TRANSISTOR MARKING JB Search Results

transistor marking 3em

Abstract: MMBTH10LT1 mmbth10 MMBTH10-4LT1
Contextual Info: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc

Contextual Info: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc

mps 1049

Abstract: JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23
Contextual Info: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS

transistor marking 3em

Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2
Contextual Info: MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS

transistor t1a

Abstract: t1A Transistor MARKING marking code t1a t1a transistor transistor t1A 25 SMT T1A transistor T1n
Contextual Info: UMT1N IMT1A Transistor, dual, PNP Features Dimensions Units : mm • available in UMT6 (UM6) and SMT6 (IMD, SC-74) packages • package marking: U M T1N and IMT1 A; T1 UMT1N (UMT6) g .0 i0 .2 Fr^Ÿl >±0.1 (2) JBHHf IS 0.65 I • package contains two independent

Contextual Info: BEE D • ö53b32Q QQ175SS b WÊSIP NPN Silicon Darlington Transistor SMBT 6427 _ SIEMENS/ SPCLi SEMICONDS T-Z'l -X*? _ • For general amplifier applications • High collector current • High current gain Type Marking Ordering code for versions in bulk

Contextual Info: T e m ic S 897 T TELEFUNKEN Semiconductors Silicon NPN planar RF transistor Applications High gain linear broadband RF amplifier. Features • • Small feedback capacitance Low noise figure • Low cross modulation Dimensions in mm i aoa • Marking: 897

Contextual Info: 32E D • 023b3S0 001731e b H S I R NPN Silicon Switching Transistor _ SIE M E N S / SPCLi SEMICONDS -p. 3g- j| SXT 3904 _ • High current gain: 0.1 to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering code for

transistor marking c y um-1

Abstract: MU MARKING CODE siemens SD 222 M BSP 229 diode marking 226
Contextual Info: SIEMENS BSP 171 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • Avalanche rated • ^GS th = -0.8.-2.0 V Type b -1.7 A BSP 171 VDS -60 V Type BSP 171 Ordering Code Q67000-S224 ^DS(on) Package Marking 0.35 n SOT-223

SANYO sh2a027-1

Abstract: 3116-SIP12S ic 4040 MPP36S SIP14H 3047a 3151-QIP100E 3149-DIP48S 3037A-DIP20H 3029A-DIP28S
Contextual Info: PACKAGE DIMENSIO Package dimensions for all o f Sanyo's semicondustor devices are provided below. Dimensions are all given in millimeters and those which are not specified as min or max are typical values. Unit: mm 10.9 Package marking is not provided. Refer to the transistor ca ta lo g for electrical connection and lead

JB TRANSISTOR SMD MARKING CODE

Abstract: Q62702-S217
Contextual Info: BSS 296 Infineon t« c h n o lo g t« s SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •^ G S th 3 = 0.8.2.0V Pin 1 VPTO5540 Pin 2 G (/> Type k> ^ D S (o n ) Package Marking 0.8 A 0.8 fl TO-92 SS 296 BSS 296 100 V

Contextual Info: Philips Semiconductors Product sgee ification NPN general purpose transistor FEATURES BC817W; BC818W PIN CONFIGURATION • High current • S -m ini package. JBi_ EL 1 DESCRIPTION NPN transistor in a plastic SOT323 SC70 package. PINNING - SOT323 PIN 1 'op view

TO263 7 1 LAND PATTERN

Contextual Info: AP1122 1A LOW DROPOUT POSITIVE REGULATOR General Description Features • • • • • • • • • AP1122 is a low dropout positive fixed-mode regulator with 1A output current capability. The product is specifically designed to provide well-regulated supply for low voltage IC applications such

Contextual Info: AP1122 1A LOW DROPOUT POSITIVE REGULATOR General Description Features • • • • • • • • • 1.3V maximum dropout at full load current Fixed 1.2V±2% output voltage Fast transient response Output current limiting Built-in thermal shutdown Good noise rejection

AP1122EG-13

Abstract: AP1122EL-13 TO252-3L AP1122 AP1122DG-13 AP1122DG-U AP1122DL-13 AP1122DL-U AP1122EG-U AP1122EL-U
Contextual Info: AP1122 1A LOW DROPOUT POSITIVE REGULATOR General Description Features • • • • • • • • • 1.3V maximum dropout at full load current Fixed 1.2V± 2% output voltage Fast transient response Output current limiting Built-in thermal shutdown Good noise rejection

marking FR PNP SOT323

Abstract: BF824W
Contextual Info: Philips Semiconductors Product specification PNP RF transistor BF824W FEATURES • S-mini package. H= FI 1 c APPLICATIONS It is especially Intended for RF stages in FM front-ends in common base configuration. Ü» Top view DESCRIPTION PNP transistor in a plastic SOT323

BFG55A

Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
Contextual Info: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

jd 1803 IC

Abstract: jd 1803 jd 1803 4 pin RT9167-33CB 20cb jd 1803 b ke marking transistor marking RT9167 RT9167-20CB RT9167-27CBR
Contextual Info: RT9167/A Low-Noise, Fixed Output Voltage, 200mA/500mA LDO Regulator General Description Features The RT9167/A is a 200mA/500mA low dropout and z Stable with Low-ESR Output Capacitor low noise micropower regulator suitable for portable z Low Dropout Voltage 220mV and 200mA

2SA1022

Abstract: 2SC2295
Contextual Info: Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1022 Unit: mm +0.2 2.8 –0.3 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 +0.2 ● 2.9 –0.05 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT.

2SC3936

Contextual Info: Transistor 2SC3936 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 2.1±0.1 • Features 0.3–0 0.65 1 0.65 1.3±0.1 +0.1 0.425 3 Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage

2SA1790

Abstract: 2SC4626
Contextual Info: Transistor 2SC4626 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1790 Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment

2SC4655

Contextual Info: Transistor 2SC4655 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. SS-Mini type package, allowing downsizing of the equipment

sc 107 transistor

Abstract: 2SC2778 npn, transistor, sc 107 b
Contextual Info: Transistor 2SC2778 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm +0.2 2.8 –0.3 1.45 0.95 3 +0.1 +0.2 0.65±0.15 1 0.95 2.9 –0.05 ● 0.65±0.15 Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. Mini type package, allowing downsizing of the equipment and

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2755 RF AMP, FOR VHF TV TUNER SO T-23 • LOW NF, HIGH Gp« • NF=2.0dB Typ. Gpe=23dB Typ. f=200MHr • FORWARD AGC CAPABILITY TO 30 dB ABSOLUTE MAXIMUM RATINGS (T,=25°C) Characteristic Rating Symbol Collector-Base Voltage