TRANSISTOR MARKING PL Search Results

Contextual Info: 2SC3547A silicqn npn epitaxial planar type transistor TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR • Transition Frequency is High and Dependent on C urrent Excellently. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: 2SC4116 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 4 1 16 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • High Voltage and High Current : VcEO = 50V, Ic = 150mA (Max.) Excellent hpg Linearity : hpE (Ic = 0.1mA) / hpg (Ic = 2mA) = 0.95 (Typ.)

Contextual Info: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)

Contextual Info: TOSHIBA HN2C11FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 1 FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm 2.1 + 0.1 • Including Two Devices in U S6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2sc5464

Contextual Info: T O SH IB A 2SC5464 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5464 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 ie l 2 = 12dB f= lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: 2SC3607 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. 3.6 MAX . • Low Noise Figure, High Gain N F = l.ld B , |S2leP = 9-5dB f= 1.7 MAX. jg L MAXIMUM RATINGS (Ta = 25°C CHARACTERISTIC Collector-Base Voltage

Contextual Info: TO SHIBA 2SC4394 Transistor Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications F e a tu re s • L o w N oise Figure, H igh Gain • N F = 1.1 d B , IS21el2 = 11 dB f= 1GHz A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )

Contextual Info: TO SHIBA TENTATIVE HN9C16FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HNQfUFT • ■ u m ■ ■ Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6

Contextual Info: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz

BENT LEAD transistor TO-92 Outline Dimensions

Abstract: 2SC2712 equivalent 4TE12 diode ssc J Fet marking 2 AW 2SC2873 equivalent 90105 toshiba ultrasonic atomizing SMD TRANSISTOR MARKING 5c
Contextual Info: 5. PA C K A G E FO R M S 5.1 PACKAGE FORM SELECTION TABLE 5.1.1 SUPER-MINI DEVICES S-MINI (SC-59 , SMQ (SC-61), SMV, SM6) PACKAGING FORM PACKAGE SPECIFI­ CATION OUTLINE Pack PACKAGE UNIT - e TE85L Taping EXTERIOR Unit: mm » » » 3000 pcs/ Reel TE85R TE85N

"MARKING TE" US6

Abstract: 2301 mini transistor
Contextual Info: [3 ] Application Information 1. Overview 2. Device Marking [ 3 ] Application Information 1. Overview Toshiba B ias Resistor Transistors BR T s each contain a built-in base series resistor and baseem itter bias resistor. This helps you reduce the parts count in circuits to m iniaturize equipment

Contextual Info: fl TOSHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M OSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES A N D TOOLS NOTE BOOK PC • • • • INDUSTRIAL APPLICATIONS Unit in mm 8 5 fl fi H fl Low Drain-Source ON Resistance : RßS (ON) ~ lömO (Typ.)

2SK2679

Abstract: 2SK2679(T)
Contextual Info: TO SHIBA 2SK2679 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2679 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm

marking pd

Contextual Info: T O SH IB A 2SJ360 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ360 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 1.6MAX

Contextual Info: TOSHIBA 2SK2841 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2841 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS . 10.3MAX.

diode U1J

Contextual Info: TOSHIBA 2SK2201 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M O S V 2SK2201 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE APPLICATIONS 4V Gate Drive

DIODE ED 34

Contextual Info: TO SHIBA 2SK2350 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2350 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ± 0 .3

Contextual Info: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)

TLP508

Abstract: thyristor 072 0043 sl 1008 transistor thyristor st 103
Contextual Info: 9. Reliability 9.1 General In recent years, as the application fields for photo couplers expand, more discussions are being made on reliability. For reliability improvement, it is insufficient to perform strinct process management and to have reliability tests such as life test and environmental tests. It is necessary to

Contextual Info: TO SHIBA 2SK2744 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2744 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive

1117F

Contextual Info: T O S H IB A RN1112F,RN1113F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS R •m N ■ 1117F 'm m m m m g R N 1 1 1 3 F■ m m m 'm m m m m tr SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors

l20pF

Contextual Info: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2. 1+0. 1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF Typ. • Low Noise Figure.

Contextual Info: TOSHIBA RN2110F,RN2111F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN711Í1F RN7111F • m ■ 'm g ■ m ■ 'm ■ ■ ■ ■■ SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors

Contextual Info: TOSHIBA R N 2 1 0 7 F -R N 2 1 0 9 F TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2107F, RN2108F, RN2109F SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design