TRANSISTOR MS 173 TE Search Results

AQS210PS

Abstract: AQV214E Application transistor aqy sensor matsushita aqv214 AQS210T2S AQS210TS AQV251 AQS821HS AQV210S AQW210S
Contextual Info: PhotoMOSRelay Products for use in Modems is the worldwide brand name of automation control products from Matsushita Electric Works. Long life, high –reliability PhotoMOS relays– Playing an important role in fundamental telecommunication PhotoMOS relays combine the advantages of solid-state relays with those of mechanical relays. Our wide array of

210EH

Abstract: OPTOCOUPLER 4-PIN application note 214EH "Base Station Controller" matsushita electrical conduit AQV 614 OPTOCOUPLER 4-PIN 210EH datasheet AQV212S 4pin 4PIN optocoupler
Contextual Info: PhotoMOSRelay Products for use in Modems is the worldwide brand name of automation control products from Matsushita Electric Works. Long life, high –reliability PhotoMOS relays– Playing an important role in fundamental telecommunication PhotoMOS relays combine the advantages of solid-state relays with those of mechanical relays. Our wide array of

BSN20

Abstract: HZG303
Contextual Info: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.

Contextual Info: MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - 3.5 GHz Functional Schematic Features •         Rev. V2 GaN on SiC D-Mode Transistor Technology Unmatched, Ideal for Pulsed Applications

IN5343

Contextual Info: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages to 500 MHz. • P ush-P ull Configuration Reduces Even Numbered Harmonics

8085 transistor

Contextual Info: GU PhotoMOS AQS210PS TESTING DAA (Data Access Arrangement) circuit package. SOP 16-pin type. 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)

AQS210PS

Abstract: AQS210PSX AQS210PSZ IC 8085 pin
Contextual Info: GU PhotoMOS AQS210PS TESTING DAA (Data Access Arrangement) circuit package. SOP 16-pin type. 4.4 .173 2.1 .083 10.37 .408 mm inch FEATURES 1. DAA (Data Access Arrangement) circuit package ᕃ ᕅ ᕆ ᕄ (1) PhotoMOS Relay (for hookswitch, dial pulse) (2) Optocoupler (for ring detection)

BUK95180-100A

Abstract: BUK96180-100A
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features

transistor bf 196

Abstract: BF 194 transistor transistor bf 195 ge-2 transistor BF 194 npn transistor transistor bf 194 transistor bf 193 BF173 bf 173 transistor transistor bf 194 E C B
Contextual Info: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: FS-ZF-Verstärkerstufen in Em itterschaltung. Besonders in Video-ZF-Endstufen Applications: Video IF am p lifier stages in com m on e m itter configuration,

IK1509

Abstract: 12v switching transistor regulator 0-12 v voltage regulator 12v 2a
Contextual Info: TECHNICAL DATA Switching Voltage Regulators IK1509-xx Features • • • • • • • • • • • 3.3V, 5V, 12V, and adjustable output versions Adjustable version output voltage range, 1.23V to 18V ± 3% max over line and load conditions Guaranteed 2A output load current

Contextual Info: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz.

Contextual Info: •ISOCOfl C O H P O N E N T S LTD 7SC D 4flSb510 0Q0D17M C N Y 1 7 - 1 , DTT ISO C N Y 1 7 - 2 , 7^ V/~ $ 3 C N Y 1 7 - 3 OPTICALLY COUPLED ISOLATORS PACKAGE DIMENSIONS IN INCHES MM ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise noted) Storage Temperature .

transistor k 425

Abstract: sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A
Contextual Info: MOTOROLA SC XSTRS/R F 12E I b3b75SM Q0fl4fl22 7 | BU522 BU522A BU522B MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O LTA G E SILICON POWER DARLINGTO NS 7 AMPERES Power Transistor mainly intended for use as ignition circuit output transistor. DARLINGTON T R IPLE D IFFU SED

NEL230153

Abstract: GG01 NEL2300 transistor k42 3500 2301 151 k424 LARGE SIGNAL IMPEDANCES transistor T330 NEL2301-53 NEL2303
Contextual Info: NE C / CALIFORNIA NEC 1SE D h 427 414 0001275 T 'S h 't l T - 3 3 -Ö ? Ö NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS jta = 2 5 °q RATINGS • HIGH GAIN: G mb = 6.5 dB

2N7075

Abstract: 100-C
Contextual Info: Tem ic 2N7075 Siliconix N-Channel Enhancement-Mode Transistor Product Summary VnsiV 100 r D S « n ) ( ß ) 0.065 I d (A) 30 TO -2S4A A H erm etic P ack ag e D o Case Isolated D S G Top View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

17-P10-Si

Abstract: E-1048-S602 46247 SSRPC DC24 S600 103 OPTO COUPLER din "46247" opto coupler specifications
Contextual Info: Solid State Remote Power Controller E-1048-S6xx Description The E-T-A Solid State Remote Power Controller SSRPC E-1048-S6xx is an opto decoupled transistorised switching device providing both protection and signalisation. It may be used wherever safe switching and protection of resistive,

Contextual Info: MOTO RO LA SC XSTRS/R 15E D | b 3b72 S4 F GOASS^ 0 | T -3 3 -3 3 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA PNP MJD6036 NPN MJD6039 C o m p le m e n ta ry D a rlin g to n P o w e r T r a n sisto rs D P A K For Surface M o u n t A pplications D e sig n e d fo r ge ne ral p u rp o se p o w e r a n d sw itch in g s u c h a s ou tp u t o r d river

1402C transistor

Abstract: S82D-6024 S82D-3024 S82D S82D-3005 S82D-3012 fan and lights remote 60jj transistor 1402c
Contextual Info: Switching Power Supply S82D Powerful Yet Compact 300 W or 600 W Power Supplies 5 V, 12 V, or 24 V output voltages available. 85 to 132 VAC or 170 to 264 VAC switchable input voltage for international use. Equipped with overvoltage and overload protection and remote sensing and control functions.

JE3055

Abstract: JE2955 current pm ic 3846 3055 npn mt 3055
Contextual Info: MOTOROLA SC X STR S /R F IS E D | b3b725>l ODBSSSI 1 | DPAK For Surface Mount Applications PIMP M JD2955 NPN M JD3055 T -3 ¡ Íf MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complem entary Pow er Transistors Designed for general purpose am plifier and low speed switching applications.

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MPSA44 Features NPN Silicon High Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-0 flammability rating

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MPSA44 Features NPN Silicon High Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-0 flammability rating

transistor mj 1503 motorola

Abstract: AN569 MTE30N50E tp 312 transistor
Contextual Info: MOTOROLA Order this document by MTE30N50E/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTE30N50E ISOTOP TMOS E-FET. Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 30 AMPERES 500 VOLTS

PSMN130-200D

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN130-200D N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES SYMBOL PSMN130-200D QUICK REFERENCE DATA • ’Trench’ technology

Contextual Info: MCC MPSA94
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon High Through Hole Package 150oC Junction Temperature Epoxy meets UL 94 V-0 flammability rating