TRANSISTOR MARKING 9D Search Results

marking 9D transistor

Abstract: transistor transistor marking 9D KIA79L09F
Contextual Info: SEMICONDUCTOR KIA79L09F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 9D KIA79L09F * Grade - - Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only

K 4005 transistor

Abstract: ic MARKING FZ 2SC4505 T100 T200 2SC4505CE
Contextual Info: 2SC4505 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT3, SOT-89, SC-62) package • package marking: 2SC4505; CE-*, where ★ is hFE code • high voltage BVCEO = 400 V • low collector saturation voltage, typically VCE(sat) = 0.05 V for

2SC5317F

Contextual Info: 2SC5317F TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317F Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.3dB (f=2GHz) High Gain : |S2l e|2= 9dB (f=2GHz) 1.6 ± 0.1 0.85 ±0.1

VHF-UHF Band Low Noise Amplifier

Abstract: 2SC5317 2Ghz amplifier
Contextual Info: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r0.8 ±, 0 .1i, Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)

Contextual Info: 2SC5316 TOSHIBA 2SC5316 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz) N i I o +1 Ò+m 1 <N p

Contextual Info: TO SHIBA 2SC5317FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure :NF = i.3dB (f=2GHz) High Gain :|S21el2=9dB (f=2GHz) 1.2 ± 0.05

Contextual Info: 2SC5315 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5315 Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 2 .5 - 0 . 3 • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)

marking MS

Abstract: rt 0608 2SA1963 TA-0541 5GHz PNP transistor
Contextual Info: Ordering n u m b e r:E N 5230 No.5230 2SA1963 PNP Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amp, Ultrahigh-Speed Switching Applications Features • Low noise : NF = 1.5dBtyp f=lGHz . • High gain : I S21e I z= 9dB typ (f= 1GHz). • High cutoff frequency : fr = 5GHz typ.

SMD TRANSISTOR MARKING 9D

Abstract: NXP SMD TRANSISTOR MARKING CODE PMD9003D SMD TRANSISTOR MARKING 904
Contextual Info: PMD9003D MOSFET driver Rev. 01 — 24 November 2006 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET , NPN general-purpose transistor and high-speed switching diode connected in totem pole configuration in a small

MT4S03

Contextual Info: MT4S03A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: MT4S03AU Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: gain = 9dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: MT4S03BU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S03BU Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.6dB typ. (@f = 2GHz) • High Gain: |S21e| = 9dB (typ.) (@f = 2 GHz) 2 Absolute Maximum Ratings (Ta = 25°C)

6R190C6

Abstract: 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 6r190c6 infineon 6R19
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6

BC857CMTF

Abstract: PNP Epitaxial Silicon Transistor sot-23 BC857BMTF BC857AMTF BC859BMTF marking 25 SOT-23 ref IC BC860 bc856bmtf BC846 BC850
Contextual Info: BC856- BC860 tm PNP Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits 3 • Low Noise: BC859, BC860 • Complement to BC846 . BC850 2 1 SOT-23 1. Base 2. Emitter 3. Collector

2SA1645

Abstract: 2SA1645-Z
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1645, 2SA1645-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for high- PACKAGE DRAWING UNIT: mm speed switching and features a very low collector-to-emitter

transistor B A O 33st

Abstract: marking CER 5-pin
Contextual Info:   0LFURSRZHU P$ /RZ 'URSRXW &026 5HJXODWRU 0,9:708 Product Description ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ The CM3014 is a very low dropout, low noise regulator that delivers up to 150mA of load current at a fixed output voltage. 9DULRXV UHJXODWHG RXWSXW YROWDJHV

490-48

Abstract: 126-58-9 2SC5415A DSA0026081 I-T133
Contextual Info: 2SC5415A Ordering number : ENA1080 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5415A High-Frequency Low-Noise Amplifier Applications Features • • High gain : ⏐S21e⏐2=9dB typ f=1GHz . High cut-off frequency : fT=6.7GHz typ.

Contextual Info: 2SC5415A Ordering number : ENA1080 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5415A High-Frequency Low-Noise Amplifier Applications Features • • High gain : ⏐S21e⏐2=9dB typ f=1GHz . High cut-off frequency : fT=6.7GHz typ.

transistor A1080

Abstract: ENA1080A 459 MARKING sot89
Contextual Info: 2SC5415A Ordering number : ENA1080A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5415A High-Frequency Low-Noise Amplifier Applications Features High gain : ⏐S21e⏐2=9dB typ f=1GHz High cut-off frequency : fT=6.7GHz typ •

transistor marking 9D

Abstract: marking 9D transistor STA9015SF STC9014SF STA9015
Contextual Info: STA9015SF Semiconductor PNP Silicon Transistor Description • General purpose application. • Switching application. Features • Excellent hFE linearity : hFE IC=0.1mA / hFE(IC=2mA) = 0.95(Typ.) • Complementary pair with STC9014SF Ordering Information

fe marking code

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC856/857/858/859/860 SWITCHING AND AMPLIFIER APPLICATIONS S O T-23 • S uitable fo r auto m atic insertion in th ick and thin-film circuits • LOW NOISE: BC859, BC860 • C om plem ent to BC846 . BC850 ABSOLUTE MAXIMUM RATINGS TA=25°C

2SC5315

Contextual Info: 2SC5315 TO SHIBA TENTATIVE 2SC5315 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 2.5-0.3 + 0.25 • • , 1-5-°-15.| Low Noise Figure : NF = 1.3dB (f=2GHz)

2SA1645

Abstract: 2SA1645-Z D1558
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

MARKING toshiba

Abstract: 2SC531 toshiba marking 2SC5316
Contextual Info: 2SC5316 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C5 3 1 6 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series U nit in mm 2.1 ± 0 .1 ,1.25 ± 0.1, • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain