R106 Search Results
R106 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| XPH2R106NC |
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N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) | Datasheet | ||
| XTR106U |
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4-20mA Current Transmitter with Bridge Excitation And Linearization 14-SOIC -40 to 85 |
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| DS99R106SQ/NOPB |
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3-40MHz DC- Balanced 24-Bit LVDS Deserializer 48-WQFN 0 to 70 |
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| XTR106UA/2K5 |
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4-20mA Current Transmitter with Bridge Excitation And Linearization 14-SOIC -40 to 85 |
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| XTR106UA |
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4-20mA Current Transmitter with Bridge Excitation And Linearization 14-SOIC -40 to 85 |
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R106 Datasheets (26)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| R106 | Hamamatsu | PHOTOMULTIPLIER TUBE | Original | 36.79KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R10-6L | 3M Electronics | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - TERMINAL, NON-INSULATED, RING TONGUE, 12-10AWG, STUD 6, 50/PKG | Scan | 88.87KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MUR1060CT
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JCET Group | Super fast recovery rectifier diode MUR1060CT with 600 V peak repetitive reverse voltage, 10 A average rectified output current, 35 ns reverse recovery time, and 1.3 V typical forward voltage at 125 °C. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FR106L
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Shenzhen Heketai Electronics Co Ltd | Fast Recovery Diodes FR101L-FR107L in SOD-123FL package feature repetitive peak reverse voltage from 50V to 1000V, low forward voltage of 1.3V at 1.0A, reverse recovery time of 250ns, and are suitable for surface mounted applications with junction temperature up to 150°C.Fast recovery diode in SOD-123FL package with repetitive peak reverse voltage from 50V to 1000V, low forward voltage of 1.3V at 1.0A, reverse leakage current of 5μA at 25°C, and reverse recovery time of 250ns. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FR106
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SUNMATE electronic Co., LTD | Fast recovery rectifier diodes FR101-FR107 with 50 to 1000V reverse voltage, 1.0A average forward current, 30A surge current, low forward voltage drop of 1.30V, and operating temperature from -65 to +150°C in DO-41 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FR106
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AK Semiconductor | Fast Recovery Silicon Rectifier in DO-41 package, 1 A average forward rectified current, repetitive peak reverse voltage from 100 to 1000 V, lead-free, suitable for surface mounting. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ER106
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SUNMATE electronic Co., LTD | ER100-ER108 series surface mount fast recovery rectifiers in DO-41 package, with peak reverse voltage from 50 to 800V, average forward current 1.0A, low forward voltage, and high surge capability. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FR106WS
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AK Semiconductor | Surface Mount Fast Recovery Rectifiers in SOD-323FL package with reverse voltage ratings from 50 to 1000 V, 1 A forward current, low forward voltage drop, and lead-free design compliant with EU RoHS directives. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBR1060DS
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AK Semiconductor | Surface Mount Schottky Barrier Rectifier in TO-252(D-PAK) package, with reverse voltage ratings from 40V to 200V, forward current up to 10A, low forward voltage drop, and high surge current capability of 150A.Surface Mount Schottky Barrier Rectifier in TO-252(D-PAK) package, with reverse voltage ratings from 40V to 200V, forward current up to 10A, low forward voltage drop, and high surge current capability of 150A. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MUR1060NS
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Microdiode Semiconductor | VRRM 600V, I(AV) 10.0A, IFSM 120A, CJ 85pF, Trr 35ns, RθJA 50°C/W, -55 to +150°C, high frequency, surge current, mechanical strength, moisture resistance. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FR106W
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Shandong Jingdao Microelectronics Co Ltd | Surface mount fast recovery rectifier with 1 A average forward current, 50 to 1000 V maximum DC blocking voltage, low profile SOD-123FL package, and fast reverse recovery time. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HER106
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SUNMATE electronic Co., LTD | HER101-HER108 high efficiency rectifier diodes in DO-41 package, 50-1000V peak reverse voltage, 1.0A average forward current, low forward voltage drop, high surge current capability, fast recovery time 50-75ns, operating junction temperature -65 to +150°C. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBR1060DS
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Shandong Jingdao Microelectronics Co Ltd | Schottky barrier rectifier with 40 to 200 V reverse voltage, 10 A forward current, low forward voltage drop, high surge capability, and operating junction temperature up to 150 °C. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SR106
