TRANSISTOR MARKING 9D Search Results

2SC5317F

Contextual Info: 2SC5317F TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317F Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.3dB (f=2GHz) High Gain : |S2l e|2= 9dB (f=2GHz) 1.6 ± 0.1 0.85 ±0.1

VHF-UHF Band Low Noise Amplifier

Abstract: 2SC5317 2Ghz amplifier
Contextual Info: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r0.8 ±, 0 .1i, Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)

Contextual Info: 2SC5316 TOSHIBA 2SC5316 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz) N i I o +1 Ò+m 1 <N p

Contextual Info: TO SHIBA 2SC5317FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure :NF = i.3dB (f=2GHz) High Gain :|S21el2=9dB (f=2GHz) 1.2 ± 0.05

Contextual Info: 2SC5315 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5315 Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 2 .5 - 0 . 3 • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)

marking MS

Abstract: rt 0608 2SA1963 TA-0541 5GHz PNP transistor
Contextual Info: Ordering n u m b e r:E N 5230 No.5230 2SA1963 PNP Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amp, Ultrahigh-Speed Switching Applications Features • Low noise : NF = 1.5dBtyp f=lGHz . • High gain : I S21e I z= 9dB typ (f= 1GHz). • High cutoff frequency : fr = 5GHz typ.

SMD TRANSISTOR MARKING 9D

Abstract: NXP SMD TRANSISTOR MARKING CODE PMD9003D SMD TRANSISTOR MARKING 904
Contextual Info: PMD9003D MOSFET driver Rev. 01 — 24 November 2006 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET , NPN general-purpose transistor and high-speed switching diode connected in totem pole configuration in a small

MT4S03

Contextual Info: MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: MT4S03BU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03BU Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.6dB typ. (@f = 2GHz) • High Gain: |S21e| = 9dB (typ.) (@f = 2 GHz) 2 Absolute Maximum Ratings (Ta = 25°C)

6R190C6

Abstract: 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 6r190c6 infineon 6R19
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AF AMPLIFIER APPLICATIONS • SUITABLE FOR AUTOMATIC INSERTION IN THICK AND THIN-FILM CIRCUITS • LOW NOISE: BC859, BC860 _ • Complement to BC846 . BC8S0 SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C

transistor B A O 33st

Abstract: marking CER 5-pin
Contextual Info:   0LFURSRZHU P$ /RZ 'URSRXW &026 5HJXODWRU 0,9:708 Product Description ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ The CM3014 is a very low dropout, low noise regulator that delivers up to 150mA of load current at a fixed output voltage. 9DULRXV UHJXODWHG RXWSXW YROWDJHV

490-48

Abstract: 126-58-9 2SC5415A DSA0026081 I-T133
Contextual Info: 2SC5415A Ordering number : ENA1080 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5415A High-Frequency Low-Noise Amplifier Applications Features • • High gain : ⏐S21e⏐2=9dB typ f=1GHz . High cut-off frequency : fT=6.7GHz typ.

transistor marking 9D

Abstract: marking 9D transistor STA9015SF STC9014SF STA9015
Contextual Info: STA9015SF Semiconductor PNP Silicon Transistor Description • General purpose application. • Switching application. Features • Excellent hFE linearity : hFE IC=0.1mA / hFE(IC=2mA) = 0.95(Typ.) • Complementary pair with STC9014SF Ordering Information

2SC5315

Contextual Info: 2SC5315 TO SHIBA TENTATIVE 2SC5315 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 2.5-0.3 + 0.25 • • , 1-5-°-15.| Low Noise Figure : NF = 1.3dB (f=2GHz)

MARKING toshiba

Abstract: 2SC531 toshiba marking 2SC5316
Contextual Info: 2SC5316 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C5 3 1 6 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series U nit in mm 2.1 ± 0 .1 ,1.25 ± 0.1, • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain

Contextual Info: TO SHIBA TENTATIVE 2SC5316 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C5 3 1 6 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm CHIP : fT = 16GHz series 2.1 ±0.1 + 0.1 0.3-0 1.3 ±0.1 „ Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain

Contextual Info: TOSHIBA TENTATIVE 2SC5316 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5316 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm CHIP : fT = 16GHz series 2.1 ±0.1 ,1.25 ± 0.1, • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain :

thermistor ttc 103

Abstract: XTR101 XTR101AG XTR101AP XTR101AU XTR101BG
Contextual Info: XTR101 SBOS146A − OCTOBER 1986 − REVISED AUGUST 2004 Precision, Low Drift 4-20mA TWO-WIRE TRANSMITTER FEATURES D INSTRUMENTATION AMPLIFIER INPUT: − Low Offset Voltage, 30µV max − Low Voltage Drift, 0.75µV/°C max − Low Nonlinearity, 0.01% max D TRUE TWO-WIRE OPERATION:

handsfree chip

Abstract: AS2522 AS2522A AUSTRIA MIKRO SYSTEME INTERNATIONAL datas for speech AN522 BC327 FT1 V1_0 ST 9034
Contextual Info: Austria Mikro Systeme Int. AG Preliminary Data Sheet AS2522A Telephone Line Interface and Speakerphone Circuit controlled via Serial Interface Austria Mikro Systeme International AG Key Features General Description ! AS2522A is a CMOS integrated circuit that

B 856B

Abstract: BC846 BC850 BC856 BC859 BC860
Contextual Info: BC856/857/858/859/860 BC856/857/858/859/860 Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 . BC850 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector

transistor SMD P1f

Abstract: R04003 A114 A115 FPD1000AS JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F
Contextual Info: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available

PT100 137

Abstract: PT100 bridge example receiver RTDS PT100 connected diagram RTD PT100 3wire pt100/RTD PT100 XTR105UA XTR105P XTR105PA XTR105U
Contextual Info: XTR105 XTR 105 XTR 105 SBOS061B – FEBRUARY 1997 – REVISED AUGUST 2004 4-20mA CURRENT TRANSMITTER with Sensor Excitation and Linearization FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● ● ● ● ● DESCRIPTION The XTR105 is a monolithic 4-20mA, 2-wire current transmitter with two precision current sources. It provides complete

schematic diagram tv sony 21 trinitron

Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
Contextual Info: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV