TRANSISTOR KIN Search Results

Mitsubishi M54564

Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
Contextual Info: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide

tip122 tip127 audio board

Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Contextual Info: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents

transistor case To 106

Abstract: BUT11A Transistor morocco 1300
Contextual Info: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION

65E6380

Abstract: IPx65R380E6 IPA65R380E6 Infineon CoolMOS IPD65R380E6 TRANSISTOR SMD MARKING CODE diode smd E6 Diode SMD SJ 02 65E-6 ID32
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS E6 Power Transistor IPx65R380E6 Data Sheet Rev. 2.0, 2010-01-02 Final Industrial & Multimarket 650V CoolMOS™ E6 Power Transistor 1 IPD65R380E6, IPI65R380E6 IPB65R380E6, IPP65R380E6

monochrome diagram

Abstract: monochrome crt schematic BU407
Contextual Info: BU407 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR APPLICATIONS HORIZONTAL DEFLECTION FOR MONOCHROME TVs ■ DESCRIPTION The BU407 is a silicon Epitaxial Planar NPN transistor in Jedec TO-220 plastic package.

6r950c6

Abstract: 6r950c IPx60R950C6 infineon marking TO-252 PG-TO263 IPD60R950C6 IPP60R950C6 Diode SMD SJ 19 6R950
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6

PNP POWER TRANSISTOR SOT-32

Abstract: 2N5195 transistor 2N5195 industrial linear ic data book 2N5192
Contextual Info: 2N5195 MEDIUM POWER PNP SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The 2N5195 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package.

TRANSISTORS BJT bc548

Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Contextual Info: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002

mje13007a

Contextual Info: MJE13007A SILICON NPN SWITCHING TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The MJE13007A is silicon multiepitaxial mesa NPN power transistor mounted in Jedec TO-220

BUJ103AX

Abstract: BP317 BU1706AX
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended

BP317

Abstract: BU1706AX BUJ204AX
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended

4420 Transistor

Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

transistor NEC D 822 P

Abstract: NEC D 822 P transistor NEC D 587 2sc3355 transistor NEC B 617 nec a 634 transistor marking S00 TRANSISTOR b 772 p
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise PACKAGE DIMENSIONS in millimeters inches am plifier at VHF, UHF and CATV band.

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use

MJE210

Abstract: transistor case To 106 transistor C 834
Contextual Info: MJE210 SILICON PNP TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain aydio amplifier applications.

SO642

Abstract: SO692
Contextual Info: SO642 SMALL SIGNAL NPN TRANSISTOR • ■ ■ ■ Type Marking SO 642 N91 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER PNP COMPLEMENT IS SO692 2 3

Transistor morocco mje13007

Abstract: ST MJE13007 MJE13007 ST MJE13007 MJE-13007 mje13007 equivalent
Contextual Info: MJE13007  SILICON NPN SWITCHING TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS ■ SWITCHING REGULATORS ■ MOTOR CONTROL DESCRIPTION The MJE13007 is a silicon multiepitaxial mesa NPN power transistor mounted in Jedec TO-220

str 6707

Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.

BFX34

Contextual Info: BFX34 SILICON NPN TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon Epitaxial Planar NPN transistor in Jedec TO-39 metal case, intented for high current applications. Very low saturation voltage and high speed at

BSS44

Contextual Info: BSS44 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A.

SC06960

Contextual Info: 2STN5551 Surface mounting NPN transistor Features • ■ NPN transistor in SOT-223 surface mounting package 4 Low VCE sat behavior Application ■ 1 Linear amplifier 2 3 SOT-223 Description The device is an NPN transistor manufactured by epitaxial planar technology.

MLP832

Abstract: ZXTD4591AM832 ZXTD4591AM832TA ZXTD4591AM832TC marking 91a
Contextual Info: ZXTD4591AM832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 40V; RSAT = 195m ; C = 2.5A VCEO = -40V; RSAT = 350m ; C = -2A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,

BU406 SGS

Abstract: china tv schematic diagram BU406 transistor BU406
Contextual Info: BU406 SILICON NPN SWITCHING TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FOR MONOCHROME TV ■ 3 1 DESCRIPTION The BU406 is a silicon epitaxial planar NPN transistor in Jedec TO-220 plastic package.

MLP832

Abstract: ZXTDB2M832 ZXTDB2M832TA ZXTDB2M832TC
Contextual Info: ZXTDB2M832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 20V; RSAT = 47m ; C = 4.5A VCEO = -20V; RSAT = 64m ; C = -3.5A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,