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    TRANSISTOR MOSFET N-CH 30V Search Results

    TRANSISTOR MOSFET N-CH 30V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CSD17552Q3A
    Texas Instruments 30V N-Channel MOSFET 8-VSONP -55 to 150 Visit Texas Instruments Buy
    CSD17527Q5A
    Texas Instruments 30V, N-Channel NexFET™ Power MOSFETs 8-VSONP -55 to 150 Visit Texas Instruments Buy
    CSD17522Q5A
    Texas Instruments 30V N Channel NexFET™ Power MOSFET 8-VSONP -55 to 150 Visit Texas Instruments Buy
    CSD17551Q3A
    Texas Instruments 30V N-Channel MOSFET 8-VSONP -55 to 150 Visit Texas Instruments Buy
    CSD17555Q5A
    Texas Instruments 30V N-ch NexFET Power MOSFET, CSD17555Q5A 8-VSONP -55 to 150 Visit Texas Instruments Buy

    TRANSISTOR MOSFET N-CH 30V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    sop8901

    Contextual Info: SOP8901 Ordering number : ENN8199 SOP8901 PNP Epitaxial Planar Silicon Transistor N-Channel Silicon MOSFET Motor Bridge Circuit Applications Features • Composite type with a PNP transistor and an N-ch Sillicon MOSFET contained in one package facilitating highdensity mounting.


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    OP8901 ENN8199 sop8901 PDF

    MCH6935

    Contextual Info: MCH6935 Ordering number : ENN8039 MCH6935 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density


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    MCH6935 ENN8039 MCH6935 PDF

    pdf datasheet of ic 8038

    Abstract: ic 8038 ic 8038 APPLICATIONS MCH6933
    Contextual Info: MCH6933 Ordering number : ENN8038 MCH6933 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density


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    MCH6933 ENN8038 pdf datasheet of ic 8038 ic 8038 ic 8038 APPLICATIONS MCH6933 PDF

    MCH6937

    Contextual Info: MCH6937 Ordering number : EN8040A SANYO Semiconductors DATA SHEET MCH6937 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density


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    MCH6937 EN8040A MCH6937 PDF

    VEC2901

    Contextual Info: VEC2901 Ordering number : ENN8198 VEC2901 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Switching, Flash Applications Features • • Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting.


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    VEC2901 ENN8198 VEC2901 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP9972 Power MOSFET 60A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UP9972 is an N-ch enhancement mode Power MOS Field Effect Transistor using advanced technology to provide fast speed switching, low on-resistance and perfect cost-effectiveness.


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    UP9972 UP9972 UP9972L-TN3-R UP9972G-TN3-R UP9972L-TN3-T UP9972G-TN3-T UP9972L-TA3-T UP9972G-TA3-T 2012at PDF

    UP9972

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP9972 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UP9972 is an N-ch enhancement mode Power MOS Field Effect Transistor using advanced technology to provide fast speed switching, low on-resistance and perfect cost-effectiveness.


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    UP9972 UP9972 UP9972L-TA3-T UP9972G-TA3-T QW-R502-372 PDF

    SMS6001

    Abstract: MosFET
    Contextual Info: SMS6001 440mA, 60V, RDS ON 2Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS SOT-23 The SMS6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and


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    SMS6001 440mA, OT-23 SMS6001 27-Jan-2014 MosFET PDF

    Contextual Info: コンプリメンタリーパワー MOSFET ELM34605AA-N •概要 ■特長 ELM34605AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V Vds=-30V 性を備えた大電流 MOSFET です。


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    ELM34605AA-N -55Id P3503QVG OCT-08-2004 PDF

    Contextual Info: コンプリメンタリーパワー MOSFET ELM34601AA-N •概要 ■特長 ELM34601AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V Vds=-30V 性を備えた大電流 MOSFET です。


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    ELM34601AA-N P2103NVG MAY-21-2004 PDF

    P5003QVG

    Contextual Info: コンプリメンタリーパワー MOSFET ELM34600AA-N •概要 ■特長 ELM34600AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V 性を備えた大電流 MOSFET です。 ・ Id=7A


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    ELM34600AA-N DEC-19-2005 P5003QVG P5003QVG PDF

    Contextual Info: コンプリメンタリーパワー MOSFET ELM34603AA-N •概要 ■特長 ELM34603AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=30V 性を備えた大電流 MOSFET です。 ・ Id=7A


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    ELM34603AA-N P2803NVG JUL-25-2005 PDF

    Contextual Info: コンプリメンタリーパワー MOSFET ELM34604AA-N •概要 ■特長 ELM34604AA-N は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=40V 性を備えた大電流 MOSFET です。 ・ Id=7A


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    ELM34604AA-N P2804NVG AUG-19-2004 PDF

    Contextual Info: コンプリメンタリーパワー MOSFET ELM35603KA-S •概要 ■特長 ELM35603KA-S は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=40V 性を備えた大電流 MOSFET です。 ・ Id=10A


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    ELM35603KA-S P2204ND5G O-252-5 May-03-2006 PDF

    Contextual Info: コンプリメンタリーパワー MOSFET ELM35601KA-S •概要 ■特長 ELM35601KA-S は低入力容量 N チャンネル P チャンネル 低電圧駆動、 低オン抵抗という特 ・ Vds=40V 性を備えた大電流 MOSFET です。 ・ Id=7A


