TRANSISTOR LWW 40 Search Results

TRANSISTOR LWW 20

Abstract: onsemi SOT-223 BSP52T1 BSP62T1 SMD310 transistor code AS3
Contextual Info: BSP52T1 Preferred Device NPN Small-Signal Darlington Transistor This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is

TRANSISTOR LWW 20

Abstract: TRANSISTOR LWW 17 TRANSISTOR LWW 21 AN569 MMFT3055V MMFT3055VT1 MMFT3055VT3
Contextual Info: MMFT3055V Power MOSFET 1 Amp, 60 Volts N–Channel SOT–223 These Power MOSFETs are designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits

MMFT3055VLT1

Abstract: TRANSISTOR LWW 21 TRANSISTOR LWW 17 MMFT3055VLT3 TRANSISTOR LWW 20 MMFT3055VL AN569
Contextual Info: MMFT3055VL Power MOSFET 1 Amp, 60 Volts N–Channel SOT–223 These Power MOSFETs are designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits

5P03H

Abstract: TRANSISTOR LWW 24 TRANSISTOR LWW 43 TRANSISTOR LWW 17 Power MOSFET SOT-223 TRANSISTOR LWW 20 AN569 MMFT5P03HD MMFT5P03HDT3 TRANSISTOR LWW 31
Contextual Info: MMFT5P03HD Preferred Device Power MOSFET 5 Amps, 30 Volts P–Channel SOT–223 This miniature surface mount MOSFET features ultra low RDS on and true logic level performance. It is capable of withstanding high energy in the avalanche and commutation modes and the

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816ADC PRELIMINARY 16Mbit 2M X 8 BIT CMOS NAND EEPROM Description The TC5816 is a 5 volt 16M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as

TRANSISTOR LWW 20

Abstract: TRANSISTOR LWW 17
Contextual Info: MMDF3N02HD Preferred Device Power MOSFET 3 Amps, 20 Volts N−Channel SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the

E3P102

Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.