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SUNMATE electronic Co., LTD | Schottky Barrier Rectifier Diode in DO-41 package, 20-90V reverse voltage range, 1.0A average rectified current, 40A peak surge current, low forward voltage drop, suitable for high frequency inverters and transient protection applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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MBR1060DT
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Shandong Jingdao Microelectronics Co Ltd | Schottky barrier rectifier with reverse voltage range of 40 to 200 V, forward current rating of 10 A, low forward voltage drop, high surge capability, and operating junction temperature up to 175 °C.Schottky barrier rectifier with reverse voltage ratings from 40 to 200 V, forward current up to 10 A, low forward voltage drop, high surge capability, and operating junction temperature range from -55 to +175 °C. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HER106
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AK Semiconductor | High efficiency silicon rectifier in DO-41 package, surface mountable with 1A average forward current, reverse voltage ratings from 100 to 1000V, low profile design, lead-free, and suitable for automated placement. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBR1060DT
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AK Semiconductor | Surface mount Schottky barrier rectifier in TO-252(D-PAK) package with reverse voltage ratings from 40V to 200V, 10A average forward current, low forward voltage drop, and high surge current capability up to 100A.Surface Mount Schottky Barrier Rectifier in TO-252(D-PAK) package with reverse voltage ratings from 40V to 200V, 10A forward current, low forward voltage drop, and high surge capability. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FR106W
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AK Semiconductor | Surface mount fast recovery rectifiers in SOD-123FL package with reverse voltage ratings from 50 to 1000 V, 1 A average forward current, fast reverse recovery time, and low profile design suitable for surface mounted applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSR106WS
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CREATEK Microelectronics | Schottky Barrier Diode in SOD-323 package with 60 V DC reverse voltage, 1 A mean rectifying current, low forward voltage drop, and 250 mW power dissipation, suitable for low power consumption and SMPS applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HER106
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Microdiode Semiconductor | 50-1000V, 1.0A, high speed, low leakage, high surge, 250°C/10s, DO-41, 0.34g. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
R106 Price and Stock
YAGEO Corporation RC0402FR-106K19LRES 6.19K OHM 1% 1/16W 0402 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RC0402FR-106K19L | Tape & Reel | 40,000 | 20,000 |
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Buy Now | |||||
Taiwan Semiconductor FR106GDIODE GEN PURP 800V 1A DO204AL |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FR106G | Cut Tape | 9,436 | 1 |
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Buy Now | |||||
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FR106G | 10 Weeks | 5,000 |
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Buy Now | ||||||
Texas Instruments XTR106UAIC CURRENT TRANSMITTER 14SOIC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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XTR106UA | Tube | 8,133 | 1 |
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Buy Now | |||||
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XTR106UA | 1,000 | 1 |
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Buy Now | ||||||
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XTR106UA | 38,853 |
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Get Quote | |||||||
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XTR106UA | 35,353 |
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Buy Now | |||||||
Cal-Chip Electronics GMC10X7R106M10NTCAP0603 X7R 10UF 20% 10V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GMC10X7R106M10NT | Cut Tape | 7,017 | 1 |
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Buy Now | |||||
Cal-Chip Electronics GMC43X7R106M50NTCAP1812 X7R 10UF 20% 50V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GMC43X7R106M50NT | Cut Tape | 5,455 | 1 |
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Buy Now | |||||
R106 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 3–line filters for converters and power electronics 520/300 V, 50/60 Hz, 10.100 A, 50 °C Ordering code: B84143A*R106 Date: 2006–10–17 Version: 02 EPCOS AG 2006. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the |
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B84143A R106-02-7659 | |
DBS09-R106-XX-TS
Abstract: R106 abs plastic
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R106-09GT: R106-09CT: DBS09-R106-XX-TS DBS09-R106-XX-TS R106 abs plastic | |
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Contextual Info: PHOTOMULTIPLIER TUBE R10699 High QE Multialkali Photocathode 28 mm 1-1/8 Inch Diameter, 9-Stage, Side-On Type FEATURES ●High Sensitivity Quantum Efficiency at 600 nm . 20 % (Typ.) at 780 nm . 10 % (Typ.) |
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R10699 SE-171-41 TPMS1074E01 | |
B84143A0010R106
Abstract: R106
