TRANSISTOR MODEL LIST Search Results

Contextual Info: AN_BLS6G3135-120i BLS6G3135-120i LDMOS Transistor Model Rev. 02s — 21-05-2008 Application note Document information Info Content Keywords BLS6G3135-120i, BLS6G3135-120i_ LDMOS, model Abstract This document describes the BLS6G3135-120i LDMOS transistor model

Contextual Info: AN_BLS6G3135-20i BLS6G3135-20i LDMOS Transistor Model Rev. 01s — 02-05-2008 Application note Document information Info Content Keywords BLS6G3135-20i, BLS6G3135-20i_ LDMOS, model Abstract This document describes the BLS6G3135-20i LDMOS transistor model including its installation.

BJT IC Vce

Abstract: NPN Transistor Pair HFA3134 npn tr array pspice high frequency transistor npn 8 transistor array pspice model MM3134 525E
Contextual Info: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model June 1998 MM3134 Introduction Parameters Not Modeled This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra High Frequency Transistor Array. This array is fabricated with

BJT IC Vce

Abstract: npn spice model This application note describes the SPICE transistor model HFA3134
Contextual Info: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model June 1998 [ /Title MM3 134 /Subject (HFA3 134 8.5GH z NPN Matche d Transistor Pair SPICE Model) /Autho r () /Keywords (Intersil Corporation, semiconductor, ) /Creator () /DOCI NFO MM3134 Introduction

HFA3134

Abstract: This application note describes the SPICE transistor model 226e pspice high frequency transistor
Contextual Info: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model Semiconductor A p p lic a tio n N o te J u n e 1998 M M 3134 Introduction Parameters Not Modeled This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra

ca3083

Abstract: CA3096 MM9710 pspice high frequency transistor bjt transistor pnp PSpice TR MJE 350 333E 110E NPN PNP Transistor Arrays
Contextual Info: CA3096 and CA3083 Transistor Array SPICE Models July 1997 MM9710 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3096, and the CA3083 High Frequency NPN/PNP Transistor Arrays.

CA3046 bjt

Abstract: CA3046 spice Pspice ca3086 CA3086 spice Harris CA3046 CA3046 CA3086 Harris CA3086 CA3046 NPN 0138E
Contextual Info: CA3046, CA3086, CA3127 Transistor Array SPICE Models Semiconductor Application Note June 1997 MM9701 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086, and the CA3127 High Frequency NPN Transistor Arrays.

CA3046 bjt

Abstract: CA3086 ca3046 CA3046 spice MM9701 CA3046 NPN 333E CA3127 npn tr array CA3086 APPLICATION NOTE
Contextual Info: CA3046, CA3086, CA3127 Transistor Array SPICE Models Application Note June 1997 MM9701 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086, and the CA3127 High Frequency NPN Transistor Arrays.

Contextual Info: BC846BM3T5G, NSVBC846BM3T5G General Purpose Transistor NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model: >4000 V http://onsemi.com Machine Model: >400 V • NSV Prefix for Automotive and Other Applications Requiring • COLLECTOR

Contextual Info: MMBT4401WT1G Switching Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model; 4 kV, • http://onsemi.com Machine Model; 400 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR

sot-323 code 50k

Contextual Info: MMBT4401WT1G Switching Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model; 4 kV, • http://onsemi.com Machine Model; 400 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR

Contextual Info: MMBT4403WT1G Switching Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model; 4 kV, • http://onsemi.com Machine Model; 400 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR

Harris CA3046

Abstract: CA3046 bjt Harris CA3086 CA3046 spice CA3046 CA3086 spice CA3086 Application of the CA3086 CA3127 MM9701
Contextual Info: Harris Semiconductor No. MM9701 Harris Linear June 1997 CA3046, CA3086, CA3127 Transistor Array SPICE Models Author: Rob Adams Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3046, CA3086,

CA3096

Abstract: CA3083 NPN PNP Transistor Arrays transistor bf 760 TR MJE 350 0100M10 110E 333E microsim npn tr array
Contextual Info: Harris Semiconductor No. MM9710 Harris Linear July 1997 CA3096 and CA3083 Transistor Array SPICE Models Author: Rob Adams Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3096, and the

