TRANSISTOR MARKING Z11 Search Results

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

transistor A113

Abstract: a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table
Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 1/2005 Will be replaced by MRF9002NT1 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

ON SEMICONDUCTOR J122

Abstract: MRF9002NR2
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array

J133 mosfet transistor

Abstract: transistor j239 MRF9002NR2 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array

MRF9002NR2

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array

J133 mosfet transistor

Abstract: ON SEMICONDUCTOR J122 MRF9002R2 transistor a113 a113 transistor marking transistor RF
Contextual Info: MRF9002R2 Rev. 5, 1/2005 Freescale Semiconductor Technical Data Will be replaced by MRF9002NT1 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array

power transistor unit j122

Abstract: MRF9002NR2
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 7, 7/2005 RF Power Field Effect Transistor Array N -Channel Enhancement-Mode Lateral MOSFET MRF9002NR2 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device

MRF9002NR2

Abstract: marking us capacitor pf l1 marking Z4 A113 RO4350 transistor A113
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 N - Channel Enhancement - Mode Lateral MOSFET MRF9002NR2 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device

MRF9002NR2

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 RF Power Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial applications with frequen- cies to 1000 MHz. The high gain and broadband performance of this device

MRF9002NR2

Abstract: A113 RO4350 mosfet j133 j239 J122 MARKING
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET MRF9002NR2 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device

MRF9002NR2

Abstract: RO4350 J104 J158
Contextual Info: Document Number: MRF9002NR2 Rev. 8, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial applications with frequen- cies to 1000 MHz. The high gain and broadband performance of this device

smd-transistor DATA BOOK

Abstract: TRANSISTOR SMD MARKING CODE SAW TRANSISTOR SMD MARKING CODE 2t SIEMENS saw filter transistor smd code marking 2406 B39431-R641-B110 smd transistor 2T saw resonator r2632 R2632 saw tv if filters
Contextual Info: Resonator R 641 433,92 MHz Features Metal package TO 39 ● 1-port resonator Terminals ● Gold-plated NiFeCo alloy Dimensions in mm, approx. weight 1,0 g Pin configuration 1 Input 1 2 Ground 3 Ground Type Ordering code Marking R 641 B39431-R641-B110 Type, date code

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

Contextual Info: VS-HFA16PB120HN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization:

orient 817b

Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

GE Transient Voltage Suppression Manual

Abstract: diode 930 6V8A 2n2646 practical application circuits UJT 2N2646 Transient Voltage Suppression Manual Bidirectional Diode Thyristors 1.5ke 30A Zener Diode SOD323 pdz 4 .7b 919b diode varistor SVC 471 14 melf diode marking code
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

Contextual Info: VS-HFA30PB120HN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 30 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization: 

MJD310

Abstract: mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282
Contextual Info: Freescale Semiconductor Technical Data Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

johanson

Contextual Info: Freescale Semiconductor Technical Data Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

A9M15

Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136