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B84143A R106-04-7659 B84143A0010R106 R106 | |
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Contextual Info: EMC filters 3-line filters for converters and power electronics Series/Type: B84143A*R106 Date: May 2014 EPCOS AG 2014. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited. |
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B84143A | |
Industrial Drives
Abstract: Embedded Drives 10-R106PPA020SB01-M934A-D2-14 vinco igbt 10-R106PPA020SB01-M934A
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10-R106PPA020SB01-M934A 90PIM Industrial Drives Embedded Drives 10-R106PPA020SB01-M934A-D2-14 vinco igbt 10-R106PPA020SB01-M934A | |
CR103
Abstract: CR106 CR601 CR107 CR302 CR305 CR306 CR101 CR104 CR105
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OCR Scan |
CR101 CR103 CR104 CR105 CR106 CR107 CR301 CR302 CR303 CR304 CR601 CR107 CR305 CR306 | |
Frequency Converters
Abstract: conveyor conveyor motor R106
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B84143A Frequency Converters conveyor conveyor motor R106 | |
DBS09-106-XX-TSContextual Info: 1 2 3 4 5 6 7 SPECIFICATIONS Material: Hood: Thumbscrew: Hood Plating: R106-09GT: R106-09CT: A 8 9 A ABS Plastic Metal Gray ABS Plastic Nickel Plated B B C C D D E E Series DBS09 9 Pos. back shell F Type 106 Type 106 RoHS compliant Rev. Description Date Approved |
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R106-09GT: R106-09CT: DBS09 DBS09-106-XX-TS DBS09-106-XX-TS | |
ACM0802C-RN-GBS-E
Abstract: schematic e8a xc6204b332mr ACM0802C-RN-GBS ACM0802C C2412 transistor HD64F2215RUTE24V KMBX-SMT-5S-S-30TR 5b2 diode C2412
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R86DNF 100nF 470pF R99DNF R85DNF R119DNF KMBX-SMT-5S-S-30TR M20-9990246 ACM0802C-RN-GBS-E schematic e8a xc6204b332mr ACM0802C-RN-GBS ACM0802C C2412 transistor HD64F2215RUTE24V KMBX-SMT-5S-S-30TR 5b2 diode C2412 | |
R106Contextual Info: Products & Technologies EMV-Filter August 2007 Kompakte 3-Leiter-Netzfilter für den Maschinenbau EPCOS stellt mit seiner neuen Reihe B84143A*R106 eine kompakte, leichte und kostengünstige Standardlösung vor, die speziell für die Anforderungen im Maschinenbau konzipiert ist. Die Filter sind ausgelegt für 520 V AC |
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B84143A R106 | |
qml-38535
Abstract: CDFP4-F16 GDFP2-F16 GDIP1-T16 10h576
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5962-R106-93. CDFP4-F16. 0EU86 qml-38535 CDFP4-F16 GDFP2-F16 GDIP1-T16 10h576 | |
c82 004
Abstract: AT91SAM9G20-EK R158 C103 R166 RR10 C114 C102 C115 C116
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AT91SAM9G20-EK c82 004 R158 C103 R166 RR10 C114 C102 C115 C116 | |
hvac work orderContextual Info: 3–line filters for converters and power electronics 520/300 V, 50/60 Hz, 10.100 A, 50 °C Ordering code: B84143A*R106 Date: 2006–12–14 Version: 03 EPCOS AG 2006. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the |
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B84143A R106-03-7659 hvac work order | |
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340nm
Abstract: E678-11A R106 R212 JEDEC B11-88
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650nm TPMSB0141EA B11-88 E678-11A RADIA11 S-164-40 TPMS1040E01 340nm E678-11A R106 R212 JEDEC B11-88 | |
5962-8768606TA
Abstract: LMU17GMB40 pwl 4700 II 5962-8768601ZX smd marking 12W 55GB
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OCR Scan |
5962-R106-94 962-R044-95 TD0470Ã 5962-8768606TA LMU17GMB40 pwl 4700 II 5962-8768601ZX smd marking 12W 55GB | |
5962-89932
Abstract: 5962r8993202vea DAC08ARC qml-38535 DAC08 DAC08A GDFP2-F16 GDIP1-T16 CQCC1-N20
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OCR Scan |
5962-R106-92 5962-89932 5962r8993202vea DAC08ARC qml-38535 DAC08 DAC08A GDFP2-F16 GDIP1-T16 CQCC1-N20 | |
DC25V
Abstract: C25V
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---------R10611VB1 300mV JIS300mV DC25V C25V | |
C124
Abstract: C106 C107 C121 C127 MN12 C101 C102 C103 C104
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DEC06 AT91SAM9XE-EK CAYCE1019 C124 C106 C107 C121 C127 MN12 C101 C102 C103 C104 | |
R119
Abstract: C123 C107 C121 C127 MN12 R105 C101 R46R47 C103
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DEC05 AT91SAM9260EK CAYCE883 R119 C123 C107 C121 C127 MN12 R105 C101 R46R47 C103 | |
55LBC172
Abstract: 55lbc174 DS96F172mj smd marking code 3Z 5962-9076502VEA 96F172 qml-38535 GDIP1-T16 DS96F174ME SNJ55LBC172W
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OCR Scan |
5962-R106-95. 0D470fl 55LBC172 55lbc174 DS96F172mj smd marking code 3Z 5962-9076502VEA 96F172 qml-38535 GDIP1-T16 DS96F174ME SNJ55LBC172W | |
4C3 diode
Abstract: 3536A HD64F2166 24-Aug-2004 4B2 schematic Transistor 5C5 R104 R107 R128 R132
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33MHz 25MHz M20-9990206 100nF 3DK2166 24-Aug-2004 D005392 4C3 diode 3536A HD64F2166 24-Aug-2004 4B2 schematic Transistor 5C5 R104 R107 R128 R132 | |
C25VContextual Info: Model 型號 : ROTARY POTENTIOMETER-R10611VB1 ► Download PDF file Features:(特點): Thanks to its structure eliminating openings,the dust-proofing capacity and flux resisitance have been improved.9.8mm outing size is ideal for high-density set design. |
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POTENTIOMETER---------R10611VB1 300mV JIS300mV C25V | |
R172
Abstract: rr50 C143 rr48 rr49 rr-18 R129 C184 C186 RR14
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ADEC101899EQ2 AT91SAM9M10G45-EK AT91SAM9M10G45-EK R172 rr50 C143 rr48 rr49 rr-18 R129 C184 C186 RR14 | |