200B

Abstract: flange table
Contextual Info: BLL1214-250R LDMOS L-band radar power transistor Rev. 01 — 4 February 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package SOT502A with a ceramic cap. The common source is connected to the

Contextual Info: BLL1214-250R LDMOS L-band radar power transistor Rev. 01 — 4 February 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package SOT502A with a ceramic cap. The common source is connected to the

MAX280

Abstract: SSC-PTR202 SSC-PTR202-IX0 SMD 5c Transistor
Contextual Info: *Customer: SPECIFICATION ITEM MODEL PART NO. Photo Transistor SSC-PTR202-IX0 [Contents] 1. Features 2. Absolute maximum ratings 3. Electro-optical characteristics 4. Soldering profile 5. Outline dimension 6. Packing 7. Reel packing structure 8. Precaution for use

color sensitive PHOTO TRANSISTOR

Abstract: PDT323B-5 darlingtontransistor
Contextual Info: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DPT-032-022 REV : PAGE : 5mm Low Profile Photo Darlington-Transistor MODEL NO : PDT323B-5
Features :
Extra high radiant sensitivity
Very low temperature drift
Suitable for near infrared radiation
High sensitivity

ISO-2859-1

Abstract: PT202MR0MP1 EIAJ C-3
Contextual Info: SPEC. No. SH AR P ISSUE DG036004A Oct/28/03 CONPOUND SEMICONDUCTOR DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION TECHNICAL LITERATURE DEVICE TECHNICAL LITERATURE FOR Photo Transistor MODEL No. PT202MR0MP1 * The technical literature is subject to be changed without notice *

ULQ2003AQDRQ1

Abstract: ULQ2004A-Q1 ULQ2003A ULQ2003ATDQ1 ULQ2003ATDRQ1 ULQ2004A ULQ2004ATDQ1 ULQ2004ATDRQ1
Contextual Info: ULQ2003AĆQ1, ULQ2004AĆQ1, HIGHĆVOLTAGE HIGHĆCURRENT DARLINGTON TRANSISTOR ARRAY SGLS148C − DECEMBER 2002 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 200 V Using D PACKAGE TOP VIEW Machine Model (C = 200 pF, R = 0)

ULQ2003AQDRQ1

Abstract: ULQ2004A-Q1 ulq2003 ULQ2003A ULQ2003ATDQ1 ULQ2003ATDRQ1 ULQ2004A ULQ2004ATDQ1 ULQ2004ATDRQ1 darlington pair transistor
Contextual Info: ULQ2003AĆQ1, ULQ2004AĆQ1, HIGHĆVOLTAGE HIGHĆCURRENT DARLINGTON TRANSISTOR ARRAY SGLS148C − DECEMBER 2002 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds 200 V Using D PACKAGE TOP VIEW Machine Model (C = 200 pF, R = 0)

mrf1057

Abstract: AN1676 MDC5001 MRF1027T1 MRF1047T1 MRF1057T1 RK73H2A Application Note Motorola MOTOROLA small signal transistors
Contextual Info: MOTOROLA ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 SEMICONDUCTOR APPLICATION NOTE Order this document by AN1676/D AN1676 A Cascade 2 Stage Low Noise Amplifier Using the MRF1047T1 Low Noise Transistor INTRODUCTION BIASING AND MODEL DESCRIPTION This Application Note describes the performance of a

74ACxxx

Abstract: mj04 AN1403 RSH120 MJ-04 AD259 NMOS MODEL PARAMETERS SPICE xj25
Contextual Info: AN1403/D FACT I/O Model Kit Prepared by: Willard Tu http://onsemi.com APPLICATION NOTE OBJECTIVE Transistor Parameters for Typical FACT Output Buffers The objective of providing a spice modelling kit is to allow the customer to perform system level interconnect

K4115 toshiba

Abstract: TRANSISTOR K4115 k4115 toshiba k4115 K4115 toshiba transistor 2SK4115 TRANSISTOR 2SK4115 2SK4115* equivalent k411 SC-65
Contextual Info: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) 1.0 ＋0.3 Rating Unit 1.0 －0.25 Drain-source voltage VDSS 900 V 5.45±0.2