TRANSISTOR MARKING TE US6 Search Results

TRANSISTOR MARKING TE US6

Contextual Info: TOSHIBA HN3C03FU TOSHIBA TRANSISTOR r SILICON NPN EPITAXIAL PLANAR TYPE H N 3 fl 3 F II TV TUNER, UHF OSCILLATOR APPLICATION Unit in mm TV UHF RF AMPLIFIER APPLICATION 2.1 ± 0.1 COMMON COLLECTOR • Including Two Devices in US6 • Output Capacitance : C0b = 1.2pF (Typ.)

TRANSISTOR MARKING TE US6

Abstract: US6 KEC
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTX101U EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Including two devices in US6. Ultra Super mini type with 6 leads • Simplify circuit design. • Reduce a quantity of parts and manufacturing process.

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Abstract: transistor marking 1am RN1903 marking 1am
Contextual Info: TOSHIBA RN1901-RN1906 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1901, RN1902, RN1903, RN1904, RN1905, RN1906 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. 2 .1 ± 0.1 , L 2 5 ± Q .l Including Two Devices in US6

TRANSISTOR MARKING TE US6

Contextual Info: TOSHIBA RN1970,RN1971 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1970, RN1971 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 2.1 ± 0 .1 A N D DRIVER CIRCUIT APPLICATIONS. 1.25 ± 0 .1 “ — ;- 1 Including Two Devices in US6 (Ultra Super Mini Type 6 leads)

Contextual Info: TOSHIBA RN1967-RN1969 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1967, RN1968, RN 1969 U nit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT . ± 2 1 0.1 A N D DRIVER CIRCUIT APPLICATIONS. 1.25±0.1 1 Including Two Devices in US6 (Ultra Super Mini Type 6 leads)

Contextual Info: T O S H IB A RN1901 ~RN1906 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1901, RN1902, RN1903, RN1904, RN1905, RN1906 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 2 .1± 0.1 A N D DRIVER CIRCUIT APPLICATIONS. 1.25 Including Two Devices in US6

TRANSISTOR MARKING TE US6

Contextual Info: RN4910 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R M i q m Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2 .1 ± 0.1 ,L 2 5 ± Q .l • Including Two Devices in US6 (Ultra Super Mini Type with 6

marking IAY

Abstract: HN1C03FU
Contextual Info: TOSHIBA HN1C03FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HN1C03FU Unit in mm FOR MUTING AND SWITCHING APPLICATIONS. . ± 0.1 2 1 • • • Low on R e s is ta n c e : R q n 990 Including Two Devices in US6 (Ultra Super Mini Type with 6 leads)

Contextual Info: TOSHIBA HN3C03FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C03FU Unit in mm TV TUNER, UHF OSCILLATOR APPLICATION TV UHF RF AMPLIFIER APPLICATION 2.1 ± 0.1 COMMON COLLECTOR • Including Two Devices in US6 • Output Capacitance : C0fo = 1.2pF (Typ.)

Contextual Info: HN3C01 FU TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 C 0 1 FU Unit in mm TV TUNER, VHF CONVERTER APPLICATION TV VHF RF AMPLIFIER APPLICATION • • • 2-1 ± 0.1 Including Two Devices in US6 Low Reverse Transfer Capacitance : Cre = 0.4pF Typ.

Contextual Info: HN3C01 FU TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 3 C 0 1 FU Unit in mm TV TUNER, VHF CONVERTER APPLICATION TV VHF RF AMPLIFIER APPLICATION • • • 2-1 ± 0.1 Including Two Devices in US6 Low Reverse Transfer Capacitance : Cre = 0.4pF Typ.

Contextual Info: TOSHIBA RN4909 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R N i q n q Unit in mm 2.1± U.l SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. ,1.2 5 ±0.1 • Including Two Devices in US6 (Ultra Super Mini Type with 6

TRANSISTOR MARKING TE US6

Contextual Info: TOSHIBA RN4908 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R N i q n R SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm 2 .1 ± 0.1 ,L 2 5 ± Q .l • DI 6 Including Two Devices in US6 (Ultra Super Mini Type with 6

Contextual Info: TOSHIBA RN4907 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2 . 1± 0.1 .1,25 dz 0-1 • Including Two Devices in US6 (Ultra Super Mini Type with 6

TRANSISTOR MARKING TE US6

Contextual Info: SEM ICONDUCTOR KTX102U TE CHNICAL DATA EPIT A X IA L PLANAR PNP/NPN T R A N SIST O R GENERAL PURPOSE APPLICATION. FEATURES • Including tw o devices in US6. U ltra Super m ini type w ith 6 leads DIM • Sim plify circuit design. -2EEb • Reduce a quantity o f parts and m anufacturing process.

Contextual Info: TOSHIBA RN4904 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm 2 .1± 0.1 ,L 2 5 ± Q .l D6I Including Two Devices in US6 (U ltra Super Mini Type with 6

Contextual Info: TOSHIBA RN4903 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4903 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. 2 . 1± 0.1 1.25 ± 0 . 1. • Including Two Devices in US6 (Ultra Super Mini Type with 6

Contextual Info: TOSHIBA RN2967-RN2969 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2967, RN2968, RN2969 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm 2.1 ±0.1 1. 2 5 ± 0.1 • Including Two Devices in US6 (Ultra Super Mini Type with 6

Contextual Info: TOSHIBA RN2901-RN2906 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2901, RN2902, RN2903, RN2904, RN2905, RN2906 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm 2 .1 ± 0.1 .1,25 dz 0-1 • DI Including Two Devices in US6

Contextual Info: T O SH IB A R N 4902 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4902 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 2 . 1± 0.1 1.25 ± 0.1 • ZE- Including Two Devices in US6 (Ultra Super Mini Type with 6

Contextual Info: T O SH IB A RN4905 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4905 Unit in mm 2.1± 0.1 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. 1.25 ± 0.1 Including Two Devices in US6 (Ultra Super Mini Type with 6

Contextual Info: T O SH IB A RN4906 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4906 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm 2 . 1± 0.1 1.25 ± 0 . 1. • Including Two Devices in US6 (Ultra Super Mini Type with 6

Contextual Info: RN4910 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4910 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Unit in mm 2 . 1± 0.1 1.25 ± 0.1. • Including Two Devices in US6 (Ultra Super Mini Type with 6

"MARKING TE" US6

Abstract: 2301 mini transistor
Contextual Info: [3 ] Application Information 1. Overview 2. Device Marking [ 3 ] Application Information 1. Overview Toshiba B ias Resistor Transistors BR T s each contain a built-in base series resistor and baseem itter bias resistor. This helps you reduce the parts count in circuits to m iniaturize equipment