TRANSISTOR MARKING E2 Search Results

1df transistor

Abstract: FJV42
Contextual Info: FJV42 NPN High Voltage Transistor 3 2 1 SOT-23 Marking: 1DF 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 350 V VCEO Collector-Emitter Voltage 350 V VEBO

KSB1121

Abstract: KSD1621
Contextual Info: KSD1621 NPN Epitaxial Silicon Transistor High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 Marking 1 6 2 1 P Y W W SOT-89 1 Weekly code Year code

FJC690

Abstract: FJC790
Contextual Info: FJC790 PNP Epitaxial Silicon Transistor Camera Strobe Flash Application • Complement to FJC690 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 7 9 Y W W SOT-89 1 Weekly code Year code hFE 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings

k3n transistor

Abstract: K3n td sot transistor k3n J-STD-020A MMDT3906 MMDT3906-7 MMDT3906-7-F
Contextual Info: MMDT3906 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMDT3906 Features • · · · C2 · · · · · · · E2 E1 B2 C1 G H Case: SOT-363, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A

NSS20201MR6T1G

Contextual Info: NSS20201MR6T1G 20 V, 3 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

0118 transistor

Contextual Info: NSS30071MR6T1G 30 V, 0.7 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

1C31EG

Abstract: 617 300
Contextual Info: NSS1C301ET4G 100 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where

NSS40600CF8T1G

Contextual Info: NSS40600CF8T1G 40 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

NSS12600CF8T1G

Contextual Info: NSS12600CF8T1G 12 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

NSS20200LT1G

Contextual Info: NSS20200LT1G 20 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

Contextual Info: NSS12501UW3T2G 12 V, 7.0 A, Low VCE sat NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

Contextual Info: NSS1C200MZ4 100 V, 2.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

NSS12200LT1G

Contextual Info: NSS12200LT1G 12 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

WDFN3

Abstract: NSS40500UW3T2G
Contextual Info: NSS40500UW3T2G 40 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

NSS12500UW3T2G

Contextual Info: NSS12500UW3T2G 12 V, 8.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications

Contextual Info: NSS40301MZ4, NSV40301MZ4T1G Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed

NSV60600MZ4

Abstract: NSV60600
Contextual Info: NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G 60 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed

transistor BC636

Abstract: BC635 BC636 BC636BU BC636TA BC636TAR BC636TF BC636TFR
Contextual Info: BC636 PNP Epitaxial Silicon Transistor BC636 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC635 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter

bc640

Abstract: transistor bC640 BC640BU BC639 BC640TA BC640TAR BC640TF BC640TFR transistor c 458 bc640 pnp
Contextual Info: BC640 PNP Epitaxial Silicon Transistor BC640 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC639 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter

FJE5304D

Contextual Info: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application

transistor marking s1a

Abstract: TRANSISTOR S1A FJX3904 FJX3904TF 130010 TRANSISTOR I22 marking
Contextual Info: FJX3904 NPN Epitaxial Silicon Transistor • General Purpose Transistor 3 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCES Collector-Emitter Voltage

C1008Y TRANSISTOR

Abstract: c1008y C1008YC transistor BU 102 KSC1008 NPN transistor to-92 "high gain" C1008O NPN transistor 500ma TO-92 KSA708 KSC1008C
Contextual Info: KSC1008 tm NPN Epitacial Silicon Transistor Features • Low frequency amplifier medium speed switching. • High Collector-Base Voltage : VCBO=80V. • Collector Current : IC=700mA • Collector Power Dissipation : PC=800mW TO-92 • Suffix “-C” means Center Collector 1.Emitter 2.Collector 3.Base

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UD12K DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTOR „ FEATURES * Both the DTA144E chip and DTC144E chip in a SOT-363 package. * NPN/PNP silicon transistor(Built-in resistor type) „ EQUIVALENT CIRCUIT 6 5 R1 4 R2

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UG9K DUAL TRANSISTOR COMPOUND TRANSISTORS UG9K  DESCRIPTION As a compound transistor with resistor, the UTC UG9K is for switching application.  FEATURES * Silicon epitaxial type * The internal tow transistor elements are independent.