TRANSISTOR LRW Search Results

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: MITSUBISHI HVIGBT MODULES CM400DY-66H f spectt'c^ <S'chat'9e' . „.-YWS'S lrWflftS“ sorn HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-66H • Ic . • VCES .

Contextual Info: TOSHIBA TD6347S TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD6347S CONVENTIONAL TIMER The TD6347S is an automotive l2L monolithic timer. It is a long-term timer superior in voltage and temperature characteristics. It produces an NPN transistor opencollector output.

PCR 406 J transistor

Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553
Contextual Info: MIL-s-19500/341B 2! M,KII 196S SUPERSEDING ML-s -19 W0/341A 2 November 1966 See 6.3. MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES 2N3315, TX2N337S, 2N3553, TX2N3553, 2144440 AND TX2N4440 POWER ‘his smclficctim

N-1030

Abstract: Zener Diode B
Contextual Info: 1DI400MN-050 400A : Outline Drawings POWER TRANSISTOR MODULE : Features • hFE*f# i ' High DC Current Gain : Applications • i/LSK >*< — $ General Purpose Inverter • Uninterruptible Power Supply • N Mountingtorque*?9-4BkQ-0ffl Servo & Spindle Drive for NC Machine Tools

Contextual Info: Product Description Sirenza Microdevices’ SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final stage for 802.11b/g and 801.16

ITT DIODE W7

Abstract: diode t25 4 i9
Contextual Info: 1 D I 2 O O E - O 5 5 20Q a /< r7 - h ;7 '• O u tlin e D r a w in g s KO POWER TRANSISTOR MODULE tt.O _ . M jO . "'1 „ , ÎJ.0 ! <8, : Features • ¡SW/± -«ti - in High Voltage • y'J— 'J K r tlE • A S O M S i' •mmte -Bit m É è gQ •*23 cm

Contextual Info: micro electro nics group Data Sheet May 1996 Lucent Technologies Bell Labs Innovations ALA210 UHF Semicustom Linear Array Features Description • High-speed CBIC process: 4.5 GHz NPN, 3.75 GHz PNP The ALA210 UHF Semicustom Linear Arrays is an integrated circuit consisting of vertical NPN and PNP

TRANSISTOR ifw

Abstract: r-102 BA3304 BA5204F Q102 Q105 Q117 R106 transistor q117 rnf38
Contextual Info: Audio ICs 3V/35mW dual power amplifier BA5204F The BA5204F is a dual-channel power am plifier designed tor 3V stereo headphone tape players. There is alm ost no “ p o p ” sound generated when the power is switched on and off, so this 1C is ideal for headphone applications. Input

Contextual Info: TOSHIBA T EN T A T IV E TC58V16BDC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-M BIT 2M x 8 BITS CMOS N A N D E2PROM DESCRIPTION The TC58V16 is a single 3.3-V 16-Mbit NAND electrically erasable and programmable read-only memory (NAND E2PROM) with a spare 64K X 8 bits. The device is organized as 264 bytes X 16 pages

mdd 2605

Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
Contextual Info: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900

Z80A

Abstract: Z80A CPU z80a-cpu 4Kx8 Dual-Port Static RAM sense amplifier bitline memory device datasheet and application 7217 IDT7027 AN-45 IDT7052 IDT7054
Contextual Info: INTRODUCTION TO IDT's FourPort SRAM APPLICATION NOTE AN-45 Integrated Device Technology, Inc. By John R. Mick INTRODUCTION Integrated Device Technology is continuing to pioneer higher speed and higher density static RAMs. As IDT has improved its CMOS technology, new SRAM architectures and

4Kx8 Dual-Port Static RAM

Abstract: Z80A Z80A CPU z80a-cpu 128 byte dual port memory sense amplifier bitline memory device 16 bit processor schematic datasheet and application 7217 DSP CPU non-recursive filter decoder AN-45
Contextual Info: INTRODUCTION TO IDT's FourPort SRAM APPLICATION NOTE AN-45 By John R. Mick Introduction system performance and reduce parts count by providing simultaneous access to the data by more than one processor at a time. Integrated Device Technology is continuing to pioneer higher speed

