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    TRANSISTOR M6 Search Results

    TRANSISTOR M6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    		Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    		Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    93425ADM/B
    		Rochester Electronics LLC 93425 - 1K X 1 TTL SRAM PDF Buy
    27S185DM/B
    		Rochester Electronics LLC 27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18 PDF Buy

    TRANSISTOR M6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    M63828DP

    Abstract: 16PIN M63828WP 16P4X-A IL500
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made


    Original     		M63828WP/DP 500mA M63828WP M63828DP 500mA) 16P2X-B 16P2X-B 16PIN 16P4X-A IL500 PDF

    M63826GP

    Abstract: gP DIODE m63826p M54526FP M54526P M63826FP M63826
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63826P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M63826P, M63826FP and M63826GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor


    Original     		M63826P/FP/GP 500mA M63826P, M63826FP M63826GP 225mil M63826P M54526P M54526FP. gP DIODE M54526FP M63826 PDF

    M54523FP

    Abstract: M63823GP M54523P M63823FP M63823P
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63823P/FP/GP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M63823P, M63823FP and M63823GP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor


    Original     		M63823P/FP/GP 500mA M63823P, M63823FP M63823GP 225mil M63823P M54523P M54523FP. M54523FP PDF

    M63804FP

    Abstract: M63804GP M63804KP M63804P 4 digit 40 pin IC configuration
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63804P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63804P, M63804FP, M63804GP and M64804KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		M63804P/FP/GP/KP 300mA M63804P, M63804FP, M63804GP M64804KP 300mA) M63804FP M63804KP M63804P 4 digit 40 pin IC configuration PDF

    transistor kp

    Abstract: M63802FP M63802GP M63802KP M63802P
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63802P/FP/GP/KP 7-UNIT 300mA TRANSISTOR ARRAY DESCRIPTION M63802P, M63802FP, M63802GP and M63802KP are seven-circuit Singe transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


    Original     		M63802P/FP/GP/KP 300mA M63802P, M63802FP, M63802GP M63802KP 300mA) transistor kp M63802FP M63802P PDF

    QCA300BA60

    Abstract: 675g M6 transistor
    Contextual Info: TRANSISTOR MODULE（Hi-β） QCA300BA60 UL;E76102 （M） QCA300BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistor. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is


    Original     		QCA300BA60 E76102 QCA300BA60 trr200ns) 113max IC300A, VCEX600V hFE750 Ic300A 675g M6 transistor PDF

    QCA30B60

    Abstract: QCA30A60 qca30a QCA30B40 QCB30A40 QCB30A60 c2e1
    Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max


    Original     		QCA30B/QCB30A40/60 E76102 QCA30B QCB30A 94max 110TAB 32max 31max 35max QCA30B60 QCA30A60 qca30a QCA30B40 QCB30A40 QCB30A60 c2e1 PDF

    C2E1

    Abstract: QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab
    Contextual Info: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 （M） QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max


    Original     		QCA75A/QCB75A40/60 E76102 QCA75A QCB75A 94max VCEX400/600V 32max 31max 110TAB Ic75A C2E1 QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab PDF

    GP 015 DIODE

    Abstract: GP 005 DIODE GP 250 DIODE M63813FP M63813GP M63813KP M63813P
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN


    Original     		M63813P/FP/GP/KP 300mA M63813P/FP/GP/KP GP 015 DIODE GP 005 DIODE GP 250 DIODE M63813FP M63813GP M63813KP M63813P PDF

    QCA50A

    Abstract: QCA50A40 QCA50A60 QCA50B QCA50B40 QCA50B60
    Contextual Info: TRANSISTOR MODULE QCA50B/QCB50A40/60 UL;E76102 M QCA50B and QCB50A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. IC 50A, VCEX 400/600V


    Original     		QCA50B/QCB50A40/60 E76102 QCA50B QCB50A 400/600V QCA50B40 QCA50B60 QCA50A40 QCA50A60 QCA50B40 QCA50A QCA50A60 QCA50B60 PDF

    QCA200AA120

    Contextual Info: TRANSISTOR MODULE QCA200AA120 UL;E76102 （M） QCA200AA120 is a dual Darlington power transistor module with has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from


    Original     		QCA200AA120 E76102 QCA200AA120 113max Tab110 31max. 90max. 200sec100msec PDF

    QCA50AA100

    Contextual Info: TRANSISTOR MODULE QCA50AA100 UL;E76102 （M） QCA50AA100 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from


    Original     		QCA50AA100 E76102 QCA50AA100 VCEX1000V IC50A, 30max. AMP110TAB IB11A VCC600V PDF

