114ye416/sc6aa marking PDF

    transistor A 564

    Abstract: S-AV8 2-13B1A 564 transistor S-AU4
    Contextual Info: 7.1. Precautions for handling RF Pow er Transistor 1 Mounting ceramic seal type transistor For mounting such a transistor as shown in the figure, on a printed circuit board or heat sink, it is ncessary to adopt either the method of making the lead level (Fig. 2, (a) or the


    OCR Scan
    tcs90transistor a 564s-av82-13b1a+2564 transistors-au4 PDF

    PT 4304 a transistor

    Abstract: 2SC3587 noise diode
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise


    Original
    2sc3587pt 4304 a transistornoise diode PDF

    2SCR522M

    Contextual Info: General purpose transistor 20V,0.2A 2SCR522M / 2SCR522EB / 2SCR522UB Dimensions (Unit : mm) Structure NPN silicon epitaxial planar transistor VMT3 Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Applications Switch, LED driver Abbreviated symbol : NC


    Original
    2scr522m2scr522eb2scr522ub2sar522m+32sar522eb2sar522ubr1010a PDF

    2SCR522M

    Contextual Info: General purpose transistor 20V,0.2A 2SCR522M / 2SCR522EB / 2SCR522UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Applications Switch, LED driver Abbreviated symbol : NC


    Original
    2scr522m2scr522eb2scr522ub2sar522m+32sar522eb2sar522ubr1010a PDF

    Contextual Info: General purpose transistor 20V,0.2A 2SCR522M / 2SCR522EB / 2SCR522UB Structure NPN silicon epitaxial planar transistor Dimensions (Unit : mm) VMT3 Features Complements the 2SAR522M / 2SAR522EB / 2SAR522UB. Applications Switch, LED driver Abbreviated symbol : NC


    Original
    2scr522m2scr522eb2scr522ub2sar522m+32sar522eb2sar522ubr1010a PDF

    Mitsubishi M54564

    Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
    Contextual Info: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide


    Original
    a/20v16p2z16pin225mil+1505min20pin300mil20p2n20p2emitsubishi m54564m54534m54571pm54667pm54585fpm54571m54566fp16p2nm54522p equivalentm54532p PDF

    MJE2955

    Abstract: 2N3645 bc557 BC307 BC212
    Contextual Info: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu­ The facturer


    OCR Scan
    o-92spo-237o-220o-928+6io051mje29552n3645bc557bc307bc212 PDF

    Contextual Info: TRANSISTOR MODULE SOD300A40/6Q UL;E76102 M SQD300A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for


    OCR Scan
    od300a40/6qe76102sqd300a400/600v+2--a400q02b06 PDF

    transistor sc59 marking

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a


    Original
    dtc114te416/sctransistor sc59 marking PDF

    6aa marking

    Abstract: 327 SOT-6
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114YE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a


    Original
    dtc114ye416/sc6aa marking327 sot-6 PDF

    BUX20

    Abstract: bux 716 transistor BUX
    Contextual Info: *B U X 2 0 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN. TRIPLE DIFFUSE Preferred device D is p o s itif re c o m m a n d é High speed, high current, high power transistor Transistor de puissance rapide, fo rt courant Thermal fatigue inspection


    OCR Scan
    bux20cb-159bux 716transistor bux PDF