TRANSISTOR M21 Search Results

Contextual Info: Data Sheet µPA2815T1S P-channel MOS FIELD EFFECT TRANSISTOR R07DS0777EJ0100 Rev.1.00 Jun 01, 2012 Description The µPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features

p-channel m21

Contextual Info: Data Sheet PA2815T1S P-channel MOS FIELD EFFECT TRANSISTOR R07DS0777EJ0100 Rev.1.00 Jun 01, 2012 Description The μPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

6di15s-050

Abstract: 6DI20MS-050 6DI15MS050 6di15s M114 M117 1DI300MN-050 6di15s-05 1DI300ZP-120 6DI15S050
Contextual Info: BIPOLAR TRANSISTOR MODULES Ratings and Specifications 3 High-speed switching 1400 volts class power transistor modules • Suited fo r m otor control applications w ith 575V AC input. • Power transistors and free wheels are built into one package. • Wide SOA w ith high-speed sw itching _

6DI75MA-050

Abstract: 2DI100MA-050 1di50 1di200 6DI30MA-050 TRANSISTOR N 1380 600 300 SC 2di150ma-050
Contextual Info: /\°7 —7"VW 7 / Power Devices k • A 7 ~ h 7 > y X ^ i v i t — V Power Transistor Modules 600V'7^X ¡ lh F E / \ V - l'7 > v ; ^ iv . a - J l' 600 volts class high hFE power transistor modules m a Devi«» type VCBQ VCEQ Ic Cont, Amps. Pc hnsowisfc).

2DI75M-120

Abstract: 1di200
Contextual Info: ^ g jjjf /\°7 — x / W 7s / Power Devices • / v'9 —h 7 > y X ^ i y . i “ ^ Power Transistor Modules 1 2 0 0 V ? 7 * S h F E / '* 7 - h 7 > '> '^ 5 f ;E ' > ' a - ^ 1200 volts class high hFE power transistor modules m £ V cbo Device type 2DI50M-120

Contextual Info: BIPOLAR TRANSISTOR MODULES ' Ratings and Specifications jjfi 600 volts class high F ife — power transistor modules • Because this m o d u le has 10 tim e s or m o re th e con vention al DC cu rren t gain, set p ro p o rtio n a lly fo r each ele m en t

2C2907AHV

Abstract: m21 transistor
Contextual Info: MOTOROW Order this dooument by 2C2W7AHVID SEMICONDUCTORTECHNICALDATA @ 2C2907AHV Chip PNP Silicon Smal14ignal Transistor .11 ~+ “~ [ . . designed for dc to VHF amplifier and generaburpose witching applications. Technaloglw Opl muon MMIMUM RATINGS Value symbol

Contextual Info: Ordering number: EN 1627B _2SC3643 N PN Triple D iffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features . High reliability Adoption of HVP process . Fast speed. . High breakdown voltage.

2N3634 MOTOROLA

Abstract: m21 transistor 2N3634 2N3637 transistor m21 MIL-19500 2N3634JTX 2N3635 2N3635JTX 2N3636
Contextual Info: MOTOROU Orderth18 document by2N3WWD SEMICONDUCTOR TECHNICAL DATA o 2N3634JTX, 2N3635JTX, 2N3636JTX, 2N3637JTX, JTXV JTXV, JANS JTXV, JANS JTXV, JANS Processed per MIL+-19500/357 PNP Silicon SmallSignal o General-Purpose Transistor Ic Collector Current,Maimurn

M615

Abstract: 1DI300ZP-120 1DI400MP-120 1di200
Contextual Info: BIPOLAR TRANSISTOR MODULES Ratings and Specifications 3 High-speed sw itching 1400 volts class pow er transistor modules • S u ite d f o r m o t o r c o n t ro l a p p li c a t io n s w i t h 575V AC in p u t. • P o w e r t r a n s i s to r s an d fre e w h e e ls are b u ilt in to on e package.