    QCA75AA100

    Abstract: e28b2
    Contextual Info: TRANSISTOR MODULE QCA75AA100 UL;E76102 （M） QCA75AA100 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from


    Original     		QCA75AA100 E76102 QCA75AA100 110TAB 37max. 30max. 100msec50sec 1ms100ms e28b2 PDF

    QCA75AA120

    Contextual Info: TRANSISTOR MODULE QCA75AA120 UL;E76102 （M） QCA75AA120 is a dual Darlington power transistor module which has series- connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from


    Original     		QCA75AA120 E76102 QCA75AA120 110TAB 37max. 30max. MAX31 VCEX1200V PDF

    QCA150BA60

    Contextual Info: TRANSISTOR MODULE（Hi-β） QCA150BA60 UL;E76102 （M） QCA150BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is


    Original     		QCA150BA60 E76102 QCA150BA60 trr200ns) 95max 110Tab 50msec50sec 100sec50msec PDF

    QCA75BA60

    Contextual Info: TRANSISTOR MODULE（Hi-β） QCA75BA60 UL;E76102 （M） QCA75BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr：200ns . The mounting base of the module is


    Original     		QCA75BA60 E76102 QCA75BA60 trr200ns) 31max 110TAB VCEX600V hFE750 50msec50sec 100msec50sec PDF

    BJE 80 diode

    Abstract: DIODE BJE 80 pnp DARLINGTON TRANSISTOR ARRAY M63830FP M63830P 105 35K 102 DIODE BJE
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY M63830P/FP MIN RELI on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 4-UNIT 1.5A DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION The M63830P/FP 4-channel sinkdriver, consists of 4 PNP


    Original     		M63830P/FP M63830P/FP IN140 BJE 80 diode DIODE BJE 80 pnp DARLINGTON TRANSISTOR ARRAY M63830FP M63830P 105 35K 102 DIODE BJE PDF

    BJE 80 diode

    Abstract: DIODE BJE pnp darlington array 20P2N-A M63836FP M63836KP 8-channel darlington array 8-channel PNP darlington array DIODE BJE 80 20P2N
    Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> ARY M63836FP/KP MIN RELI on. ange. ificati h l spec ct to c a finaare subje t o n is its is m h li T e: tric Notice parame Som P 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION The M63836FP/KP 8-channel sinkdriver, consists of 8 PNP


    Original     		M63836FP/KP 500mA M63836FP/KP 500mA) BJE 80 diode DIODE BJE pnp darlington array 20P2N-A M63836FP M63836KP 8-channel darlington array 8-channel PNP darlington array DIODE BJE 80 20P2N PDF

    BUK437-600B

    Abstract: BUK437-600A BUK437 TNT sot
    Contextual Info: BUK437-600A BUK437-600B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode liekJ-eftect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUK437-600A BUK437-600B BUK437 -600A -600B 00/nC M89-114imST BUK437-600B BUK437-600A TNT sot PDF

    KD621230

    Abstract: D1220 300 volt 5 ampere transistor a 31 diode oas transistors d100
    Contextual Info: m V E R E X KD621230 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 300 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


    OCR Scan     		KD621230 Amperes/1200 D-100 KD621230 D1220 300 volt 5 ampere transistor a 31 diode oas transistors d100 PDF

    102 TRANSISTOR

    Abstract: Z2E diode KD224503 K0224503
    Contextual Info: K M B S r KD224503 Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 30 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


    OCR Scan     		KD224503 Amperes/600 102 TRANSISTOR Z2E diode KD224503 K0224503 PDF

    NEC 2501

    Abstract: TC-2178 resistor UJ marking
    Contextual Info: DATAEvaluation SHEET AdLib OCR IVEC ELECTRON DEVICE SILICON TRANSISTOR- GN1F4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 0 Resistor Built-in TYPE 2.1+0 .1 Maximum Voltages and Cur ents T, 25 OC


    Original     		TC-2178 1988M NEC 2501 TC-2178 resistor UJ marking PDF

    s34 diode

    Abstract: KS221K15 switch AU 101 transistor s34 S-34 transistor S33 s34 recovery diode ks22 powerex ks22
    Contextual Info: ?<WEREX KS221K15 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S ilic ic D â r H t lQ tO n Transistor Module 150 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


    OCR Scan     		KS221K15 Amperes/1000 s34 diode KS221K15 switch AU 101 transistor s34 S-34 transistor S33 s34 recovery diode ks22 powerex ks22 PDF

    sot 23 marking code 2t

    Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
    Contextual Info: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is


    OCR Scan     		OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT-A43 sot 23 marking code 2t marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR PDF