TRANSISTOR MANUAL Search Results

IC-3479

Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1428A is NPN silicon epitaxial Darlington Power (in millimeters) Transistor Array that built in Surge Absorber 4 circuits

PA1476

Abstract: transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1476 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1476 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed

ic 8705

Abstract: IC-8705 nec 8705 IC-3482 PA1436AH IEI-1209 UPA1436AH pa1436 transistor array high speed IEI-1213
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1436A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436A is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed

IC-3523

Abstract: IC-6342 MEI-1202 MF-1134 IEI-1213 power transistor array
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1458 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1458 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and

uPA1456H

Abstract: IC-3521 PA1456 IC-6340 IEI-1213 MEI-1202 MF-1134 DARLINGTON TRANSISTOR ARRAY
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1456 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1456 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed

88 diode

Abstract: NUS2501W6T1 sot-363 Marking LG
Contextual Info: NUS2501W6 Integrated NPN Digital Transistor with Switching Diode Array This new option of integrated devices is designed to replace a discrete solution of a single transistor with three switching diodes. BRT Bias Resistor Transistor contains a single transistor with a

pa1437

Abstract: IC-3516 pnp DARLINGTON TRANSISTOR ARRAY IEI-1209 pnp darlington array IEI-1213 MEI-1202 MF-1134 PA1437H power transistor array
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1437 PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µ PA1437 is PNP silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed

IC-6634

Abstract: PA1478 MEI-1202 MF-1134 IEI-1213 2di50 DARLINGTON TRANSISTOR ARRAY
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1478 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1478 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and

AN3025

Abstract: transistor working principle tinning METCAL MX-500 circuit free transistor SN62 SN63 GC Electronics 108109 metcal transistor free
Contextual Info: Application Note AN3025 Transistor Mounting and Soldering Rev. 3 Introduction There are three basic steps recommended to mount and solder RF power transistors into a circuit. Solder pre-tin the transistor leads Mount the transistor Solder the transistor leads to the circuit trace

Contextual Info: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to

Contextual Info: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to

N5 npn transistor

Abstract: N5 transistor SC-88 419B-02 NSM46211DW6T1G NSM46211DW6
Contextual Info: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to

419B-02

Abstract: NSM21356DW6T1G SC marking code NPN transistor
Contextual Info: NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21356DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series

419B-02

Abstract: NSM21156DW6T1G marking .544 sot363 NSM21
Contextual Info: NSM21156DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21156DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series

Contextual Info: NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network http://onsemi.com NSM21356DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series

4 npn transistor ic 14pin

Abstract: lowest noise audio NPN transistor C10535E PA104 MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • 9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA104B: Studded ceramic package provides superior thermal dissipation

369D

Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic

369D

Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105 l4 marking code diode D42DG
Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic

Contextual Info: NSB1706DMW5T1G, NSVB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base

NSB1706DMW5T1

Abstract: transistor marking code 325
Contextual Info: NSB1706DMW5T1 Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

D42DG

Abstract: BUD43D transistor 369D BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic

IC-6339

Abstract: PA1453 IEI-1213 MEI-1202 MF-1134 ic 926
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1453 PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µ PA1453 is PNP silicon epitaxial Power Transistor in millimeters Array that built in 4 circuits designed for driving solenoid,

IC-3520

Abstract: uPA1454H PA1454 IEI-1213 MEI-1202 MF-1134 iei-1209
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1454 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1454 is NPN silicon epitaxial Power Transistor in millimeters Array that built in 4 circuits designed for driving solenoid,

Contextual Info: XC9211/ 9212 Series Preliminary Driver Transistor Built-In Step-Down DC/DC Converters Synchronous PWM, Non Synchronous PWM/PFM Switchable November 18, 2002 Ver. 2 ‹ P channel Driver Transistor Built-In ‹ Synchronous N channel Switching Transistor Built-in