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

Contextual Info: Data Sheet PA2815T1S P-channel MOSFET R07DS0777EJ0101 Rev.1.01 May 28, 2013 –30 V, –21 A, 11 mΩ Description The μPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

2N5262

Abstract: ssc sl 136 4 TA-7238 ia86 TRANSISTOR 2n5262 2n5262 rca CE010 TA2626 I3B9 RCA-2N5262
Contextual Info: .File No. 313 Pow er T ra n sisto rs Solid State Division 2N5262 RCA-2N5262* is a silicon n-p-n, epitaxial planar transistor with characteristics which make it excep­ tionally desirable for high-speed, high-voltage, highcurrent switching applications. In addition, the 2N5262

T-CON Schematic

Abstract: 2DI150M-120 FAJWA 150A 3D M210 T151 B401 OWTR t460 transistor PC2000
Contextual Info: 2 D I1 50M -120 150 a /v ° 7 - h '• Outline Drawings POWER TRANSISTOR MODULE • 4 # ^ : : Features • • • • fca#&iiiiA'i'iSj^ High Arm Short Circuit Capability hFE/^iftu High DC Current Gain 7 *)~ — KF3 Including Freewheeling Diode ifeiHffi Insulated Type

KE724503

Abstract: 748 transistor on LC20A KE7245
Contextual Info: 31E D POWEREX INC m M B Œ • TS^MbEl OOOMMlfl-T M P R X KE7245Ó3 X Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Six-Darlington Transistor Module

transistor C4

Abstract: BFR740L3RH Digital Oscilloscope Preamplifier BFP620 spice BFP620 applications note Miteq SMC-02 LQP10A MTA-100 transistor cross ref Isolation amplifier
Contextual Info: Application Note, Rev. 1.0, January 2009 Application Note No. 173 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 2.4 – 2.5 GHz LNA Application with 18 dB Gain, 0.7 dB Noise Figure & < 1 microsecond Turn-On / Turn-Off Time For 802.11b/g & 802.11n “MIMO” Wireless LAN Applications;

transistor j380

Abstract: J225 J22 transistor 200B AWG20 M210 MS3022 J380
Contextual Info: MS3022 1 Watts, 28 Volts Class-C, CW 1.0 to 2.0 GHz GENERAL DESCRIPTION The MS3022 is a common base silicon NPN transistor designed for Class-C general purpose microwave applications. The device is capable of withstanding an infinite load VSWR under rated conditions. The MS3022 is particularly suited for

Contextual Info: MS3022 1 Watts, 28 Volts Class-C, CW 1.0 to 2.0 GHz GENERAL DESCRIPTION The MS3022 is a common base silicon NPN transistor designed for Class-C general purpose microwave applications. The device is capable of withstanding an infinite load VSWR under rated conditions. The MS3022 is particularly suited for

2N2156

Abstract: 2N2152 2N2153 2N2154 2N215 2N2157 2N2158 Germanium power
Contextual Info: 2N21 52. THRU 2N2154 2N2156 THRU 2N2Ì58 '«frifcI Ä »% §&#*•##%151%gf#i i%» »% |#-r ♦I ¡rf Central Sem iconductor Corp. Central semiconductor Corp. GERMANIUM PNP POWER TRANSISTOR 170 WATTS 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 JEDEC TO-36 CASE

2DI150M-120

Contextual Info: 2 D I1 50M -120 150 a /v ° 7 - h '• Outline Drawings POWER TRANSISTOR MODULE • 4 # ^ : : Features • • • • fca#&iiiiA'i'iS j^ High Arm Short Circuit Capability h F E /^iftu High DC Current Gain 7 *)~ — KF3 Including F reew heeling Diode ifeiHffi Insulated Type

M106 TRANSISTOR

Abstract: 1di200z-120 1di200
Contextual Info: /\°7 — x / W 7s / Power Devices z v u - x - io o o Z series high-speed switching 1000 volts class power transistor modules m a Device type Vme> VCEX Ic Cont Amps. Pc tlFE Min : . Vce Amps. Volts >C te M r t ' t W k SwitchingImveiMax.). I ' i - j ' T - y

Contextual Info: D 2 I ,< rj — 1 M ^ - 1 2 i o o a 3.—JU W ïfé T l'ïi : Outline Drawings POWER TRANSISTOR MODULE • 9U S : Features • JSSSRS^iSSl.' High Arm Short Circuit Capability • hFEfr'Sv.' High DC Current Gain • 7 'J —f r 'f'J > $ ¥ 4 % —KrtSR Including Freewheeling Diode