TRANSISTOR MARKING YB Search Results

Contextual Info: 32E ]> • 623 3350 0Qlb747 Q « S I P NPN Silicon RF Transistor T - *51- 17 BF 599 SIEMENS/ SPCLi SEMICONDS_ • Suitable for common emitter RF, IF amplifiers • Low collector-base capacitance due to contact shield diffusion Type Marking

TRANSISTOR MARKING YB

Abstract: sot36 3904P marking code Yb Transistor 70 sot3-6
Contextual Info: SIEMENS SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package -Q - Marking on SOT-3 6 3 package (for example W1sj

Contextual Info: 32E D • Ö23b320 O G l b U l S « S I P NPN Silicon RF Transistor -p_ ^ | « ^ 3 .S IE M E N S / SPCLi SEMICONDS _ 64 • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 70 to 150 mA. TVpe Marking

Q67041-S1417

Abstract: BSS 84 infineon
Contextual Info: BSS 84 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated VDS -60 V 8 W -0.17 A RDS on ID SOT-23 3 2 1 VPS05161 Drain pin 3 Type Package Ordering Code Marking BSS 84 P

YB1220

Abstract: SOT-26T ic voltage regulator circuit diagram SOT-26M
Contextual Info: YB1220 Dual Channel 200mA LDO Regulator Description Features The YB1220 family is a dual-channel LDO product consisting of 2 independent low noise, low dropout LDO , linear regulators especially designed for battery-powered equipment and portable device.

2815 voltage regulator

Abstract: 805 SOT-89 YB1230 voltage regulator with current limiter with mosfet voltage regulator 2805 transistor wireless sensor circuit diagram
Contextual Info: YB1230 – 600mA Low-Noise LDO Regulator Description Features The YB1230 is a series of low-noise, low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1230 regulators achieve a low 500mV dropout at 600mA load current of 3.1V output and are

YB1253

Abstract: sot-89 MARKING ge regulator B3 marking transistor sot-23
Contextual Info: YB1253 300mA, Low Power, High PSRR LDO Regulator Description Features The YB1253 is a series of ultra-low-noise, high PSRR, and low quiescent current low dropout LDO linear regulators with 2.0% output voltage accuracy. The YB1253 regulators achieve a low 300mA dropout at

2SD1584-Z

Abstract: MEI-1202
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SD1584-Z NPN SILICON EPITAXIAL TRANSISTO R MP-3 DESCRIPTION PACKAGE DIMENSIONS 2SD1584-Z is designed fo r A udio Frequency A m p lifie r and in m illim eters S w itching, especially in H ybrid Integrated Circuits. 2.3±0.2

Contextual Info: Product specification Philips Semiconductors N-channel silicon junction field-effect transistor FEATURES BF545A; BF545B; BF545C QUICK REFERENCE DATA MIN. MAX. UNIT “ 30 V BF545A 2 6.5 mA DESCRIPTION BF545B N-channel symmetrical silicon junction FETs in a

2SB624

Abstract: 2SD596
Contextual Info: NEC SILICON TRANSISTOR 2SB624 ^3£CTR0N DEVICE AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SB624 is designed fo r use in small type equipments especially recom­ in millimeters 2.8 + 0.2

BB453

Abstract: BF5458 D103D BF545A BF545B BF545C MSB003 UBB467 SFs SOT23 dk transistor
Contextual Info: • P h i l i p bb53T31 002355^ 113 ■ APX p Product specification N-channel silicon junction field-effect transistor FEATURES N AriER b «>■£/« BF545Aî BF545Bî BF545C QUICK REFERENCE DATA • Low leakage level typ. 500 fA • High gain ±vDS • Low cut-off voltage (max. 2.2 V

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

6v battery led circuit diagram

Abstract: YB1303 SC70-6 LED drive and keyboard control chip ILED200
Contextual Info: YB1303 Low Dropout LED Driver Description Features The YB1303 provides a simple solution for driving three channels of any color LEDs with current matching ability. The ultra low dropout LED driver features higher peak efficiency and very low shutdown current.

TRANSISTOR MARKING YB

Abstract: RN1701JE RN1706JE RN2701JE RN2702JE RN2703JE RN2704JE RN2705JE RN2706JE
Contextual Info: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm

Contextual Info: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm

Contextual Info: RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2901FE,RN2902FE,RN2903FE RN2904FE,RN2905FE,RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Unit: mm

TRANSISTOR MARKING YB

Abstract: RN1901FE RN1906FE RN2901FE RN2902FE RN2903FE RN2904FE RN2905FE RN2906FE
Contextual Info: RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2901FE, RN2902FE, RN2903FE RN2904FE, RN2905FE, RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. •

TRANSISTOR MARKING YB

Abstract: RN2901FE RN1901FE RN1906FE RN2902FE RN2903FE RN2904FE RN2905FE RN2906FE
Contextual Info: RN2901FE~RN2906FE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2901FE,RN2902FE,RN2903FE RN2904FE,RN2905FE,RN2906FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • • Unit: mm

TRANSISTOR MARKING YB

Abstract: RN1701JE RN1706JE RN2701JE RN2702JE RN2703JE RN2704JE RN2705JE RN2706JE
Contextual Info: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2701JE, RN2702JE, RN2703JE RN2704JE, RN2705JE, RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit in mm

TRANSISTOR MARKING YB

Abstract: RN2101FT RN2103FT TOSHIBA Transistor Silicon PNP Epitaxial Type RN1101FT RN1106FT RN2102FT RN2104FT RN2105FT RN2106FT
Contextual Info: RN2101FT~RN2106FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2101FT,RN2102FT,RN2103FT RN2104FT,RN2105FT,RN2106FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

TRANSISTOR MARKING YB

Abstract: RN1701JE RN1706JE RN2701JE RN2702JE RN2703JE RN2704JE RN2705JE RN2706JE
Contextual Info: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

Contextual Info: LESHAN RADIO COMPANY, LTD. Power Management dual transistors LUMF23NDW1T1G S-LUMF23NDW1T1G zApplication Power management circuit 6 zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 3) We declare that the material of product

LUMF23NDW1T3G

Abstract: transistors marking HJ mh 7489 789 marking
Contextual Info: LESHAN RADIO COMPANY, LTD. Power Management dual transistors zApplication Power management circuit LUMF23NDW1T1G 6 zFeatures 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half. 3) We declare that the material of product

Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS2802-1 ,PS2802-4 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE SOP PHOTOCOUPLER -N E P O C S e rie s - DESCRIPTION T he PS2802-1 and P S 2 8 0 2 -4 are o p tica lly c o u p le d iso lato rs silico n d a rlin g to n -co n n e cte d photo tra n sisto r in a p la stic SO P fo r