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R106
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Hamamatsu
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PHOTOMULTIPLIER TUBE |
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R10-6L
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3M Electronics
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Over 600 obsolete distributor catalogs now available on the Datasheet Archive - TERMINAL, NON-INSULATED, RING TONGUE, 12-10AWG, STUD 6, 50/PKG |
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MUR1060CT
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JCET Group
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Super fast recovery rectifier diode MUR1060CT with 600 V peak repetitive reverse voltage, 10 A average rectified output current, 35 ns reverse recovery time, and 1.3 V typical forward voltage at 125 °C. |
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FR106
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AK Semiconductor
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Fast Recovery Silicon Rectifier in DO-41 package, 1 A average forward rectified current, repetitive peak reverse voltage from 100 to 1000 V, lead-free, suitable for surface mounting. |
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FR106L
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Shenzhen Heketai Electronics Co Ltd
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Fast Recovery Diodes FR101L-FR107L in SOD-123FL package feature repetitive peak reverse voltage from 50V to 1000V, low forward voltage of 1.3V at 1.0A, reverse recovery time of 250ns, and are suitable for surface mounted applications with junction temperature up to 150°C.Fast recovery diode in SOD-123FL package with repetitive peak reverse voltage from 50V to 1000V, low forward voltage of 1.3V at 1.0A, reverse leakage current of 5μA at 25°C, and reverse recovery time of 250ns. |
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FR106
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SUNMATE electronic Co., LTD
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Fast recovery rectifier diodes FR101-FR107 with 50 to 1000V reverse voltage, 1.0A average forward current, 30A surge current, low forward voltage drop of 1.30V, and operating temperature from -65 to +150°C in DO-41 package. |
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ER106
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SUNMATE electronic Co., LTD
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ER100-ER108 series surface mount fast recovery rectifiers in DO-41 package, with peak reverse voltage from 50 to 800V, average forward current 1.0A, low forward voltage, and high surge capability. |
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FR106W
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Shandong Jingdao Microelectronics Co Ltd
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Surface mount fast recovery rectifier with 1 A average forward current, 50 to 1000 V maximum DC blocking voltage, low profile SOD-123FL package, and fast reverse recovery time. |
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MUR1060NS
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Microdiode Semiconductor (MDD)
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VRRM 600V, I(AV) 10.0A, IFSM 120A, CJ 85pF, Trr 35ns, RθJA 50°C/W, -55 to +150°C, high frequency, surge current, mechanical strength, moisture resistance. |
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MBR1060DS
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AK Semiconductor
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Surface Mount Schottky Barrier Rectifier in TO-252(D-PAK) package, with reverse voltage ratings from 40V to 200V, forward current up to 10A, low forward voltage drop, and high surge current capability of 150A.Surface Mount Schottky Barrier Rectifier in TO-252(D-PAK) package, with reverse voltage ratings from 40V to 200V, forward current up to 10A, low forward voltage drop, and high surge current capability of 150A. |
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FR106WS
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AK Semiconductor
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Surface Mount Fast Recovery Rectifiers in SOD-323FL package with reverse voltage ratings from 50 to 1000 V, 1 A forward current, low forward voltage drop, and lead-free design compliant with EU RoHS directives. |
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MUR1060C
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CREATEK Microelectronics
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Fast recovery epitaxial diode in TO-220ACW package with 600 V peak repetitive reverse voltage, 10 A average forward rectified current, 1.6 V forward voltage at 10 A, and 35 ns reverse recovery time. |
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MBR1060VL
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode with 20 to 100V peak repetitive reverse voltage, 1.0A forward current, 450mW power dissipation, and operating temperature from -65 to +125°C. |
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FR106G
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Microdiode Semiconductor (MDD)
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MBR1060CG
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AK Semiconductor
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Surface mount Schottky barrier rectifier in TO-263 package with reverse voltage ratings from 40V to 200V, forward current up to 10A, low forward voltage drop, and high surge current capability of 100A. |
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SR1060
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AK Semiconductor
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Schottky Barrier Rectifier with reverse voltage ratings from 20 to 200 V, forward current up to 10 A, low forward voltage drop, high surge current capability of 200 A, and operating junction temperature range from -55 to +150 °C.Schottky Barrier Rectifier in DO-27 package with reverse voltage ratings from 20 to 200 V, forward current up to 10 A, low forward voltage drop, and high surge current capability of 200 A at 8.3 ms. |
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FR106
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Microdiode Semiconductor (MDD)
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Rectifier Diode, 1 Phase, 1 Element, 1A, 800V V(RRM), Silicon, DO-41 |
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MBR1060DT
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Shandong Jingdao Microelectronics Co Ltd
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Schottky barrier rectifier with reverse voltage range of 40 to 200 V, forward current rating of 10 A, low forward voltage drop, high surge capability, and operating junction temperature up to 175 °C.Schottky barrier rectifier with reverse voltage ratings from 40 to 200 V, forward current up to 10 A, low forward voltage drop, high surge capability, and operating junction temperature range from -55 to +175 °C. |
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SR106
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SUNMATE electronic Co., LTD
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Schottky Barrier Rectifier Diode in DO-41 package, 20-90V reverse voltage range, 1.0A average rectified current, 40A peak surge current, low forward voltage drop, suitable for high frequency inverters and transient protection applications. |
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HER106
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SUNMATE electronic Co., LTD
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HER101-HER108 high efficiency rectifier diodes in DO-41 package, 50-1000V peak reverse voltage, 1.0A average forward current, low forward voltage drop, high surge current capability, fast recovery time 50-75ns, operating junction temperature -65 to +150°C. |
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MUR1060CT
