TRANSISTOR LIC Search Results

TRANSISTOR LIC Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR LIC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
HAT1058C Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23 Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,	Original	notic50 SON3024-8 HAT1062G ADE-A08-003Q HAT1058C HAT2106G HAT1068C Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23	PDF
PUMF12 Abstract: MCE153 Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor Product data sheet 2002 Nov 07 NXP Semiconductors Product data sheet PNP general purpose transistor; NPN resistor-equipped transistor	Original	MBD128 PUMF12 OT363 OT323 SC-70) 613514/01/pp7 PUMF12 MCE153	PDF
PUMF11 Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 PUMF11 NPN resistor-equipped transistor; PNP general purpose transistor Product data sheet 2002 Apr 09 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; PNP general purpose transistor	Original	MBD128 PUMF11 OT363 OT323 SC-70) 613514/01/pp7 PUMF11	PDF
diode BB102 Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,	Original	ADE-A08-003G diode BB102 RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet	PDF
D1486 Abstract: 2SC4342 Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4342 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SC4342 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM	Original	2SC4342 2SC4342 O-126 D1486	PDF
D1485 Abstract: 2SA1720 Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM	Original	2SA1720 2SA1720 O-220 D1485	PDF
transistor sc 308 Abstract: DTA143EE SMD310 Contextual Info: DTA143EE Product Preview Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base	Original	DTA143EE DTA143EE 416/SC r14525 DTA143EE/D transistor sc 308 SMD310	PDF
DTC114TE Abstract: SMD310 motorola DTC114TE Contextual Info: MOTOROLA Order this document by DTC114TE/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a	Original	DTC114TE/D DTC114TE 416/SC DTC114TE/D* DTC114TE SMD310 motorola DTC114TE	PDF
transistor sc 308 Abstract: DTC114TE SMD310 Contextual Info: DTC114TE Product Preview Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base	Original	DTC114TE DTC114TE 416/SC r14525 DTC114TE/D transistor sc 308 SMD310	PDF
DTC114YE Abstract: SMD310 motorola DTC114YE Contextual Info: MOTOROLA Order this document by DTC114YE/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114YE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a	Original	DTC114YE/D DTC114YE 416/SC DTC114YE/D* DTC114YE SMD310 motorola DTC114YE	PDF
2SC3603 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise	OCR Scan	2SC3603 2SC3603	PDF
2SA1743 Abstract: C11531E Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is	Original	2SA1743 2SA1743 C11531E	PDF
IC-3479 Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1428A is NPN silicon epitaxial Darlington Power (in millimeters) Transistor Array that built in Surge Absorber 4 circuits	Original	PA1428A PA1428A PA1428AH IC-3479 IC-8359 uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH	PDF
2SD1581 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and low power loss. This transistor is	Original	2SD1581 2SD1581	PDF

PA1476 Abstract: transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134 Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1476 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1476 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed	Original	PA1476 PA1476 PA1476H transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134	PDF
2SA1742 Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE sat . This transistor is ideal	Original	2SA1742 2SA1742 O-220 O-220)	PDF
ic 8705 Abstract: IC-8705 nec 8705 IC-3482 PA1436AH IEI-1209 UPA1436AH pa1436 transistor array high speed IEI-1213 Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1436A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436A is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed	Original	PA1436A PA1436A PA1436AH ic 8705 IC-8705 nec 8705 IC-3482 PA1436AH IEI-1209 UPA1436AH pa1436 transistor array high speed IEI-1213	PDF
DTA114YE Abstract: SMD310 Contextual Info: MOTOROLA Order this document by DTA114YE/D SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic	Original	DTA114YE/D DTA114YE 416/SC DTA114YE/D* DTA114YE SMD310	PDF
2SA1741 Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1741 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1741 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is	Original	2SA1741 2SA1741	PDF
IC-3523 Abstract: IC-6342 MEI-1202 MF-1134 IEI-1213 power transistor array Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1458 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1458 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and	Original	PA1458 PA1458 PA1458H IC-3523 IC-6342 MEI-1202 MF-1134 IEI-1213 power transistor array	PDF
2SC4550 Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is	Original	2SC4550 2SC4550	PDF
NEC 2sc4552 Abstract: 2SC4552 Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is	Original	2SC4552 2SC4552 NEC 2sc4552	PDF
uPA1456H Abstract: IC-3521 PA1456 IC-6340 IEI-1213 MEI-1202 MF-1134 DARLINGTON TRANSISTOR ARRAY Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1456 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1456 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed	Original	PA1456 PA1456 PA1456H uPA1456H IC-3521 IC-6340 IEI-1213 MEI-1202 MF-1134 DARLINGTON TRANSISTOR ARRAY	PDF
88 diode Abstract: NUS2501W6T1 sot-363 Marking LG Contextual Info: NUS2501W6 Integrated NPN Digital Transistor with Switching Diode Array This new option of integrated devices is designed to replace a discrete solution of a single transistor with three switching diodes. BRT Bias Resistor Transistor contains a single transistor with a	Original	NUS2501W6 SC-88 NUS2501W6/D 88 diode NUS2501W6T1 sot-363 Marking LG	PDF

TRANSISTOR LIC Search Results

TRANSISTOR LIC Result Highlights (5)

TRANSISTOR LIC Datasheets Context Search

HAT1058C

PUMF12

PUMF11

diode BB102

D1486

D1485

transistor sc 308

DTC114TE

transistor sc 308

DTC114YE

2SC3603

2SA1743

IC-3479

2SD1581

PA1476

2SA1742

ic 8705

DTA114YE

2SA1741

IC-3523

2SC4550

NEC 2sc4552

uPA1456H

88 diode