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    ELM35601KA-S P2804ND5G O-252-5 SEP-16-2005 PDF

    Contextual Info: STD17NE03L N - CHANNEL 30V - 0.034£2 - 17A - DPAK _ STripFET " POWER MOSFET PRELIMINARY DATA TYPE S TD 17N E 03L . . . . . . V dss R dS oii Id 30 V < 0.05 Q. 17 A TYPICAL RDs(on) = 0.034 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 °C


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    STD17NE03L O-252 0068772-B PDF

    Contextual Info: STB60NE03L-12 N - CHANNEL 30V - 0.009 i ì - 60A - D^PAK "SINGLE FEATURE SIZE " POWER MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id S TB60N E03L-1 2 30 V < 0.012 a 60 A • . . . . . . . TYPICAL RDS(on) = 0.009 AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


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    STB60NE03L-12 TB60N E03L-1 STB60NE3L1-16 O-263 PDF

    transistor DI 468 circuit diagram application

    Abstract: SC06140 *P80NE STP80NE03L-06 *80ne03 24v mosfet for audio 5.1 circuit transistor vds rds 12 id 80a to220
    Contextual Info: STP80NE03L-06 N - CHANNEL 30V - 0.005ft - 80A - TO-220 STripFET POWER MOSFET TYPE S TP 80N E 03L-06 • . . . . V R d ss 30 V d Id S o ii < 0.006 Q. 80 A TYPICAL R D S (on) = 0.005 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 °C


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    STP80NE03L-06 005ft O-220 STP80NE03L-06 transistor DI 468 circuit diagram application SC06140 *P80NE *80ne03 24v mosfet for audio 5.1 circuit transistor vds rds 12 id 80a to220 PDF

    PMEG2020EA

    Abstract: smps repair circuit TEA1620P 40V NPN embedded package TEA1622 pecl clock so8 30v 3a schottky barrier type rectifiers TEA1623P smps repair smd transistor bq
    Contextual Info: New MultiMarket Products Quarterly highlights Semiconductors VOLUME 3 • ISSUE 2 M AY 2 0 0 4 ■ In this issue: Welcome to the latest issue of Philips’ New MultiMarket Products – Quarterly highlights. P 1 PCK12429 25 - 400 MHz differential PECL clock generator


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    PCK12429 PBSS5540X PCK111/PCK210/PCKEL14/PCKEP14 TDA9965A PMEG2020EA smps repair circuit TEA1620P 40V NPN embedded package TEA1622 pecl clock so8 30v 3a schottky barrier type rectifiers TEA1623P smps repair smd transistor bq PDF

    Contextual Info: >i/i>ixiyi/i 19-0040; Rev G; 6/92 P a lm to p C o m p u te r a n d LC D Po w e r-S u p p ly R e g u la to rs G eneral Description Features 4 4 4 Low 0.9V to 5.5V Battery Input Range 4 4 87% Efficiency at 200m A The MAX722/MAX723 provide three improvements over


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    MAX722/MAX723 X722/M X723/EV 032mm) PDF

    diode 1N4148 SMD PACKAGE DIMENSION

    Abstract: SMD Marking Code Microchip diode uf 6 pin SMD MARKING CODE FW
    Contextual Info: MCP16301/H High-Voltage Input Integrated Switch Step-Down Regulator Features: General Description: • Up to 96% Typical Efficiency • Input Voltage Range: - 4.0V to 30V MCP16301 - 4.7V to 36V (MCP16301H) • Output Voltage Range: 2.0V to 15V • 2% Output Voltage Accuracy


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    MCP16301/H MCP16301) MCP16301H) OT-23-6 MCP16301/H diode 1N4148 SMD PACKAGE DIMENSION SMD Marking Code Microchip diode uf 6 pin SMD MARKING CODE FW PDF

    7703V

    Contextual Info: FA7703/04 Quality is our message FUJI Power Supply Control IC FA7703/04 Application Note June -2002 Fuji Electric Co., Ltd. Matsumoto Factory 1 FA7703/04 Quality is our message WARNING 1.This Data Book contains the product specifications, characteristics, data, materials, and structures as of


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    FA7703/04 2200pF V/100mA FA7703 4700pF V/500mA 0V/20mA 7703V PDF

    of 4A, 50V BRIDGE RECTIFIER

    Contextual Info: Energy Saving Products 101 N.Sepulveda Blvd, EL Segundo 90245 California, USA IRAUDPS3-30V +/-30V Power Supply for Class-D Audio Amplifier Reference Design User Guide Rev. 1.1 4/5/2012 International Rectifier Page 1 of 20 PROPRIETARY INFORMATION - This document and the information contained therein are proprietary and are not to be reproduced, used or disclosed


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    IRAUDPS3-30V /-30V IRS27951/2 470uH of 4A, 50V BRIDGE RECTIFIER PDF

    ECG222

    Abstract: 493-1301-ND
    Contextual Info: Energy Saving Products 101 N.Sepulveda Blvd, EL Segundo 90245 California, USA IRAUDPS3-30V +/-30V Power Supply for Class-D Audio Amplifier Reference Design User Guide Rev. 1.1 4/5/2012 International Rectifier Page 1 of 20 PROPRIETARY INFORMATION - This document and the information contained therein are proprietary and are not to be reproduced, used or disclosed


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    IRAUDPS3-30V /-30V 1234526317268954A31B145C IRS27951/2 ECG222 493-1301-ND PDF