TRANSISTOR MARKING FL Search Results

Contextual Info: CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N -P-N transistor Marking CMBT4401 = 2X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-emitter voltage Collector current DC

KSC2982

Contextual Info: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking

MARKING CODE Zi sot363

Abstract: WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS
Contextual Info: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit •Two galvanic internal isolated Transistors in one package ■Built in bias resistor (R1=47k£i, R2=47kQ) Type Marking Ordering Code Pin Configuration

Marking W1s

Abstract: bft92 w1s sot23
Contextual Info: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Type Marking Ordering Code

xds pnp

Abstract: Q62702-C2383 xds transistor marking XDS sot23 Bcr555 SOT-23 marking XDs
Contextual Info: SIEMENS BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor Rn = 2.2kii, R2 = 10kii Type Marking Ordering Code Pin Configuration BCR 555 XDs 1=B Q62702-C2383 Package 2=E 3=C SOT-23

BUl312

Abstract: BUL312FH
Contextual Info: BUL312FH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code BUL312FH „ „ „ „ „ „ „ Marking BUL312FH Shipment Tube HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED

Contextual Info: SIEMENS BFQ 75 PNP Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA. • Complementary type: BFQ 72 NPN . ESD. Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

TRANSISTOR MARKING YB

Abstract: sot36 3904P marking code Yb Transistor 70 sot3-6
Contextual Info: SIEMENS SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package -Q - Marking on SOT-3 6 3 package (for example W1sj

Q62702C2262

Contextual Info: SIEMENS BCR 183 PNP Silicon Digital Transistor •Switching circuit, inverter, interface circuit, driver circuit «Built in resistor Rt = 10k£2, R2 = 10kiî Type Marking Ordering Code BCR 183 WMs Pin Configuration Q62702-C2262 1=B Package 2=E 3=C SOT-23

2SA1036K

Abstract: transistor surface mount to 2SA1577 2SC2411K 2SC4097 T106 T146 transistor PNP
Contextual Info: 2SA1036K 2SA1577 Transistor, PNP Features Dimensions U n its: mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1036K and 2SA1577; H-*, where ★ is hFE code • • • large collector current: ^C(max) = —500 mA

TRANSISTOR marking 789 code

Abstract: PM744
Contextual Info: SIEMENS BCR 523 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=1kQ,R2=10kQ PM744 Type Marking Ordering Code Pin Configuration BCR 523 XGs C62702-C2487 1=B Package 2=E 3=C SOT-23

519 MARKING CODE

Abstract: 519 SOT23
Contextual Info: SIEMENS BCR 519 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7k£2 FI nr let Ordering Code Pin Configuration XKs UPON INQUIRY 1=B Package m Marking BCR 519 fO II Type 3=C

D1733

Abstract: 2SD1733F5 MARKING CODE f5 transistor BA 14 2SB1181 TA-10-03 2SD1733FS BA, TRANSISTOR
Contextual Info: 2SD1733F5 Transistor, NPN Features • available in CPT F5 SC-63 package • package marking: D1733-AQ, where ★ is hFE code and Q is lot number • high breakdown voltage and large current capacity: VCE0 = 80 V, lc = 1A • low collector saturation voltage

BFR90

Contextual Info: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration

BSS284

Abstract: marking BSs sot23 siemens
Contextual Info: SIEMENS BSS 284 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-1.6 V Pin 2 Pin 1 G Type Vbs BSS 284 -50 V Type BSS 284 Ordering Code Q62702-S299 b -0.13 A flbS(on} 100 Pin 3 D S Package Marking SOT-23

Contextual Info: FMMT549 PNP Low Saturation Transistor Features • ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continuous. • Sourced from process PB. 3 2 SuperSOT-23 1 Marking : 549 1. Base 2. Emitter 3. Collector

BJ 027

Abstract: 2SB1427 T100 transistor PNP marking BJ pnp SOT89
Contextual Info: 2SB1427 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1427; B J*, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lc/lB = - 1 A/-50 mA

Contextual Info: SIEMENS BF 599 NPN Silicon RF Transistor • Common emitter IF/RF amplifier • Low feedback capacitance due to shield diffusion Type Marking Ordering Code tape and reel BF 599 NB Q62702-F979 Pin Configuration 2 1 3 E B Package1) SOT-23 C Maximum Ratings

Marking TRANSISTOR 737

Contextual Info: SIEMENS BCR 196 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Rì=47kiì, R2=22tóì BCR 196 WXs Pin Configuration UPON INQUIRY 1=B Package O II CO Marking Ordering Code LU II

transistor 7S 732

Abstract: K 192 A transistor
Contextual Info: SIEMENS B C R 192 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R 1=22kii, R2=47kii Type Marking Ordering Code Pin Configuration B C R 192 W Ps 1=B Q62702-C2265 Package 2=E 3=C SOT-23

SOT 23 CODE MCS

Abstract: transistor marking MCs TP 1437 NPN marking MCs CODE MCS sot-23 Transistor MARKING CODE ZG SOT 23 marking MCS
Contextual Info: SIEMENS BFS 17P NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA • CECC-type available: CECC 50002/248. Marking Ordering Code Pin Configuration BFS17P MCs 1 =B Q62702-F940 Package fO li m Type 3=C SOT-23

d 998 transistor circuit

Contextual Info: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 4 1 2 3 Package1) B F 998

bss84

Abstract: BSS84 E6327 marking BSs sot23 siemens BSS84 siemens
Contextual Info: SIEMENS BSS84 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Pin 1 Pin 2 G Type BSS84 Vos -50 V Type BSS84 BSS84 Ordering Code Q62702-S568 Q67000-S243 b -0.13 A WDS(on) 10Q Pin 3 S Package Marking

NXP SMD TRANSISTOR MARKING CODE

Abstract: PMBT3906VS smd "code rc" transistor transistor smd code marking 102 ZI Marking Code transistor
Contextual Info: PMBT3906VS 40 V, 200 mA PNP/PNP switching transistor Rev. 01 — 20 August 2009 Product data sheet 1. Product profile 1.1 General description PNP/PNP double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device SMD plastic package.