TRANSISTOR MS 173 TE Search Results

AQS210PS

Abstract: AQV214E Application transistor aqy sensor matsushita aqv214 AQS210T2S AQS210TS AQV251 AQS821HS AQV210S AQW210S
Contextual Info: PhotoMOSRelay Products for use in Modems is the worldwide brand name of automation control products from Matsushita Electric Works. Long life, high –reliability PhotoMOS relays– Playing an important role in fundamental telecommunication PhotoMOS relays combine the advantages of solid-state relays with those of mechanical relays. Our wide array of

210EH

Abstract: OPTOCOUPLER 4-PIN application note 214EH "Base Station Controller" matsushita electrical conduit AQV 614 OPTOCOUPLER 4-PIN 210EH datasheet AQV212S 4pin 4PIN optocoupler
Contextual Info: PhotoMOSRelay Products for use in Modems is the worldwide brand name of automation control products from Matsushita Electric Works. Long life, high –reliability PhotoMOS relays– Playing an important role in fundamental telecommunication PhotoMOS relays combine the advantages of solid-state relays with those of mechanical relays. Our wide array of

BSN20

Abstract: HZG303
Contextual Info: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.

BSN20

Contextual Info: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.

MAGX-000035-09000P

Contextual Info: MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 Features •         GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed Applications 50 V Typical Bias, Class AB Common-Source Configuration

Contextual Info: MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Functional Schematic Features •         Rev. V2 GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed Applications

IN5343

Contextual Info: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages to 500 MHz. • P ush-P ull Configuration Reduces Even Numbered Harmonics

8085 transistor

Contextual Info: GU PhotoMOS AQS210PS TESTING DAA (Data Access Arrangement) circuit package. SOP 16-pin type. 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)

AQS210PS

Abstract: AQS210PSX AQS210PSZ IC 8085 pin
Contextual Info: GU PhotoMOS AQS210PS TESTING DAA (Data Access Arrangement) circuit package. SOP 16-pin type. 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)

mrf166w application note

Abstract: MRF166W
Contextual Info: Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics

BUK95180-100A

Abstract: BUK96180-100A
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features

transistor bf 196

Abstract: BF 194 transistor transistor bf 195 ge-2 transistor BF 194 npn transistor transistor bf 194 transistor bf 193 BF173 bf 173 transistor transistor bf 194 E C B
Contextual Info: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on e m itter configuration,

726 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS

Abstract: 741 datasheet motorola MOTOROLA POWER 726 MOS FET TRANSISTOR MOTOROLA TRANSISTOR 726 motorola MOSFET 935 MRF166W motorola rf book
Contextual Info: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz.

IK1509

Abstract: 12v switching transistor regulator 0-12 v voltage regulator 12v 2a
Contextual Info: TECHNICAL DATA Switching Voltage Regulators IK1509-xx Features • • • • • • • • • • • 3.3V, 5V, 12V, and adjustable output versions Adjustable version output voltage range, 1.23V to 18V ± 3% max over line and load conditions Guaranteed 2A output load current

Contextual Info: •ISOCOfl C O H P O N E N T S LTD 7SC D 4flSb510 0Q0D17M C N Y 1 7 - 1 , DTT ISO C N Y 1 7 - 2 , 7^ V/~ $ 3 C N Y 1 7 - 3 OPTICALLY COUPLED ISOLATORS PACKAGE DIMENSIONS IN INCHES MM ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise noted) Storage Temperature .

transistor k 425

Abstract: sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A
Contextual Info: MOTOROLA SC XSTRS/R F 12E I b3b75SM Q0fl4fl22 7 | BU522 BU522A BU522B MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O LTA G E SILICON POWER DARLINGTO NS 7 AMPERES Power Transistor mainly intended for use as ignition circuit output transistor. DARLINGTON T R IPLE D IFFU SED

NEL230153

Abstract: GG01 NEL2300 transistor k42 3500 2301 151 k424 LARGE SIGNAL IMPEDANCES transistor T330 NEL2301-53 NEL2303
Contextual Info: NE C / CALIFORNIA NEC 1SE D h 427 414 0001275 T 'S h 't l T - 3 3 -Ö ? Ö NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS jta = 2 5 °q RATINGS • HIGH GAIN: G mb = 6.5 dB

transistor BD 522

Abstract: bd800 bd802 TRANSISTOR BD 168 BD798 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800
Contextual Info: MOTORCLA SC XSTRS/R 12E F D I b3fcj72SM MOTOROLA Qüfl MTST " M | BD796 BD798 SEMICONDUCTOR TECHNICAL DATA BÒ800 BD8Û2 PLASTIC HIGH POWER SILICON PNP TRANSISTOR 8 AMPERE POWER TRANSISTOR . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.

C67078-S1452-A2

Abstract: 160 173 TRANSISTOR
Contextual Info: BUZ 173 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 173 -200 V -3.6 A 1.5 Ω TO-220 AB C67078-S1452-A2 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S1452-A2

Contextual Info: BUZ 173 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 173 -200 V -3.6 A 1.5 Ω TO-220 AB C67078-S1452-A2 Maximum Ratings Parameter Symbol Continuous drain current

CCD42-80

Abstract: BS9523-F0002 e2v ccd BS9523
Contextual Info: CCD42-80 Back Illuminated High Performance CCD Sensor FEATURES * 2048 by 4096 Pixel Format * 13.5 mm Square Pixels * Image Area 27.6 x 55.3 mm * Wide Dynamic Range * Symmetrical Anti-static Gate Protection * Back Illuminated Format for Enhanced Quantum Efficiency

SKHI21

Abstract: SKHI 64 IGBT DRIVER SEMIKRON IGBT gate driver welding chopper transformer FOR UPS ups circuit diagram using igbt 1kW IGBT 1kw mosfet UPS circuit diagram pcb INVERTER 10kW
Contextual Info: se MIKR dn Absolute Maximum Ratings Symbol Vs V iH < o I CL IouLAVmax Vc e dv/dL V isolIO V isol12 RGonmin RGoffmin Q ouL/pulse T op T sLa Term Supply volLage prim. InpuL signal volLage High OuLpuL peak currenL OuLpuL average currenL (max.) CollecLor-EmiLLer volLage sense across

2N7075

Abstract: 100-C
Contextual Info: Tem ic 2N7075 Siliconix N-Channel Enhancement-Mode Transistor Product Summary VnsiV 100 r D S « n ) ( ß ) 0.065 I d (A) 30 TO -2S4A A H erm etic P ack ag e D o Case Isolated D S G Top View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

17-P10-Si

Abstract: E-1048-S602 46247 SSRPC DC24 S600 103 OPTO COUPLER din "46247" opto coupler specifications
Contextual Info: Solid State Remote Power Controller E-1048-S6xx Description The E-T-A Solid State Remote Power Controller SSRPC E-1048-S6xx is an opto decoupled transistorised switching device providing both protection and signalisation. It may be used wherever safe switching and protection of resistive,