TRANSISTOR MS 173 TE Search Results

AQS210PS

Abstract: AQV214E Application transistor aqy sensor matsushita aqv214 AQS210T2S AQS210TS AQV251 AQS821HS AQV210S AQW210S
Contextual Info: PhotoMOSRelay Products for use in Modems is the worldwide brand name of automation control products from Matsushita Electric Works. Long life, high –reliability PhotoMOS relays– Playing an important role in fundamental telecommunication PhotoMOS relays combine the advantages of solid-state relays with those of mechanical relays. Our wide array of

210EH

Abstract: OPTOCOUPLER 4-PIN application note 214EH "Base Station Controller" matsushita electrical conduit AQV 614 OPTOCOUPLER 4-PIN 210EH datasheet AQV212S 4pin 4PIN optocoupler
Contextual Info: PhotoMOSRelay Products for use in Modems is the worldwide brand name of automation control products from Matsushita Electric Works. Long life, high –reliability PhotoMOS relays– Playing an important role in fundamental telecommunication PhotoMOS relays combine the advantages of solid-state relays with those of mechanical relays. Our wide array of

BSN20

Abstract: HZG303
Contextual Info: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.

BSN20

Contextual Info: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.

MAGX-000035-09000P

Contextual Info: MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V3 Features •         GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed Applications 50 V Typical Bias, Class AB Common-Source Configuration

Contextual Info: MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Functional Schematic Features •         Rev. V2 GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed Applications

TR115

Contextual Info: TR115 Telecommunications Switch Transistor / 1 Form A Relay DESCRIPTION The TR115 is a dual function circuit designed specifically as a telecommunications switch. It has an optically isolated solid state relay function that is separated from its transistor output detector function. The relay portion is composed of an LED on the input

IN5343

Contextual Info: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages to 500 MHz. • P ush-P ull Configuration Reduces Even Numbered Harmonics

AQS210PS

Abstract: AQS210PSX AQS210PSZ
Contextual Info: AQS210PS TESTING GU General Use Type SOP Series Multi-function (DAA) 16pin Type 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)

8085 transistor

Contextual Info: GU PhotoMOS AQS210PS TESTING DAA (Data Access Arrangement) circuit package. SOP 16-pin type. 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)

AQS210PS

Abstract: 8085 transistor AQS210PSX AQS210PSZ 8085
Contextual Info: AQS210PS TESTING GU General Use Type SOP Series Multi-function (DAA) 16pin Type 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)

AQS210PS

Abstract: AQS210PSX AQS210PSZ IC 8085 pin
Contextual Info: AQS210PS TESTING GU General Use Type SOP Series Multi-function (DAA) 16pin Type 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)

AQS210PS

Abstract: AQS210PSX AQS210PSZ IC 8085 pin
Contextual Info: GU PhotoMOS AQS210PS TESTING DAA (Data Access Arrangement) circuit package. SOP 16-pin type. 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)

mrf166w application note

Abstract: MRF166W
Contextual Info: Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics

transistor bf 196

Abstract: BF 194 transistor transistor bf 195 ge-2 transistor BF 194 npn transistor transistor bf 194 transistor bf 193 BF173 bf 173 transistor transistor bf 194 E C B
Contextual Info: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on e m itter configuration,

726 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS

Abstract: 741 datasheet motorola MOTOROLA POWER 726 MOS FET TRANSISTOR MOTOROLA TRANSISTOR 726 motorola MOSFET 935 MRF166W motorola rf book
Contextual Info: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz.

IK1509

Abstract: 12v switching transistor regulator 0-12 v voltage regulator 12v 2a
Contextual Info: TECHNICAL DATA Switching Voltage Regulators IK1509-xx Features • • • • • • • • • • • 3.3V, 5V, 12V, and adjustable output versions Adjustable version output voltage range, 1.23V to 18V ± 3% max over line and load conditions Guaranteed 2A output load current

Contextual Info: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz.

Contextual Info: •ISOCOfl C O H P O N E N T S LTD 7SC D 4flSb510 0Q0D17M C N Y 1 7 - 1 , DTT ISO C N Y 1 7 - 2 , 7^ V/~ $ 3 C N Y 1 7 - 3 OPTICALLY COUPLED ISOLATORS PACKAGE DIMENSIONS IN INCHES MM ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise noted) Storage Temperature .

transistor k 425

Abstract: sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A
Contextual Info: MOTOROLA SC XSTRS/R F 12E I b3b75SM Q0fl4fl22 7 | BU522 BU522A BU522B MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O LTA G E SILICON POWER DARLINGTO NS 7 AMPERES Power Transistor mainly intended for use as ignition circuit output transistor. DARLINGTON T R IPLE D IFFU SED

NEL230153

Abstract: GG01 NEL2300 transistor k42 3500 2301 151 k424 LARGE SIGNAL IMPEDANCES transistor T330 NEL2301-53 NEL2303
Contextual Info: NE C / CALIFORNIA NEC 1SE D h 427 414 0001275 T 'S h 't l T - 3 3 -Ö ? Ö NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS jta = 2 5 °q RATINGS • HIGH GAIN: G mb = 6.5 dB

A21E

Abstract: ZO 103 MA 7A 425 BFQ 58 BFQ 51 s4 marking code siemens ZO 103 transistor BFQ 263 zo 107 Q62702-F1104 transistor ZO 103 MA
Contextual Info: SIEMENS NPN Silicon RF Transistor BFQ 73S • For low-noise, low-distortion broadband amplifiers in a n te n n a an d te le c o m m u n ic a tio n s svstem s to 2 G H z ud at collector currents from 10 mA to 70 mA. / - \ • Hermetically sealed ceramic package.

MJE12007

Abstract: 221A-04 MJE-12007
Contextual Info: MOTQRCLA SC XSTRS/R 15E 0 F I b3b?2S4 0005301 Ô | T - 3Î- I/ MOTOROLA SEMICONDUCTOR MJE12007 TECHNICAL DATA 2.5 A M P E R E H O RIZON TAL DEFLECTION TRANSISTOR NPN SILICON POWER TRANSISTOR . . . specifically designed for use in small screen black and white

transistor BD 522

Abstract: bd800 bd802 TRANSISTOR BD 168 BD798 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800
Contextual Info: MOTORCLA SC XSTRS/R 12E F D I b3fcj72SM MOTOROLA Qüfl MTST " M | BD796 BD798 SEMICONDUCTOR TECHNICAL DATA BÒ800 BD8Û2 PLASTIC HIGH POWER SILICON PNP TRANSISTOR 8 AMPERE POWER TRANSISTOR . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.