TRANSISTOR N 343 AD Search Results

A1668

Abstract: r50 transistor 00-B
Contextual Info: TMF3202Z Semiconductor Dual Gate MOSFET □ Description SOT-343 Unit in mm The TMF3202Z is an enhancement type N-channel field-effect transistor. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good crossmodulation performance during AGC. Integrated diodes between

Contextual Info: That H EW LETT WL'EM P A C K A R D High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High P erform ance, M edium Pow er, and Low N oise A p p lications 4-lead SC-70 SOT-343 Surface Mount Plastic

Contextual Info: What H E W L E T T 1"UM P A C K A R D High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Id eal for High Gain, Low N oise A p p lications Surface Mount Plastic Package/SOT-343 SC-70 O u tlin e 4T • T ran sition F requ en cy

M12x1 connector

Abstract: OCH100-18GM70-A0-V1 OCH100-18GM70-A2-V1 white led 4pin photoelectric sensor
Contextual Info: F A C T O R Y A U T O M A T I O N OCH100-18GM70-A0-V1 SW24 RS 297-5603 M18x1 8.2 Diffused mode photoelectric sensor with background suppression 81 70 41 40 - 100 mm Features • Diffused mode photoelectric sensor with adjustable background suppression Sensing area adjustment

Contextual Info: N AUER PHILIPS/DISCRETE DEVELOPMENT D A T A ObE D bbS3T31 D0152D1 fl • RX3034B70W This data sheet contains advance information and specifications are subject to change without notice. PULSED MICROWAVE POWER TRANSISTORS NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C

Contextual Info: N T E ELE C T R O nT cT T Ñ T 5SE D ^ 3 1 5 5 ^ 0002075 b24 M N T E fflT S W T T L = TRANSISTOR TRANSISTOR LOGIC 4-Blt Binary Full Adder "/Fast Carry 16-Lead DIP, See Dlag. 249 4-Bit Magnitude Comparator 16-LeadDIP,SeeDiag.249 B3 Data Input Data Input A3

47PF

Abstract: RX3034B70W Transistor 5331
Contextual Info: N AMER PHILIPS/DISCRETE DEVELOPM EN T D A T A ObE D • t.faS3T31 GQISHDI fl ■ . ~ “ RX3034B70W T his data sheet contains advance Inform ation and specifications are subject to change w ith out notice. T - 3 3 - / j T PULSED M ICRO W AVE POW ER TR A N SISTO R S

K105 transistor

Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
Contextual Info: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and

transistor su 312

Abstract: 1J250
Contextual Info: Polyester Capacitors W rap A n d Fill Case • H ig h In su la tio n Resistan ce • "Instru m en t" Q u a lity • T o u gh , M o istu re R e sistin g C a se • Conservatively R ated • C a p a cita n ce Tolerances: ±20%, ±10%, ±5% Physical Characteristics

D 1413 transistor

Abstract: NTE74191 transistor K 1413 32 bit carry select adder code transistor a 1413 NTE74LS191 NTE74190 NTE74LS190 5.1 diagram NTE74
Contextual Info: 52E D N T E ELECTRONICS INC b M B l B S 6 O D Q S im TÔT INTE g iT B S T T T E TRANSISTOR TRANSISTOR LOGIC) Look-Ahead Carry Generator 16-Lead DIP,See Dlag. 249 Dual Carry/Save Full Adder T - 4 3 ' Û' 14-Lead DIP,SeeDlag.247 Blnary-to-BCD Code 16-LeadDIP,SeeDlag.249

Contextual Info: 52E D N T E ELECTRONICS INC b M B l B S 6 O D Q S im TÔT INTE g iT B S T T T E TRANSISTOR TRANSISTOR LOGIC) Look-Ahead Carry Generator 16-Lead DIP,See Dlag. 249 Dual Carry/Save Full Adder T - 4 3 ' Û' 14-Lead DIP,SeeDlag.247 Blnary-to-BCD Code 16-LeadDIP,SeeDlag.249

Contextual Info: Ordering n u m ber: EN 1 6 1 4 B _ 2SC3636 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features . High reliability Adoption of HVP process . Fast speed. . High breakdown voltage.

