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    TRANSISTOR MARKING CODE 325 Search Results

    TRANSISTOR MARKING CODE 325 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA
    Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) PDF Buy
    54LS190/BEA
    Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy
    5962-8672601EA
    Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) PDF Buy
    5962-8672601FA
    Rochester Electronics LLC Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA) PDF Buy

    TRANSISTOR MARKING CODE 325 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    xds pnp

    Abstract: Q62702-C2383 xds transistor marking XDS sot23 Bcr555 SOT-23 marking XDs
    Contextual Info: SIEMENS BCR 555 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor Rn = 2.2kii, R2 = 10kii Type Marking Ordering Code Pin Configuration BCR 555 XDs 1=B Q62702-C2383 Package 2=E 3=C SOT-23


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    10kiiq62702-c2383ot-23xds pnp+4xds transistormarking xds sot23bcr555sot-23 marking xds PDF

    TRANSISTOR marking 789 code

    Abstract: PM744
    Contextual Info: SIEMENS BCR 523 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1=1kQ,R2=10kQ PM744 Type Marking Ordering Code Pin Configuration BCR 523 XGs C62702-C2487 1=B Package 2=E 3=C SOT-23


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    pm744c62702-c2487ot-23transistor marking 789 code PDF

    XS marking code

    Contextual Info: SIEMENS BCR 569 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kQ JL TT BCR 569 XLs Pin Configuration UPON INQUIRY 1=B Package 2= E o Marking Ordering Code II co Type IT


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    ot-23xs marking code PDF

    702 Z TRANSISTOR

    Abstract: BF 981 transistor Bf 981 Q62702-F1250 BF 145 transistor marking LG transistor Bf 979
    Contextual Info: SIEMENS BF 775A NPN Silicon R F Transistor • E sp ecially suitable for amplifiers and T V-sat tuners E S P : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration B F 775A LG s Q62.702-F1250 1 =B


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    702-f1250is21e1s21/s702 z transistor+6bf 981transistor bf 981q62702-f1250bf 145 transistormarking lgtransistor bf 979 PDF

    ON Semiconductor marking 821

    Contextual Info: SIEMENS BCR 583 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10ki2,R2=10kS2 Type Marking Ordering Code Pin Configuration BCR 583 XMs 1=B Q62702-C2385 Package 2=E 3=C SOT-23 Maximum Ratings


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    10ki210ks2q62702-c2385ot-23+2iii11on semiconductor marking 821 PDF

    519 MARKING CODE

    Abstract: 519 SOT23
    Contextual Info: SIEMENS BCR 519 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7k£2 FI nr let Ordering Code Pin Configuration XKs UPON INQUIRY 1=B Package m Marking BCR 519 fO II Type 3=C


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    ot-23519 marking code519 sot23 PDF

    c2371

    Abstract: Q62702-C2371
    Contextual Info: BCR 553 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=2.2kΩ, R2=2.2kΩ Type Marking Ordering Code Pin Configuration BCR 553 XBs 1=B Q62702-C2371 Package 2=E 3=C SOT-23 Maximum Ratings


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    q62702-c2371ot-23nov-27-1996c2371 PDF

    Nov-27-1996

    Contextual Info: BCR 571 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=1kΩ, R2=1kΩ Type Marking Ordering Code Pin Configuration BCR 571 XXs 1=B UPON INQUIRY Package 2=E 3=C SOT-23 Maximum Ratings


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    ot-23nov-27-1996 PDF

    PBSS5620PA

    Contextual Info: PBSS5620PA 20 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 13 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


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    pbss5620paot1061pbss4620pa PDF

    NSVMUN5333

    Abstract: SMUN5311DW1T1G NSVMUN5333DW1T1G Transistor BFR 93
    Contextual Info: MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Dual Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with


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    mun5311dw1t1gsmun5311dw1t1gnsvmun5311dw1t1gseriesot-363+4mun5311dw1t1/dnsvmun5333nsvmun5333dw1t1gtransistor bfr 93 PDF

    MUN5311DW1T1

    Abstract: MUN5311DW1T1G MUN5312DW1T1 MUN5312DW1T1G MUN5313DW1T1 MUN5313DW1T1G MUN5314DW1T1 MUN5314DW1T1G
    Contextual Info: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


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    mun5311dw1t1ot-363mun5311dw1t1/dmun5311dw1t1g+6mun5312dw1t1mun5312dw1t1gmun5313dw1t1mun5313dw1t1gmun5314dw1t1mun5314dw1t1g PDF

    PMBT2222

    Abstract: PMBT2222A PMBT2907 PMBT2907A
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBT2222; PMBT2222A NPN switching transistors Product specification Supersedes data of 1999 Apr 27 2004 Jan 22 Philips Semiconductors Product specification NPN switching transistors PMBT2222; PMBT2222A FEATURES PINNING • High current max. 600 mA


