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    TRANSISTOR N 522 Search Results

    TRANSISTOR N 522 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR N 522 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SMD marking code 55B

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;


    Original     		psmn005-55bpsmn005-55psmd marking code 55b PDF

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;


    Original     		psmn005-55bpsmn005-55p603502/300/04/pp12 PDF

    Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bb53^31 □D2flD31 813 PH2369 IAPX l SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N-P-N transistor in a plastic TO-92 envelope intended for high-speed switching applications. QUICK REFERENCE DATA Collector-base voltage open emitter


    OCR Scan     		d2fld31ph2369oa2fl03b PDF

    phd45n03

    Abstract: PHP45N03LT PHD45N03L 74 series PHILIPS PHB45N03LT PHD45N03LT PHP45 php45n03
    Contextual Info: PHP45N03LT; PHB45N03LT; PHD45N03LT N-channel TrenchMOS transistor Rev. 06 — 05 October 2000 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		php45n03ltphb45n03ltphd45n03lto-220ab+7ot404ot428phd45n03phd45n03l74 series philipsphp45php45n03 PDF

    PHP83N03LT

    Abstract: PHB83N03LT PHE83N03LT TO-220AB transistor package
    Contextual Info: PHP83N03LT; PHB83N03LT; PHE83N03LT N-channel TrenchMOS transistor Rev. 01 — 23 January 2001 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		php83n03ltphb83n03ltphe83n03lto-220ab+3ot404ot226to-220ab transistor package PDF

    PSMN130-200D

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN130-200D N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES SYMBOL PSMN130-200D QUICK REFERENCE DATA • ’Trench’ technology


    Original     		psmn130-200dot428603502/300/03/pp12 PDF

    PSMN035-150B

    Abstract: PSMN035-150P
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN035-150B; PSMN035-150P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN035-150B; PSMN035-150P SYMBOL QUICK REFERENCE DATA


    Original     		psmn035-150bpsmn035-150p603502/300/03/pp12 PDF

    transistor smd code marking tm

    Abstract: SMD transistor MARKING CODE 213 PSMN130-200D PSMN130
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN130-200D N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES SYMBOL PSMN130-200D QUICK REFERENCE DATA • ’Trench’ technology


    Original     		psmn130-200dot428pinning0200dtransistor smd code marking tm+2smd transistor marking code 213psmn130 PDF

    PSMN015-100B

    Abstract: PSMN015-100P
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN015-100B; PSMN015-100P SYMBOL QUICK REFERENCE DATA


    Original     		psmn015-100bpsmn015-100p603502/300/03/pp12 PDF

    5401 DM smd transistor

    Abstract: 5401 DM PSMN070-200P PSMN070-200B 5401 DM transistor
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN070-200B; PSMN070-200P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN070-200B; PSMN070-200P SYMBOL QUICK REFERENCE DATA


    Original     		psmn070-200bpsmn070-200p603502/300/03/pp125401 dm smd transistor+25401 dm5401 dm transistor PDF

    PSMN035-150P

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN035-150B; PSMN035-150P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN035-150B; PSMN035-150P SYMBOL QUICK REFERENCE DATA


    Original     		psmn035-150bpsmn035-150po220ab PDF

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-25D N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors Product specification N-channel logic level TrenchMOS(TM) transistor FEATURES SYMBOL PSMN005-25D QUICK REFERENCE DATA


    Original     		psmn005-25dpsmn00525dot428 PDF

    PSMN005-25D

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-25D N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors Product specification N-channel logic level TrenchMOS(TM) transistor FEATURES SYMBOL PSMN005-25D QUICK REFERENCE DATA


    Original     		psmn005-25d603502/300/05/pp12 PDF

    transistor BR 471 A

    Abstract: 74 series PHILIPS PHP95N03LT PHB95N03LT PHE95N03LT
    Contextual Info: PHP95N03LT; PHB95N03LT; PHE95N03LT N-channel TrenchMOS transistor Rev. 01 — 02 February 2001 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		php95n03ltphb95n03ltphe95n03lto-220ab+4ot404ot226transistor br 471 a74 series philips PDF

    SMD Marking 4570

    Abstract: PSMN070-200P PSMN070-200B
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN070-200B; PSMN070-200P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN070-200B; PSMN070-200P SYMBOL QUICK REFERENCE DATA


    Original     		psmn070-200bpsmn070-200po220absmd marking 4570 PDF

    BSH108

    Abstract: 03ab10 MSB003 transistor 8722
    Contextual Info: BSH108 N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		bsh108m3d08803ab10msb003+1transistor 8722 PDF

    PHT4NQ10LT

    Abstract: SC-73
    Contextual Info: PHT4NQ10LT N-channel enhancement mode field-effect transistor Rev. 01 — 11 September 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		pht4nq10ltm3d087ot223sc-73 PDF

    Contextual Info: BSH108 N-channel enhancement mode field-effect transistor Rev. 01 — 06 September 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		bsh108m3d088msb003mbb076 PDF

    07342

    Contextual Info: PHT4NQ10LT N-channel enhancement mode field-effect transistor Rev. 01 — 11 September 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		pht4nq10ltm3d087ot22307342 PDF

    PHB100N03LT

    Abstract: 03AB29
    Contextual Info: PHB100N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 07 September 2000 Product specification M3D166 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		phb100n03ltm3d166ot40403ab29 PDF

    03ab10

    Contextual Info: BSH108 N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		bsh108m3d08803ab10 PDF

    BSH114

    Contextual Info: BSH114 N-channel enhancement mode field effect transistor Rev. 01 — 09 November 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		bsh114m3d088msb003 PDF

    BSH120T

    Abstract: 03ac49
    Contextual Info: BSH120T N-channel enhancement mode field-effect transistor Rev. 01 — 06 September 2000 Product specification M3D186 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		bsh120tm3d18603ab40mbb076+103ac49 PDF

    Contextual Info: BSH114 N-channel enhancement mode field effect transistor Rev. 01 — 09 November 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		bsh114m3d088msb003 PDF