TRANSISTOR M6 Search Results

M63828DP

Abstract: 16PIN M63828WP 16P4X-A IL500
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made

IL500

Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made

M63827DP

Abstract: M63827WP 16PIN 16P4X-A IL500
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made

Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made

18P4G

Abstract: 20P2N-A M63805FP M63805KP M63805P
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63805P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63805P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with

DARLINGTON TRANSISTOR ARRAY

Contextual Info: <TRANSISTOR ARRAY> M63840FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840FP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform

M63806KP

Abstract: 18P4G 20P2N-A M63806FP M63806P
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63806P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63806P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with

Contextual Info: <TRANSISTOR ARRAY> M63840KP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840KP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform

18P4G

Abstract: 20P2N-A M63807FP M63807KP M63807P
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63807P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63807P/FP/KP are eight-circuit Single transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with

M63826GP

Abstract: gP DIODE m63826p M54526FP M54526P M63826FP M63826
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63826P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M63826P, M63826FP and M63826GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor

M54523FP

Abstract: M63823GP M54523P M63823FP M63823P
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63823P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M63823P, M63823FP and M63823GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor

M63826GP

Abstract: M54526FP M54526P M63826FP M63826P
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63826P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M63826P, M63826FP and M63826GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor

Contextual Info: <TRANSISTOR ARRAY> M63840FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840FP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN NC transistors. Both the semiconductor integrated circuits perform

18P4G

Abstract: 20P2N-A M63815FP M63815KP M63815P 20P2N
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform

M54523FP

Abstract: M54523P M63823FP M63823P m54523 M63823GP
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63823P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M63823P, M63823FP and M63823GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor

M63816FP

Abstract: M63816KP M63816P 18P4G 20P2N-A
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform

18P4G

Abstract: 20P2N-A M63817FP M63817KP M63817P
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform

M63804FP

Abstract: M63804GP M63804KP M63804P 4 digit 40 pin IC configuration
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63804P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63804P, M63804FP, M63804GP and M64804KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

transistor kp

Abstract: M63802FP M63802GP M63802KP M63802P
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

M63803FP

Abstract: M63803GP M63803KP M63803P
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63803P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63803P, M63803FP, M63803GP and M63803KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

M63803GP equivalent

Abstract: M63803FP M63803GP M63803KP M63803P KP400
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63803P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63803P, M63803FP, M63803GP and M63803KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

M63802FP

Abstract: M63802GP M63802KP M63802P
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

M63804FP

Abstract: M63804GP M63804KP M63804P
Contextual Info: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63804P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63804P, M63804FP, M63804GP and M64804KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.