2N6782

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information Power Field Effect Transistor N -Channel Enhancem ent-M ode S ilico n G ate TM O S N-CHANNEL TM O S POWER FETs . . . desig n ed fo r high voltag e , high speed p o w e r sw itch in g a p p lica tio n s such as sw itch in g regulators, co nve rters, so ­

cadstar pcb

Abstract: cadstar shape synario cadstar ALLEGRO PART NUMBER INDEX
Contextual Info: Synario ECS and Board Entry Index A Allegro Add symbol attributes . 3-38 Adding a netlister to a menu . 3-28, 3-41, 3-42 Allegro ECO Changes . 3-49

Contextual Info: Product specification Philips Semiconductors N-channel enhancement mode vertical D-MOS' transistor FEATURES PINNING - SOTS4 TO-92 variant • Direct interface to C-MOS, TTL, etc. PIN SYMBOL 1 2 3 • High-speed switching • No secondary breakdown. DESCRIPTION

BC309 equivalent

Abstract: st 393 8-pin T0-226AE
Contextual Info: MOTOROLA SC XSTRS/R F MbE D • b3b?2S4 Oa'Obll b ■MOTb SMALL-SIGNAL BIPOLAR TRANSISTORS — PLASTIC-ENCAPSULATED TRANSISTORS (continued) 7 ^ jZ 7 - Cs5 Table 1. Plastic-Encapsulated General-Purpose Transistors (continued) Case 29-03 — T0-226AE (1-WATT T0-92)

Contextual Info: t 353*131 □ a ifla s i 1 • DEVELOPMENT DATA BUT22BF BUT22CF This data sheet contains advance information and specifications are subject to change without notice* N AMER PHILIPS/DISCRETE 35E D SILICON DIFFUSED POWER TRANSISTORS T - 33-0? High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope intended for use

KCD2-E2L

Abstract: DIN19234 Sensor output interface terminal KCD2-E JH transistor 0C343
Contextual Info: Sensor Output Interface Terminals KCD2-E. KCD2-E. Input - Single channel - Input for sensors to NAMUR /DIN 19 234 Sensor - 24 VDC supply voltage - Standard interface for prevention of signal transmission errors Lead breakage monitoring - Switching status indicator, yellow

BUT22BF

Abstract: BUT22CF but22c BUT22
Contextual Info: i r b 353*131 □Glfl05'i DEVELOPMENT DATA . This data sheet contains advance Info rm a tio n and BUT22BF BUT22CF 11 specifications are subject to change w ith o u t notice* N AMER P HILIPS/DISCRETE 2SE D SILICON DIFFUSED POWER TRANSISTORS T - 3 3 -£ > ?

Design Note 128

Abstract: THAT 2181 oa1 transistor
Contextual Info: 1 THAT Corporation Design Note 128 What’saPTATTemp.Coefficient,&WhereDoesItComeFrom? Introduction THAT Corporation’s VCAs and RMS detectors exhibit temperature coefficients that are proportional to absolute temperature PTAT . This fact is occasionally disconcerting to some

Contextual Info: rZ T S G S -T H O M S O N L9821 HIGH SIDE DRIVER ADVANCE DATA • 25A PEAK OUTPUT CURRENT ■ Ron = 100m£2 ■ DIAGNOSTIC AND PROTECTION FUNCTIONS . |iP COMPATIBLE ■ GROUNDED CASE ■ INRUSH CURRENT LIMITING CIRCUIT MULTIPOWER BCD TECHNOLOGY DESCRIPTION

BU2708AF

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AF GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current

TRANSISTOR D 570

Abstract: BSS110 INFINEON BSS110 B34 transistor
Contextual Info: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSS110 FEATURES • Low threshold voltage • Direct interface to C-MOS, TTL, etc. • High speed switching • No secondary breakdown. APPLICATIONS • Intended for use as a Line current interruptor in

Contextual Info: Polyester Capacitors Wrap & Fill Case Type 663 pm* V - 1.625 M IN .- - - 21'—^-*2 - 1.625 M IN .- - • • • • • • For Maximum Space Saving High Insulation Resistance “Instrument” Quality