Z80A

Abstract: Z80A-CPU Z80A CPU 16 bit processor schematic 2kx8 EPROM SRAM 6116 4Kx8 Dual-Port Static RAM datasheet and application 7217 MICROPROCESSOR 68000 AN-45
Contextual Info: INTRODUCTION TO IDT's FourPort SRAM APPLICATION NOTE AN-45 By John R. Mick Introduction system performance and reduce parts count by providing simultaneous access to the data by more than one processor at a time. Integrated Device Technology is continuing to pioneer higher speed

UR3040PT

Abstract: 15a42 1560c transistor lrw
Contextual Info: MUR3040PT, RURH1540CC, MUR3050PT, RURH1550CC, MUR3060PT, RURH1560CC H A R R IS S E M I C O N D U C T O R 15A, 400V - 600V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 55ns JEDEC TO-218AC • +175°C Rated Junction Temperature

Contextual Info: m w RURP1570, RURP1580, RURP1590, RURP15100 h a r r is . . . . e . . . u e T. , 15A, 700V - 1000V Ultrafast Diodes April 1995 Package Features JEDEC TO-220AC • Ultrafast with Soft Recovery Characteristic Or r < 100ns ANODE • +175°C Rated Junction Temperature

motorola 1N4148

Abstract: zener diode c27 ph MC33262 C18 ph zener 1n4148 motorola ph c24 zener diode MC33262 datasheet 1N4148 pspice 47nf 630v pulse capacitor electronic ballast for 36 watt fluorescent tube l
Contextual Info: MOTOROLA Order this document by AN1682/D SEMICONDUCTOR APPLICATION NOTE AN1682 Using the MC33157 Electronic Ballast Controller Prepared by: Michael Bairanzade System Engineering Motorola — Toulouse 1 — BASIC HALF BRIDGE ELECTRONIC BALLAST Most of the European low pressure fluorescent lamps are

Contextual Info: O K I semiconductor MSM514402A/AL_ 1,048,576-Word x 4-Bit DYNAMIC RAM: STATIC COLUMN MODE TYPE GENERAL DESCRIPTION The MSM514402A/AL is a new generation dynamic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the MSM514402A/AL is O KI's CMOS silicon gate

20-PIN

Abstract: 26-PIN ZIP20-P-400
Contextual Info: O K I Semiconductor M SM 514400B/BL 1 ,0 4 8 , 576-Word x 4 - B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514400B/BL is a new generation dynam ic RAM organized as 1,048,576-word x 4-bit. The technology u sed to fabricate the M SM 514400B/BL is O K I's C M O S silicon gate process technology.

amd c-50

Abstract: atmel h 208 TTL 74xx
Contextual Info: ATL Features • 1.0 n Drawn Gate Length High-performance CMOS Gate Arrays • All ATL Gate Arrays are Specified from 3.0 Volts to 5.5 Volts, for Standard and Low Voltage Applications • Design Translation of Existing ASIC Designs Provide for Easy Alternate Sourcing with Equivalent or Improved Performance

b8118

Abstract: MCM4517
Contextual Info: FU JITSU M IC R O E L E C T R O N IC S . INC. MB81I8-10 MB8U8-12 AJ & g / / £ NMOS 16,384-BIT DYNAMIC RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MB8118 is a fully de­ coded dynamic NMOS random ac­ cess memory organized as 16,384 one-bit words. The design is op­

Contextual Info: For Communications Equipment MN86072 Image Processing LSI Overview The MN86072 enhances image quality by applying various imaging processing techniques to the analog signal from an image sensor. It reproduces halftone images with 64-gradation using two-dimensional MTF