TRANSISTOR MARKING CODE G1 Search Results

BUL312FH

Contextual Info: BUL312FH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code BUL312FH Marking BUL312FH Shipment Tube HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125 °C

BUL742C

Contextual Info: BUL742C HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code BUL742C • ■ ■ ■ Marking BUL742C Package / Shipment TO-220 / Tube HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED

BUl312

Abstract: BUL312FH
Contextual Info: BUL312FH HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code BUL312FH „ „ „ „ „ „ „ Marking BUL312FH Shipment Tube HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED

Contextual Info: 32E D • 023b3S0 001731e b H S I R NPN Silicon Switching Transistor _ SIE M E N S / SPCLi SEMICONDS -p. 3g- j| SXT 3904 _ • High current gain: 0.1 to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering code for

c22e

Abstract: Q62702-F944 transistor marking 550 g22E y21e QBF550 transistor BF 450
Contextual Info: PNP Silicon RF Transistor ● For common emitter amplifier stages up to 300 MHz ● For mixer applications in AM/FM radios and VHF TV tuners ● Low feedback capacitance due to shield diffusion ● Controlled low output conductance BF 550 Type Marking Ordering Code

marking code g1s

Abstract: Q62702-F1129 D 998 TRANSISTOR
Contextual Info: Silicon N Channel MOSFET Tetrode BF 998 Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO

transistor fn 155

Contextual Info: 2SB1424 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1424; AE-fc, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lC/lB ——2 A/—0.1 A

Contextual Info: 2SB1184F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: B1184^Q, where ★ is hFE code and □ is lot number Dimensions (Units: mm) • low collector saturation voltage, typically VCE(Sat) = ~°-5 v f° r 6.5 ±0.2 Ò

Contextual Info: SIEM ENS BF 988 Silicon N Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code BF 988 - Q62702-F36 Pin Configuration 2 4 1 3 S D Û2 Package1

Silicon N Channel MOSFET Tetrode

Abstract: Q62702-F1772 marking code g1s BF 2000W
Contextual Info: BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet 3 • Short-channel transistor 4 with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 2 1 Type Marking Ordering Code BF 2000W NDs Q62702-F1772 VPS05605 Pin Configuration

marking code g1s

Abstract: Q62702-F1771 VPS05178 marking G2s
Contextual Info: BF 2000 Silicon N Channel MOSFET Tetrode Target data sheet 3 • Short-channel transistor with high S/C quality factor 4 • For low-noise, gain-controlled input stages up to 1 GHz 2 1 Type Marking Ordering Code Pin Configuration BF 2000 NDs 1=S Q62702-F1771

d 998 transistor circuit

Contextual Info: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 4 1 2 3 Package1) B F 998

a31s

Abstract: Silicon N Channel MOSFET Tetrode
Contextual Info: SIEMENS BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code Package II 5 CO h 1= D CO Q62702-F1772 CM BF 2000W NDs

CSG3001-18A04

Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Contextual Info: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power

Transistor p1f

Abstract: MARKING P1F ON MARKING P1F p1f on P1F MARKING marking code P1F A114 A115 FPD1000AS FPD4000AS
Contextual Info: FPD4000AS 2.5W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 34.5 dBm Output Power (P1dB) ♦ 12 dB Power Gain (G1dB) ♦ 45 dBm Output IP3 ♦ 8V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website

transistor g23 mosfet

Abstract: FZj 111 TRANSISTOR BC 137 transistor g23 3576 transistor n channel mosfet marking Bc TRANSISTOR MARKING CODE A2S bf996 marking A1S TRANSISTOR SOT-23 marking g23
Contextual Info: TELEFUNKEN EL EC TR O N I C IALGG BF 996 Marked with: M 96 •¡mmiFMlMIN] electronic Creative Technofogies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mixerstages especially or UHF-tuners Features: • Integrated Gate protection diodes

TSC5302DCH

Abstract: TSC5302DCP DIODE G14
Contextual Info: TSC5302D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 2A 1.1V @ IC=1A, IB=0.25A Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation

C5 MARKING TRANSISTOR

Abstract: TSC136L NPN Silicon Power Transistor DPAK NPN Transistor 1.5A 400V 18BSC sot251 b09 transistor
Contextual Info: TSC136L High Voltage NPN Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 2A VCE(SAT) Features 0.6V @ IC / IB = 1.5A / 0.5A Block Diagram ● High Voltage ● High Speed Switching

transistor G11

Abstract: to-126 HIGH SPEED SWITCHING transistor g11 transistor NPN Transistor 10A 400V NPN Transistor 1A 400V to - 92 to-126 npn switching transistor 400v d 772 transistor
Contextual Info: TS13003 High Voltage NPN Transistor TO-92 TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC 1.5A VCE SAT Features 1V @ IC =0.5A, IB =0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

marking c08

Abstract: C08 marking 250V transistor npn 2a BM 0228 marking code C5 power transistor Ic 4A NPN to - 251 1A MARKING CODE C5 MARKING TRANSISTOR marking code B2 NPN Silicon Power Transistor DPAK
Contextual Info: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

Transistor 4515

Abstract: CF300 transistor D 4515 lm 4580 Telefunken u 237 sot-23 MARKING CODE ZA SY 180/4 TRANSISTOR BC 414 W-25 CF-300
Contextual Info: TELEFUNKEN ELECTRONIC 0029426A E G CORP Û1C D • fl^EDGTb 000535*1 4 D \ 8ÏC 0 53 59~ CF 300 IFGlGJiiFOJMllXIK] electronic Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;

transistor Bf 966

Abstract: LM 3558 transistor k 3562 B1412-1 G28 marking code sot 23 BF966 mosfet bf 966 G28 SOT-23 transistor G28 k 3561 MOSFET
Contextual Info: TELEFUNKEN ELECTRONIC ¥ ilL ilF O *lK l electronic 61C D • S^Dmb '7 s 3 / - 2 - S T ' 00052b2 0 BIAL66 BF 9 6 6 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners

PHEMT marking code a

Abstract: FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A
Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

transistor P2F

Abstract: p2f 250 PHEMT marking code a p2F 45 FPD2000AS MIL-HDBK-263 40 P1dB 2W transistor marking code 1325
Contextual Info: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz