TRANSISTOR MOSFET 2645 Search Results

21045F

Abstract: AGR26045EF J500 JESD22-C101A c.d.m. technology acp transistor EP 430 TRANSISTOR MOSFET 2645
Contextual Info: AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,

k 2645 MOSFET

Abstract: K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

k 2645 MOSFET

Abstract: K 2645 transistor NIPPON CAPACITORS mosfet j142 100B3R3CP500X A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

k 2645 MOSFET

Abstract: K 2645 schematic circuit
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

Contextual Info: Preliminary Data Sheet June 2004 AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,

AGR26180EF

Abstract: J500 JESD22-C101A j78 transistor j78 transistor equivalent
Contextual Info: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,

AGR26045EF

Abstract: J500 JESD22-C101A
Contextual Info: Preliminary Data Sheet June 2004 AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,

mmds

Abstract: AGR26180EF J500 JESD22-C101A
Contextual Info: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,

21045F

Contextual Info: Preliminary Data Sheet May 2004 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5007 MRF5007R1 RF Power Field Effect Transistor N-Channel Enhancement-Mode The M R F 5 0 0 7 is d esign ed for broadband com mercial and industrial applications at frequencies to 520 M H z. The high gain and broadband

k 2645 MOSFET

Abstract: K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

1N5408 equivalent

Abstract: Flyback Transformer Design EXCEL how to calculate SM power Supply Transformer BAL19LT1 Flyback Transformer Design EXCEL SPREADSHEET CTX22-16134 MC33260 application k 2645 MOSFET CTX22 diode zener c23
Contextual Info: AND8154/D NCP1230 90 Watt, Universal Input Adapter Power Supply Prepared by: Terry Allinder terry.allinder@onsemi.com ON Semiconductor http://onsemi.com APPLICATION NOTE General Description The NCP1230 implements a standard current mode control architecture. It’s an ideal candidate for applications

CTX22-16134

Contextual Info: NCP1230GEVB NCP1230 90 Watt, Universal Input Adapter Power Supply Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL General Description Design Specification The NCP1230 implements a standard current mode control architecture. It’s an ideal candidate for applications

SRW42EC

Abstract: SRW42EC-U04H14 1.5KE25CA AND8124 106 35K resistor capacitor 106 35K D11/diode LP sd k 2645 MOSFET Flyback Transformer Design EXCEL SMT1206
Contextual Info: AND8124/D 90 W, Universal Input, Single Stage, PFC Converter http://onsemi.com General Description The NCP1651 demo board uses a quad operational amplifier on the secondary to perform multiple functions. One section of the amplifier is used as the error amplifier. A

IRF530 mosfet

Abstract: k 2645 MOSFET SMAT70A LT4250L MAX5920A MAX5920B LT1640 LT1640L LT4250
Contextual Info: 19-2931; Rev 0; 8/03 -48V Hot-Swap Controller with External RSENSE Features ♦ Allows Safe Board Insertion and Removal from a Live -48V Backplane The MAX5920A/MAX5920B provide a controlled turn-on to circuit cards preventing glitches on the power-supply rail and damage to board connectors and components.

backplane Layout power supply

Abstract: diode led uv SMAT70A LT1640 LT4250 MAX5921 MAX5921AESA MAX5939 RTN 980 MAX5921FESA
Contextual Info: 19-2946; Rev 0; 9/03 -48V Hot-Swap Controllers with External RSENSE and High Gate Pulldown Current Features ♦ Allows Safe Board Insertion and Removal from a Live -48V Backplane The MAX5921/MAX5939 provide a controlled turn-on to circuit cards preventing damage to board connectors,

LT4250

Abstract: SMAT70A LT1640 MAX5921 MAX5921AESA MAX5939 MAX5921FESA MAX5921FESA T
Contextual Info: 19-2946; Rev 1; 2/06 -48V Hot-Swap Controllers with External RSENSE and High Gate Pulldown Current Features The MAX5921/MAX5939 hot-swap controllers allow a circuit card to be safely hot plugged into a live backplane. The MAX5921/MAX5939 operate from -20V to -80V and

2N2222 SOA

Abstract: IRL540NS
Contextual Info: 19-2931; Rev 0; 8/03 -48V Hot-Swap Controller with External RSENSE Features ♦ Allows Safe Board Insertion and Removal from a Live -48V Backplane The MAX5920A/MAX5920B provide a controlled turn-on to circuit cards preventing glitches on the power-supply rail and damage to board connectors and components.

k 2645 MOSFET

Abstract: 2645 fet SMAT70A
Contextual Info: 19-3494; Rev 0; 11/04 -48V Hot-Swap Controllers with External RSENSE Features The MAX5949A/MAX5949B are hot-swap controllers that allow a circuit card to be safely hot plugged into a live backplane. The MAX5949A/MAX5949B operate from -20V to -80V and are well-suited for -48V power systems.

Contextual Info: 19-2946; Rev 1; 2/06 -48V Hot-Swap Controllers with External RSENSE and High Gate Pulldown Current Features The MAX5921/MAX5939 hot-swap controllers allow a circuit card to be safely hot plugged into a live backplane. The MAX5921/MAX5939 operate from -20V to -80V and

SMAT70A

Abstract: LT1640 LT4250 MAX5921 MAX5921AESA MAX5939 MAX5921FESA MAX5921FESA T
Contextual Info: 19-2946; Rev 1; 2/06 -48V Hot-Swap Controllers with External RSENSE and High Gate Pulldown Current Features The MAX5921/MAX5939 hot-swap controllers allow a circuit card to be safely hot plugged into a live backplane. The MAX5921/MAX5939 operate from -20V to -80V and

IRF530 mosfet

Abstract: 2n2222 TRANSISTOR 506K SMAT70A
Contextual Info: 19-3473; Rev 0; 10/04 -48V Hot-Swap Controllers with External RSENSE Features The MAX5948A/MAX5948B are hot-swap controllers that allow a circuit card to be safely hot plugged into a live backplane. The MAX5948A/MAX5948B operate from -20V to -80V and are well-suited for -48V power

Contextual Info: 19-2931; Rev 0; 8/03 -48V Hot-Swap Controller with External RSENSE Features ♦ Allows Safe Board Insertion and Removal from a Live -48V Backplane The MAX5920A/MAX5920B provide a controlled turn-on to circuit cards preventing glitches on the power-supply rail and damage to board connectors and components.

max5984

Contextual Info: 19-3473; Rev 0; 10/04 -48V Hot-Swap Controllers with External RSENSE Features The MAX5948A/MAX5948B are hot-swap controllers that allow a circuit card to be safely hot plugged into a live backplane. The MAX5948A/MAX5948B operate from -20V to -80V and are well-suited for -48V power