TRANSISTOR MARKING 1DT Search Results

TL1451 Application note

Abstract: T1451A TL1451ACN TL1451 equivalent
Contextual Info: ąą TL1451A DUAL PULSEĆWIDTHĆMODULATION CONTROL CIRCUITS ą SLVS024E – FEBRUARY 1983 – REVISED NOVEMBER 1999 CT RT ERROR 1IN+ AMPLIFIER 1 1IN– 1FEEDBACK 1DTC 1OUT GND 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 REF SCP 2IN+ ERROR 2IN– AMPLIFIER 2 2FEEDBACK

marking code 1gt

Abstract: transistor marking 1Dt transistor 1kt 1Ft SOT323 1Gt transistor BC847CW pin 1Ft TRANSISTOR 1GT MARKING 1Gt 27 marking code
Contextual Info: Philips Semiconductors Product specification NPN general purpose transistors FEATURES BC846W; BC847W; BC848W PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • General purpose switching and amplification.

transistor 1BT

Abstract: 1Ft SOT323 1Ft TRANSISTOR transistor 1Ht BC847CW1GT transistor 1kt BC846W 1Bt 65 1kt marking code npn 1bt
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC846W; BC847W; BC848W NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 Philips Semiconductors Product specification

2SD1328

Abstract: transistor marking 1Dt
Contextual Info: Transistor 2SD1328 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 +0.2 1.45 0.95 0.4 –0.05 2.9 –0.05 3 2 Symbol Ratings Unit VCBO

T1451A

Abstract: t1451
Contextual Info: ąą TL1451A DUAL PULSEĆWIDTHĆMODULATION CONTROL CIRCUITS ą SLVS024E – FEBRUARY 1983 – REVISED NOVEMBER 1999 CT RT ERROR 1IN+ AMPLIFIER 1 1IN– 1FEEDBACK 1DTC 1OUT GND 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 REF SCP 2IN+ ERROR 2IN– AMPLIFIER 2 2FEEDBACK

KSA812

Abstract: KSC1623
Contextual Info: SAMSUNG S E M I C O N D U C T O R . INC KSC1623 14E D | ?TbMma □OQt.fl'm 1 | NPN EPITAXIAL SILICO N TRANSISTOR LOW FREQUENCY AMPLIFIER HIGH FREQUENCY O SC SO T -2 3 • Complement to KSA812 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage

military part marking symbols triangle

Abstract: am/Uf 89
Contextual Info: ąą TL1451A DUAL PULSEĆWIDTHĆMODULATION CONTROL CIRCUITS ą SLVS024E – FEBRUARY 1983 – REVISED NOVEMBER 1999 CT RT ERROR 1IN+ AMPLIFIER 1 1IN– 1FEEDBACK 1DTC 1OUT GND 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 REF SCP 2IN+ ERROR 2IN– AMPLIFIER 2 2FEEDBACK

transistor 1BT

Abstract: transistor 1Ht 1Ft SOT323 1kt marking code BC846BW transistor 1BT 88 marking code 1gt TRANSISTOR 1gt BC846W BC847W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC846W; BC847W; BC848W NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 27 Philips Semiconductors Product specification

TL1451ACN equivalent

Abstract: TL1451ACN TL1451ACD
Contextual Info: ąą TL1451A DUAL PULSEĆWIDTHĆMODULATION CONTROL CIRCUITS ą SLVS024E – FEBRUARY 1983 – REVISED NOVEMBER 1999 CT RT ERROR 1IN+ AMPLIFIER 1 1IN– 1FEEDBACK 1DTC 1OUT GND 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 REF SCP 2IN+ ERROR 2IN– AMPLIFIER 2 2FEEDBACK

2SD1328

Contextual Info: Transistor 2SD1328 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm 0.40+0.10 ñ0.05 0.16+0.10 -0.06 • Absolute Maximum Ratings 0.4±0.2 5° 0.65 1.9±0.1 2.90+0.20 -0.05 (Ta=25˚C) 10° Parameter

2SD1328

Contextual Info: Transistor 2SD1328 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 +0.2 1.45 0.95 0.4 –0.05 2.9 –0.05 3 2 Symbol Ratings Unit VCBO

Contextual Info: TOSHIBA 2SK2782 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE L^ tt-M O S V 2SK2782 HIGH SPEED. HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : RdS ( O N ) -Û039O (Typ.)

Contextual Info: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

Contextual Info: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support

Contextual Info: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support

TL1451A

Abstract: TL1451A-EP TL1451AMDREP
Contextual Info: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support

TL1451

Contextual Info: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support

Contextual Info: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support

Contextual Info: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support

Contextual Info: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support

Q100

Abstract: TL1451A TL1451A-EP TL1451AMDREP TL1451A-Q1 TL1451A equivalent
Contextual Info: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support

Contextual Info: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support

scp soic

Abstract: TL1451A Q100 TL1451A-EP TL1451AMDREP TL1451A-Q1
Contextual Info: TL1451A-EP DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS www.ti.com SLVS614 – DECEMBER 2005 FEATURES • • • • • • • • • • 1 Controlled Baseline – One Assembly/Test Site, One Fabrication Site Enhanced Diminishing Manufacturing Sources (DMS) Support