TRANSISTOR MARKING SA Search Results

Contextual Info: FJX3904 NPN Epitaxial Silicon Transistor Feature 3 • General-Purpose Transistor 2 1 SC-70 1. Base 2. Emitter 3. Collector Package Marking and Ordering Information Device Item Device Marking Package Packing Method Qty pcs FJX3904TF S1A SC-70 TAPE & REEL

transistor marking 4D

Abstract: PNP 400V MMBTA44 MMBTA94
Contextual Info: MMBTA94 PNP Silicon -400V, -0.1A, 350mW Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High Voltage Transistor A L 3 3 MARKING C B Top View 1 Product Marking Code

npn transistor 0.1A 400V sot-23

Abstract: npn high voltage transistor 500v sot23 vbe 10v, vce 500v NPN Transistor top marking 3d npn NPN VCEO 500V sot23 MMBTA44 3D NPN 400V TRANSISTOR MARKING 3D sot-23 Marking 3D
Contextual Info: MMBTA44 NPN Silicon 500V, 0.1A, 350mW Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High Voltage Transistor A L 3 3 MARKING C B Top View 1 Product Marking Code MMBTA44

UMT222A

Abstract: TRANSISTOR 1P transistors marking 1p BC847B BC857B MMST2222A PN2222A T116 B128D MARKING 5D NPN
Contextual Info: BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions Unit : mm zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking

LMBT5551DW1T1G

Abstract: 1N914 LMBT5551DW1T3G
Contextual Info: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽ We declare that the material of product compliance with RoHS requirements. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G

stc403

Abstract: transistor marking MH STC403 TO-220F
Contextual Info: STC403 Semiconductor NPN Silicon Transistor Features • Power Transistor General Purpose application • Low saturation voltage : VCE SAT =0.4V Typ. • High Voltage : VCEO=60V Min. Ordering Information Type NO. STC403 Marking STC403 Package Code TO-220F

CQ 523

Abstract: MARKING CODE cq sot-89
Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411KXLT1G FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽPb-Free package is available 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking SOT– 23 TO–236AB Shipping

Contextual Info: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽPb-Free package is available. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G G1 3000/Tape&Reel LMBT5551DW1T3G G1 10000/Tape&Reel

d82 sot23

Abstract: D882* transistor
Contextual Info: UTC D882SS NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to B772SS 2 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 3 MARKING SOT-23

2FK transistor

Contextual Info: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units

2tk transistor

Contextual Info: MMBT4403K PNP Epitaxial Silicon Transistor MMBT4403K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO

L2SC2411KRLT1G

Abstract: L2SC2411KPLT1 L2SC2411KPLT1G L2SC2411KQLT1 L2SC2411KQLT1G L2SC2411KRLT1 L2SC2411KLT1
Contextual Info: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411K*LT1 FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽPb-Free package is available 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT– 23 TO–236AB Marking Shipping

BULB128D-BT4

Contextual Info: BULB128D-BT4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-BT4 BULB128DB Tape & Reel STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS

stc403

Abstract: STC403D
Contextual Info: STC403D Semiconductor NPN Silicon Transistor Features • Power Transistor General Purpose application • Low saturation voltage : VC E S A T =0.4V Max. • High Voltage : VC E O =60V Min. Ordering Information Type NO. STC403D Marking Package Code STC403

Contextual Info: UTC MMBT5088 / MMBT5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50mA. 2 MARKING MMBT5088 1 1Q 3 MARKING(MMBT5089)

Contextual Info: UTC MMBTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA14 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1N SOT-23 1: EMITTER 2: BASE

SO642

Abstract: SO692
Contextual Info: SO642 SMALL SIGNAL NPN TRANSISTOR • ■ ■ ■ Type Marking SO 642 N91 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER PNP COMPLEMENT IS SO692 2 3

transistor MAR 819

Abstract: transistor MAR 543 sl2 357 BFS17
Contextual Info: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4

Contextual Info: MMBT3906K PNP Epitaxial Silicon Transistor MMBT3906K PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage

M8050

Contextual Info: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 C B Top View MARKING 1 Product Marking Code M8050 Y11

2SA1179

Abstract: transistor marking 3k
Contextual Info: 2SA1179 -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High breakdown voltage A L 3 3 C B Top View 1 MARKING 1 K Product Marking Code

BC648B

Contextual Info: Transistors BC847B NPN General Purpose Transistor I BC847B •Feature« •E x te rn a l dimensions Units : mm 1 > BVceo<45V (lc=1m A ) 2 ) Complements the BC857B. BC847B •P a c k a g e , marking, and packaging specifications Type BC847B Package Marking

M8050

Abstract: m8050 NPN equivalent M8050 equivalent
Contextual Info: M8050 40V, 0.8A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Power dissipation A L 3 3 MARKING C B Top View 1 Product Marking Code M8050 Y11

marking C3Z

Abstract: marking C3Z SOT23 CMPTA44 npn 400V sot-23
Contextual Info: Central CMPTA44 TM Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE: C3Z