TRANSISTOR MARKING FL Search Results
TRANSISTOR MARKING FL Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 5962-8672601EA |
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Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) |
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| 54F151/BEA |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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| 54F151/B2A |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A) |
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| 5962-8672601FA |
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Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA) |
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| ICL7667MJA/883B |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
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TRANSISTOR MARKING FL Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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BC648BContextual Info: Transistors BC847B NPN General Purpose Transistor I BC847B •Feature« •E x te rn a l dimensions Units : mm 1 > BVceo<45V (lc=1m A ) 2 ) Complements the BC857B. BC847B •P a c k a g e , marking, and packaging specifications Type BC847B Package Marking |
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BC847B BC857B. 0Dlb713 O-220FN O-220FN O220FP T0-220FP, BC648B | |
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Contextual Info: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. E B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings |
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MMBT2222AT OT-523F MMBT2222AT | |
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Contextual Info: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings |
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MMBT2222AT MMBT2222AT OT-523F | |
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Contextual Info: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • Suitable for general switching & amplification • Well suited for portable application E B Marking : A06 |
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MMBT3906T OT-523F MMBT3904T MMBT3906T | |
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Contextual Info: CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N -P-N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-emitter voltage Collector current DC |
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CMBT4401 D000A3b | |
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Contextual Info: MMBT3904T NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • Suitable for general switching & amplification • Well suited for portable application E B Marking : A04 |
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MMBT3904T OT-523F MMBT3906T MMBT3904T | |
CC5401Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications. |
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CC5401 C-120 CC5401 | |
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Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications. |
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CC5401 C-120 | |
BULB128D
Abstract: BULB128D-1
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BULB128D-1 BULB128D O-262) BULB128D BULB128D-1 | |
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Contextual Info: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol |
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FJX2222A 325mW OT-323 | |
BULB128D-BT4Contextual Info: BULB128D-BT4 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ Ordering Code Marking Shipment BULB128D-BT4 BULB128DB Tape & Reel STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS |
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BULB128D-BT4 BULB128DB O-263) BULB128D-BT4 | |
transistor s1p
Abstract: MARKING S1P S1P transistor FJX2222A ESBC Fairchild dual NPN silicon transistor
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FJX2222A 325mW OT-323 transistor s1p MARKING S1P S1P transistor FJX2222A ESBC Fairchild dual NPN silicon transistor | |
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Contextual Info: KST3904 NPN Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 1A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage |
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KST3904 OT-23 | |
NCC 5551
Abstract: CC5551 NCC5551 transistor 9AW marking 9AW 5551 transistor equivalent transistor bce 50 53 transistor marking wt
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CC5551 C-120 CC5551AI230801 NCC 5551 CC5551 NCC5551 transistor 9AW marking 9AW 5551 transistor equivalent transistor bce 50 53 transistor marking wt | |
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Contextual Info: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage |
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KST3906 OT-23 | |
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Contextual Info: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.48 0.38 i 13 . •-■!— ! Pin configuration 1 • 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _K02 0.60 0.40 0.89* 2.00 |
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CMBT4403 23A33T4 | |
KSC2982Contextual Info: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking |
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KSC2982 OT-89 KSC2982 | |
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Contextual Info: KST42 / KST43 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST42MTF 1D SOT-23 3L Tape and Reel KST43MTF 1E SOT-23 3L Tape and Reel |
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KST42 KST43 OT-23 KST42MTF OT-23 KST43MTF | |
113 marking code PNP transistor
Abstract: 113 marking code transistor 2SB852K T146 transistor PNP transistor 2SB
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2SB852K SC-59) 2SB852K; 2SB852K 2SB852K, 113 marking code PNP transistor 113 marking code transistor T146 transistor PNP transistor 2SB | |
318M
Abstract: LL1608-FH MBC13900 MBC13900T1 marking r4 SOT343 SOT343 lna
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MBC13900/D MBC13900 OT-343) MBC13900T1 OT-343 MBC13900 SC-70 318M LL1608-FH MBC13900T1 marking r4 SOT343 SOT343 lna | |
MARKING W1 AD
Abstract: CC5401
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CC5401 C-120 MARKING W1 AD CC5401 | |
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Contextual Info: SIEMENS BCR 146W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=47k£2, R2=22k£2 FL U TT Pin Configuration Ordering Code WLs UPON INQUIRY Package UJ II CM Marking BCR 146W |
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OT-323 0535b05 | |
TRANSISTOR S 838
Abstract: 339 marking code transistor TR13 339 marking code transistor manual
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EIA-481-2-A TRANSISTOR S 838 339 marking code transistor TR13 339 marking code transistor manual | |
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Contextual Info: 32E D • fl23b320 0017Eflfi T « S I P PNP Silicon Transistor SMBT A 70 SIEMENS/ SPCL-, SEMICONDS ' *7_ • For AF input stages and driver applications • High current gain • Low coilector-emitter saturation voltage B Type Marking Ordering code for |
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fl23b320 0017Eflfi | |