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    pmbt2222pmbt2222apmbt2907pmbt2907a+2mam255sca76 PDF

    transistor B1010

    Abstract: transistor code p34 HF RFID loop antenna design nom 8370 b amplitude modulation block diagram Bulletin 451 h825 T matching RFID loop antenna 13.56 CRC-16 MCRF452
    Contextual Info: MCRF450/451/452/455 13.56 MHz Read/Write Passive RFID Device FEATURES • • • • • • • • • • • • • • • • • • • PACKAGE TYPES Contactless read and write 1024 bits 32 blocks of total memory 864 bits of user programmable memory


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    mcrf450/451/452/4551-of-16mcrf450mcrf452+12mcrf45132-bitds40232b-pagetransistor b1010transistor code p34hf rfid loop antenna designnom 8370 bamplitude modulation block diagrambulletin 451h825t matching rfid loop antenna 13.56crc-16 PDF

    Contextual Info: PD-91816 International IÖR Rectifier sMPs MosFET IRFIB5N65A HEXFET Power MOSFET A pplications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed pow er switching • High V oltage Isolation = 2.5K V R M S V dss 650V


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    pd-91816irfib5n65a PDF

    NSV40201LT1G

    Abstract: NSV40201 NSS40201LT1G
    Contextual Info: NSS40201LT1G, NSV40201LT1G 40 V, 4.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


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    nss40201lt1gnsv40201lt1gnss40201l/dnsv40201 PDF

    506AP

    Abstract: NSS40200UW6T1G
    Contextual Info: NSS40200UW6T1G 40 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


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    nss40200uw6t1gnss40200uw6/d506ap PDF

    NSS20300MR6T1G

    Contextual Info: NSS20300MR6T1G 20 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


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    nss20300mr6t1gnss20300mr6/d PDF

    419B-02

    Abstract: SMD310
    Contextual Info: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A


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    200x400sc-88419b-02smd310 PDF

    6144ST

    Abstract: 14L-PDIP MCP6141 MCP6142 MCP6143 MCP6144 MCP614X 6144EST marking G3 xxx sot-23
    Contextual Info: MCP6141/2/3/4 600 nA, Non-Unity Gain Rail-to-Rail Input/Output Op Amps Features: Description: • • • • • • • • • The MCP6141/2/3/4 family of non-unity gain stable operational amplifiers op amps from Microchip Technology Inc. operate with a single supply voltage as low


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    mcp6141/2/3/4ds21668b-page6144st14l-pdip+7mcp6141mcp6142mcp6143mcp6144mcp614x6144estmarking g3 xxx sot-23 PDF

    k2466

    Abstract: field effect transistor transistor k2466
    Contextual Info: 2SK2466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS 2SK2466 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 34 mΩ (typ.) z High forward transfer admittance


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    2sk2466k2466field effect transistortransistor k2466 PDF

    XPOSYS

    Abstract: gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb
    Contextual Info: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.


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    bfp640esdot343ot343-poot343-fp+14ot323-tp726-bfp640esde6327640esde6327xposysgummel poon model parameter hbtx-goldcolossusdiodes transistor marking k2 dualtrimblegermanium transistoragilent adssensonor2.4ghz lnb PDF

    Contextual Info: LFS0101, LFS0102 www.ti.com SDLS966 – DECEMBER 2013 Single/Dual Bidirectional Multi-Voltage Level Translator for Open-Drain & Push-Pull Application Check for Samples: LFS0101, LFS0102 FEATURES DESCRIPTION • The LSF0101 and LSF0102 are bidirectional voltage


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    lfs0101lfs0102sdls966lsf0101+1lsf0102 PDF

    523AN

    Abstract: PCA9306 PCA9306DTR2G UDFN-8 PCA9306USG
    Contextual Info: PCA9306 Dual Bidirectional I2C-bus and SMBus Voltage-Level Translator The PCA9306 is a dual bidirectional I2C−bus and SMBus voltage−level translator with an enable EN input. http://onsemi.com Features MARKING DIAGRAMS • 2−bit Bidirectional Translator for SDA and SCL Lines in


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    pca9306948al523anpca9306/d+3pca9306dtr2gudfn-8pca9306usg PDF

    SN0617

    Abstract: mcp65421 MCP6541 MCP6542 MCP6543 MCP6544
    Contextual Info: MCP6541/2/3/4 Push-Pull Output Sub-Microamp Comparators Features Description • • • • • • • The Microchip Technology Inc. MCP6541/2/3/4 family of comparators is offered in single MCP6541 , single with Chip Select (CS) (MCP6543), dual (MCP6542)


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    mcp6541/2/3/4mcp6541mcp6543mcp6542+7mcp6544ot-23-5sc-70-5mcp65xds21696d-pagesn0617mcp65421 PDF