TRANSISTOR MAKING LIST Search Results

DIP18

Abstract: LB1741 mm 105k BUT 11 Transistor
Contextual Info: Ordering number:ENN4094 Monolithic Digital IC LB1741 Octal NPN Darlington-pair Transistor Array Overview Package Dimensions The LB1741 is a high-current Darlington-pair transistor array that incorporates output clamp diodes, making it ideal for driving inductive loads.

TS16949

Abstract: ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC
Contextual Info: ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTN2040F Description This transistor combines high gain, high current operation and low saturation voltage making it

transistor TT 2146

Abstract: 3335 2.2 k resistor AJW 623 AT-32032 AT-32032-BLK C2L4 transistors malaysia 9409 marking R5* sc-70
Contextual Info: Agilent AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Features Description Agilent’s AT-32032 is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use

transistor A 564

Abstract: S-AV8 2-13B1A 564 transistor S-AU4
Contextual Info: 7.1. Precautions for handling RF Pow er Transistor 1 Mounting ceramic seal type transistor For mounting such a transistor as shown in the figure, on a printed circuit board or heat sink, it is ncessary to adopt either the method of making the lead level (Fig. 2, (a) or the

transistor TT 2146

Abstract: AT-32032 AT-32032-BLK 32032
Contextual Info: AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32032 is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery

TS16949

Abstract: ZX5T955Z
Contextual Info: ZX5T955Z. 140V PNP Low saturation medium power transistor in SOT89 Summary BVCEO = -140V : RSAT = 85m⍀; IC = -3A Description Packaged in the SOT89 outline this new 5th generation low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC

4018 datasheet

Abstract: ic 4018 4891 TRANSISTOR TS16949 ZXTN2040F ZXTP2041F ZXTP2041FTA ZXTP2041FTC marking 312 SOT23 zetex
Contextual Info: A Product Line of Diodes Incorporated ZXTP2041F SOT23 40 volt PNP silicon planar medium power transistor Summary V BR CEO > -40V Ic(cont) = -1A Vce(sat) < -500mV @ -1A Complementary type ZXTN2040F Description This transistor combines high gain, high current operation and low saturation voltage making it

"PNP Transistor"

Abstract: design ideas TS16949 ZX5T951Z ZX5T951ZTA
Contextual Info: ZX5T951Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line

2SC4272

Abstract: ITR06606 ITR06607 ITR06608 ITR06611
Contextual Info: 2SC4272 Ordering number : EN2970A SANYO Semiconductors DATA SHEET 2SC4272 NPN Epitaxial Planar Silicon Transistor 27MHz CB Transceiver Driver Applications Features • Small size making it easy to provide high-density, small-sized hybrid ICs. Specifications

Contextual Info: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it

TS16949

Abstract: ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813
Contextual Info: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it

Contextual Info: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it

2SC4272

Abstract: EN2970
Contextual Info: Ordering number:EN2970 NPN Epitaxial Planar Silicon Transistor 2SC4272 27MHz CB Transceiver Driver Applications Features Package Dimensions • Small size making it easy to provide high-density, small-sized hybrid ICs. unit:mm 2038A [2SC4272] 4.5 1.6 2.5 1.0

2SA1864

Abstract: 47192
Contextual Info: Ordering number:EN4719 PNP Epitaxial Planar Silicon Transistor 2SA1864 Muting Circuits, Driver Applications Features Package Dimensions • On-chip bias resistors R1=4.7kΩ, R2=4.7kΩ . · Very small-sized package making 2SA1864-applied sets small and slim.

ZXTN25060BZTA

Abstract: TS16949 ZXTN25060BZ SOT89 transistor marking 5A marking 1c7
Contextual Info: ZXTN25060BZ 60V, SOT89, NPN medium power transistor Summary BVCEX > 150V BVCEO > 60V BVECO > 6V IC cont = 5A VCE(sat) < 70mV @ 1A RCE(sat) = 48m⍀ PD = 2.4W Description C Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in

"marking ca"

Contextual Info: Ordering number:4721 PNP Epitaxial Planar Silicon Transistor 2SA1866 Muting Circuits, Driver Applications Features Package Dimensions • On-chip bias resistors R1=47kΩ, R2=47kΩ . · Very small-sized package making 2SA1866-applied sets small and slim.

2SA1865

Contextual Info: Ordering number:EN4720 PNP Epitaxial Planar Silicon Transistor 2SA1865 Muting Circuits, Driver Applications Features Package Dimensions • On-chip bias resistors R1=10kΩ, R2=10kΩ . · Very small-sized package making 2SA1865-applied sets to small and slim.

2SD1618

Contextual Info: Ordering number : EN1784C 2SD1618 Bipolar Transistor 15V, 0.7A, Low VCE sat , NPN Single PCP http://onsemi.com Features • • Low collector-to-emitter saturation voltage Very small size making it easy to provide highdensity, small-sized hybrid IC’s Specifications

Contextual Info: IRVINE SENSORS CORPORATION SILICON BRAIN ARCHITECTURE Special Technical Summary: 3D Field-Effect Transistor 3DFET An electronic assembly that emulates the human functionality of recognition and simple decision making is needed almost in all future applications. Researchers and developers around the world

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1804 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804

AT-32011

Abstract: AT-31011 AT32011 AT-32033 AT-32033-TR1G sot-23 marking code 352
Contextual Info: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal

AT-32011

Abstract: AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK
Contextual Info: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them

ITR07247

Abstract: ITR07248 ITR07249 ITR07250 2SC4597 2SC459
Contextual Info: 2SC4597 Ordering number : EN3143A SANYO Semiconductors DATA SHEET 2SC4597 NPN Triple Diffused Silicon Transistor Switching Regulator Applications Features • • • • • Surface mount type device making the following possible -Reduction in the number of manufacturing processes for 2SC4597-applied equipment

AT-31011

Abstract: AT-310 AT-31011-BLK AT-31011-TR1 AT-31033
Contextual Info: AT-31011, AT-31033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in